2SA1744

DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRAWING (UNIT: mm) FEATURES • High hFE and low VCE(sat): hFE ≥ 100 (VCE = −2 V, IC = −3 A) VCE(sat) ≤ 0.3 V (IC = −8 A, IB = −0.4 A) • Full-mold package that does not require an insulating board or bushing Electrode Connection 1. Base 2. Collector 3. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings −100 −60 −7.0 −15 −30 −7.5 30 2.0 150 −55 to +150 Unit V V V A A A W W °C °C * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13160EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 6$ (/(&75,&$/ &+$5$&7(5,67,&6 7A Parameter Collector to emitter voltage Collector to emitter voltage Symbol VCEO(SUS) VCEX(SUS) °& Conditions MIN. −60 −60 −10 −1.0 −10 −1.0 −10 100 100 60 −0.3 −0.5 −1.2 −1.5 300 80 0.3 1.5 0.3 V V V V pF MHz 400 TYP. MAX. Unit V V IC = −8.0 A, IB = −0.8 A, L = 1 mH IC = −8.0 A, IB1 = −IB2 = −0.8 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped VCB = −60 V, IE = 0 VCE = −60 V, RBE = 50 Ω, TA = 125°C VCE = −60 V, VBE(OFF) = 1.5 V VCE = −60 V, VBE(OFF) = 1.5 V, TA = 125°C VEB = −5.0 V, IC = 0 VCE = −2.0 V, IC = −1.5 A VCE = −2.0 V, IC = −3.0 A VCE = −2.0 V, IC = −8.0 A IC = −8.0 A, IB = −0.4 A IC = −12 A, IB = −0.6 A IC = −8.0 A, IB = −0.4 A IC = −12 A, IB = −0.6 A VCB = −10 V, IE = 0, f = 1.0 MHz VCE = −10 V, IC = −1.5 A IC = −8.0 A, RL = 6.3 Ω, IB1 = −IB2 = −0.4 A, VCC ≅ −50 V Refer to the test circuit. Collector cutoff current Collector cutoff current Collector cutoff current Collector cutoff current ICBO ICER ICEX1 ICEX2 µA mA µA mA Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Collector saturation voltage Base saturation voltage Base saturation voltage Collector capacitance Gain bandwidth product Turn-on time Storage time Fall time IEBO hFE1* hFE2* hFE3* VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2* Cob fT ton tstg tf µA µs µs µs 3XOVH WHVW 3: ≤  µV GXW\ F\FOH ≤  KFE &/$66,),&$7,21 Marking hFE2 M 100 to 200 L 150 to 300 K 200 to 400 6:,7&+,1* 7,0( Won Wstg Wf 7(67 &,5&8,7 %DVH FXUUHQW ZDYHIRUP &ROOHFWRU FXUUHQW ZDYHIRUP  'DWD 6KHHW '(-9'6 6$ 7