APT60N60SCS

600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOL MOS Po we r Se miconduc tors Super Junction MOSFET (B) TO -24 7 D 3 PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 Package (S) D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT60N60B_SCS(G) 600 60 38 230 ±30 431 3.45 -55 to 150 260 50 11 2 3 UNIT Volts Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current 2 Volts Watts W/°C °C V/ns Amps mJ Repetitive Avalanche Energy 3 1950 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)DSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 4 MIN 600 TYP MAX UNIT Volts (VGS = 10V, ID = 44A) 0.045 25 250 ±100 2.1 3 3.9 Ohms μA nA Volts 4-2011 050-7239 Rev C Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 3mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 5 APT60N60B_SCS(G) Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 44A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 44A @ 25°C RG = 4.3Ω 6 MIN TYP MAX UNIT pF 7200 8500 290 150 34 50 30 20 100 10 675 520 1100 635 190 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 6 nC ns INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 44A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 44A, RG = 4.3Ω μJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 4 MIN TYP MAX UNIT Amps Volts ns μC 44 180 1.2 600 17 4 (Body Diode) (VGS = 0V, IS = - 44A) Reverse Recovery Time (IS = -44A, dl S/dt = 100A/μs) Reverse Recovery Charge (IS = -44A, dl S/dt = 100A/μs) Peak Diode Recovery dv/dt 7 /dt V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.29 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f 3 Starting Tj = +25°C, L = 33.23mH, RG = 25Ω, Peak IL = 11A 4 Pulse Test: Pulse width < 380μs, Duty Cycle < 2% 5 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. 7 We do not recommend using this CoolMOS™ product in topologies that have fee wheeling load current conducted in the body diode that is hard commutated. The current commutation is very "snappy", resulting in high di/dt at the completion of commutation, and the likelihood of severe over-voltage transients due to the resulting high dv/dt. Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.30 D = 0.9 ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 0.7 0.20 0.15 0.5 Note: 4-2011 P DM 0.10 0.3 t1 t2 050-7239 Rev C 0.05 0 0.1 0.05 10-5 10-4 SINGLE PULSE Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves 140 ID, DRAIN CURRENT (AMPERES) 120 100 80 60 40 20 0 6.5V APT60N60B_SCS(G) 15, 10 & 7V 6V 5.5V 5V 4.5V 0 5 10 15 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, LOW VOLTAGE OUTPUT CHARACTERISTICS 200 180 ID, DRAIN CURRENT (AMPERES) 160 140 120 100 80 60 40 20 TJ = -55°C TJ = +25°C TJ = +125°C VDS> ID(ON) x RDS(ON) MAX. 250 μSEC. PULSE TEST @