N08L163WC1CT1

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC1C Advance Information 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC1C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08L163WC1C is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 512Kb x 16 SRAMs Features • Single Wide Power Supply Range 2.2 to 3.6 Volts • Very low standby current 2.0µA at 3.0V (Typical) • Very low operating current 1.5mA at 3.0V and 1µs(Typical) • Simple memory control Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.5V • Very fast output enable access time 25ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Ultra Low Power Sort Avaliable Product Family Part Number Package Type Operating Temperature Power Supply (Vcc) 2.2V - 3.6V Speed Standby Current Operating Current (ISB), (Icc), Typical Typical 2 µA 1.5 mA @ 1MHz N08L163WC1CT1 44-TSOP II Pb-Free -40oC to +85oC 55ns Pin Configuration A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A18 A17 A16 A15 A14 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PIN ONE 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 A8 A9 A10 A11 A12 A13 Pin Descriptions Pin Name A0-A18 WE CE OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected Stock No. 23394-B 01/05 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. N08L163WC1C TSOP - II 1 N08L163WC1C NanoAmp Solutions, Inc. Functional Block Diagram Address Inputs A0 - A3 Word Address Decode Logic Advance Information Address Inputs A4 - A18 Page Address Decode Logic 32K Page x 16 word x 16 bit RAM Array Input/ Output Mux and Buffers Word Mux I/O0 - I/O7 I/O8 - I/O15 CE WE OE UB LB Control Logic Functional Description CE H X L L L WE X X L H H OE X X X3 L H UB X H L1 L1 L1 LB X H L1 L1 L1 I/O0 - I/O151 High Z High Z Data In Data Out High Z MODE Standby2 Standby2 Write3 Read Active POWER Standby Standby Active Active Active 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 10 10 Unit pF pF 1. These parameters are verified in device characterization and are not 100% tested Stock No. 23394-B 01/05 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 2 N08L163WC1C NanoAmp Solutions, Inc. Absolute Maximum Ratings Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER Rating –0.3 to VCC+0.3 –0.3 to 4.5 500 –65 to 150 -40 to +85 260oC, 10sec Unit V V mW oC oC o Advance Information C Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Characteristics (Over Specified Temperature Range) Item Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 µs Cycle Time2 Read/Write Operating Supply Current @ fmax Maximum Standby Current Symbol VCC VDR VIH VIL VOH VOL ILI ILO ICC1 ICC2 Chip Disabled Vcc = 2.2V to 2.7V Vcc = 2.2V to 2.7V Vcc = 2.2V to 2.7V Vcc = 2.2V to 2.7V IOH = -0.1mA, Vcc = 2.2V IOH = -1.0mA, Vcc = 2.7V IOL = 0.1mA, Vcc = 2.2V IOL = 2.1mA, Vcc = 2.2V VIN = 0 to VCC OE = VIH or Chip Disabled VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 3.6 V Vcc = 1.5V, CE ≥ Vcc - 0.2V, VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V -L -L -1 -1 1.5 1.5 12.0 12.0 2.0 -L 2.0 Test Conditions Min. 2.2 1.5 1.8 2.2 –0.3 -0.3 2.0 2.4 0.4 0.4 1 1 3.0 3.0 20.0 15.0 20 8 10 -L 4 µA µA VCC+0.3 VCC+0.3 0.6 0.8 Typ1 3.0 Max 3.6 Unit V V V V V V µA µA mA mA ISB1 Maximum Data Retention Current IDR 1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. Stock No. 23394-B 01/05 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 3 N08L163WC1C NanoAmp Solutions, Inc. Timing Test Conditions Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature 0.1VCC to 0.9 VCC 1V/ns 0.5 VCC CL = 50pF -40 to +85 oC Advance Information Timing Item Read Cycle Time Address Access Time (Random Access) Chip Enable to Valid Output Output Enable to Valid Output Byte Select to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Byte Select to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Byte Select Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Byte Select to End of Write Write Pulse Width Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Note: 1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200us wait time after Vcc stablization. 2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) ≥ 100us or stable at Vcc(min) ≥ 100us. Symbol tRC tAA tCO tOE tLB, tUB tLZ tOLZ tLBZ, tUBZ tHZ tOHZ tLBHZ, tUBHZ tOH tWC tCW tAW tLBW, tUBW tWP tAS tWR tWHZ tDW tDH tOW 55 Min 55 55 55 25 55 10 5 10 20 20 20 10 55 40 40 40 40 0 0 20 25 0 10 Max Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Stock No. 23394-B 01/05 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 4 N08L163WC1C NanoAmp Solutions, Inc. Timing of Read Cycle (CE = OE = VIL, WE = VIH) tRC Address tAA, tOH Advance Information Data Out Previous Data Valid Data Valid Timing Waveform of Read Cycle (WE=VIH) tRC Address tAA, tHZ CE tLZ tOE OE tOLZ tLB, tUB LB, UB tLBLZ, tUBLZ Data Out High-Z tLBHZ, tUBHZ Data Valid tOHZ Stock No. 23394-B 01/05 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 5 N08L163WC1C NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control) tWC Address tAW CE tLBW, tUBW LB, UB tAS WE tDW High-Z Data In tWHZ Data Out High-Z tDH tWP tWR Advance Information Data Valid tOW Timing Waveform of Write Cycle (CE Control) tWC Address tAW CE tAS tLBW, tUBW LB, UB tWP WE tDW Data In tLZ Data Out tWHZ tDH tCW tWR Data Valid High-Z Stock No. 23394-B 01/05 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 6 N08L163WC1C NanoAmp Solutions, Inc. Data Retention Characteristics Parameter VDR ICCDR tCDR tR Description Vcc for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Vcc = 1.5V, CE ≥ Vcc - 0.2V, VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V -L 0 tRC Condition Min 1.5 10 4 Typ Max Unit V µA ns ns Advance Information Data Retention Waveform Data Retention Mode Vcc Vcc(min) tCDR CE or LB/UB VDR ≥ 1.5V Vcc(min) tR Note: Full device operation requires linear Vcc ramp from VDR to Vcc(min) > 100 µs Stock No. 23394-B 01/05 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 7 N08L163WC1C NanoAmp Solutions, Inc. 44 TSOP II Package (ZS44) 18.571 18.313 Advance Information 10.262 10.058 11.938 11.735 0.80 BSC 0.40 0.30 SEE DETAIL B DETAIL B 1.194 0.991 0.210 0.120 0o-5o 0.150 0.050 0.597 0.406 Stock No. 23394-B 01/05 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 8 N08L163WC1C NanoAmp Solutions, Inc. Ordering Information Advance Information N08L163WC1CX-XX X L L = Ultra Low Power Sort I = Industrial, -40°C to 85°C Temperature Performance 55 = 55ns Package Type T1 = 44 -TSOP II Pb-Free Package Revision History Revision A B Date Nov 9. 2004 Jan 14. 2005 Change Description Initial Advance Release General Update Released Under Document Control © 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments. Stock No. 23394-B 01/05 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 9