APTM20DHM16T3G

APTM20DHM16T3G Asymmetrical - Bridge MOSFET Power Module 13 14 Q1 CR3 VDSS = 200V RDSon = 16mΩ typ @ Tj = 25°C ID = 104A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant 18 22 19 7 23 8 Q4 CR2 4 3 29 15 30 31 32 16 R1 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 200 104 77 416 ±30 19 390 104 50 3000 Unit V A V mΩ W A mJ August, 2009 1–7 APTM20DHM16T3G – Rev 0 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM20DHM16T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 16 3 Max 250 1000 19 5 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID =104A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 104A RG = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 104A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 104A, RG = 5Ω Min Typ 7220 2330 146 140 53 67 32 64 88 116 849 929 936 986 µJ µJ ns nC Max Unit pF Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt =200A/µs Min 200 Typ Max 250 500 Unit V µA A August, 2009 2–7 APTM20DHM16T3G – Rev 0 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=200V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 100 1 1.4 0.9 60 110 200 840 V ns nC www.microsemi.com APTM20DHM16T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight MOSFET diode 4000 -40 -40 -40 2.5 Min Typ Max 0.32 0.55 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 10V 9V 8.5V 8V 7.5V 7V 6.5V 0 4 8 12 16 20 24 28 0 1 2 3 4 5 6 7 8 9 10 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to VGS=10V @ 52A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 120 100 80 60 40 20 0 RDS(on) Drain to Source ON Resistance 1.1 1 VGS=10V VGS=20V 0.9 0.8 0 25 50 75 100 125 150 ID, Drain Current (A) TC, Case Temperature (°C) www.microsemi.com 4–7 APTM20DHM16T3G – Rev 0 August, 2009 25 50 75 100 125 150 APTM20DHM16T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 52A 1000 limited by RDSon 100 100µs 10 1ms Single pulse TJ=150°C TC=25°C 1 10ms 100ms 1 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=104A VDS=40V 12 TJ=25°C 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 August, 2009 5–7 APTM20DHM16T3G – Rev 0 VDS=100V 10000 Ciss Coss VDS=160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com APTM20DHM16T3G Delay Times vs Current 120 100 td(on) and td(off) (ns) 80 60 40 20 0 0 25 50 75 100 125 150 175 ID, Drain Current (A) VDS=133V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 VDS=133V RG=5Ω TJ=125°C L=100µH td(off) tr and tf (ns) 120 100 80 60 40 20 0 0 tf td(on) tr 25 50 75 100 125 150 175 ID, Drain Current (A) Switching Energy vs Current 2 Switching Energy (mJ) 1.5 1 0.5 Eoff 0 0 25 50 75 100 125 150 175 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 250 Frequency (kHz) 200 150 100 50 0 25 38 50 63 75 88 100 ID, Drain Current (A) VDS=133V D=50% RG=5Ω TJ=125°C TC=75°C ZCS ZVS VDS=133V RG=5Ω TJ=125°C L=100µH Switching Energy vs Gate Resistance 3 VDS=133V ID=104A TJ=125°C L=100µH Eoff Eon Eon and Eoff (mJ) 2.5 2 1.5 1 0.5 0 Eoff Eon 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 August, 2009 6–7 APTM20DHM16T3G – Rev 0 VSD, Source to Drain Voltage (V) www.microsemi.com APTM20DHM16T3G Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (°C/W) 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 200 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 120 Trr vs. Current Rate of Charge 100 A TJ=125°C VR=133V 130 A 150 100 100 TJ=125°C TJ=25°C 80 50 A 50 60 0 0.0 0.5 1.0 1.5 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge TJ=125°C VR=133V 100 A 130 A 50 A 40 0 200 400 600 800 -diF/dt (A/µs) 1000 1200 QRR, Reverse Recovery Charge (µC) IRRM, Reverse Recovery Current (A) 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 50 40 30 20 10 0 0 IRRM vs. Current Rate of Charge TJ=125°C VR=133V 100 A 130 A 50 A 200 400 600 800 1000 1200 200 400 600 800 1000 1200 -diF/dt (A/µs) -diF/dt (A/µs) Capacitance vs. Reverse Voltage 3200 2800 C, Capacitance (pF) 2400 2000 1600 1200 800 400 0 1 10 100 1000 VR, Reverse Voltage (V) Max. Average Forward Current vs. Case Temp. 150 125 IF(AV) (A) 100 75 Duty Cycle = 0.5 TJ=150°C 25 0 25 50 75 100 125 150 Case Temperature (°C) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTM20DHM16T3G – Rev 0 August, 2009 50