APTM20DHM08G

APTM20DHM08G Asymmetrical - bridge MOSFET Power Module VBUS Q1 CR3 G1 OUT2 S1 OUT1 CR2 Q4 VDSS = 200V RDSon = 8mΩ typ @ Tj = 25°C ID = 208A @ Tc = 25°C Applicatio n • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G4 0/VBUS S4 • • • OUT1 G1 S1 VBUS 0/VBUS Benefits • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant S4 G4 OUT2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20DHM08G – Rev 2 July, 2006 Tc = 25°C Max ratings 200 208 155 832 ±30 10 781 100 50 3000 Unit V A V mΩ W A APTM20DHM08G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Typ Tj = 25°C Tj = 125°C 8 3 VGS = 10V, ID = 104A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V Max 375 1500 10 5 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 208A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5 Ω Min Typ 14.4 4.66 0.29 280 106 134 32 64 88 116 1698 1858 1872 1972 Max Unit nF nC ns µJ µJ Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=200V IF = 200A IF = 400A IF = 200A IF = 200A VR = 133V di/dt = 400A/µs Tj = 25°C Tj = 125°C Tc = 75°C Min 200 Typ Max 250 600 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 200 1 1.4 0.9 60 110 400 1680 1.1 V Qrr Reverse Recovery Charge nC www.microsemi.com 2–6 APTM20DHM08G – Rev 2 July, 2006 trr Reverse Recovery Time ns APTM20DHM08G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.16 0.29 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 1200 ID, Drain Current (A) 1000 800 600 400 200 0 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 104A 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 250 200 150 100 50 0 1.1 1 VGS=10V VGS=20V 0.9 0.8 0 50 100 150 200 250 300 ID, Drain Current (A) 25 50 75 100 125 150 APTM20DHM08G – Rev 2 July, 2006 TC, Case Temperature (°C) www.microsemi.com 4–6 APTM20DHM08G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 104A 1000 limited by RDSon 100µs 100 1ms 10 Single pulse TJ=150°C TC=25°C 1 10ms 100ms 1 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=208A V DS=40V 12 TJ =25°C 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) APTM20DHM08G – Rev 2 July, 2006 VDS=100V 10000 Coss VDS=160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5–6 APTM20DHM08G Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 50 100 150 200 250 300 350 I D, Drain Current (A) VDS=133V RG=2.5Ω T J=125°C L=100µH Rise and Fall times vs Current 160 140 V DS=133V R G=2.5Ω T J=125°C L=100µH t d(off) tr and tf ( ns) 120 100 80 60 40 20 0 0 tf t d(on) tr 50 100 150 200 250 300 350 ID, Drain Current (A) Switching Energy vs Current 4 Switching Energy (mJ) 3 2 1 0 0 50 Eoff 1 100 150 200 250 300 350 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 350 300 Frequency (kHz) 250 200 150 100 50 0 25 50 75 100 125 150 175 200 I D, Drain Current (A) V DS=133V D=50% R G=2.5Ω T J=125°C T C=75°C ZVS ZCS VDS=133V RG=2.5Ω TJ=125°C L=100µH Switching Energy vs Gate Resistance 6 VDS=133V ID=208A TJ=125°C L=100µH Eoff Eon 5 4 3 2 Eon and Eoff ( mJ) Eoff Eon 0 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ =150°C 100 TJ =25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APTM20DHM08G – Rev 2 July, 2006 M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6