2SA1744

SPTECH Product Specification 2SA1744 SPTECH Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -3A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -15 A ICM Collector Current-Pulse -30 A IB Base Current-Continuous -7.5 A Total Power Dissipation @TC=25℃ 30 Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ W PT SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1744 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -8.0A ; IB= -0.8A, L= 1mH -60 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= -8.0A ; IB1=-IB2= -0.8A, VBE(OFF)=1.5V, L=180μH,clamped -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4A -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -12A; IB= -0.6A -0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -8A; IB= -0.4A -1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -12A; IB= -0.6A -1.5 V ICBO Collector Cutoff Current VCB= -60V ; IE=0 -10 μA ICER Collector Cutoff Current VCE= -60V ; RBE= 50Ω,Ta=125℃ -1.0 mA ICEX Collector Cutoff Current VCE= -60V; VBE(off)= -1.5V VCE= -60V; VBE(off)= -1.5V,Ta=125℃ -10 -1.0 μA mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -10 μA hFE-1 DC Current Gain IC= -1.5A; VCE= -2V 100 hFE-2 DC Current Gain IC= -3.0A; VCE= -2V 100 hFE-3 DC Current Gain IC= -8.0A; VCE= -2V 60 COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz 300 pF Current-Gain—Bandwidth Product IC= -1.5A; VCE= -10V 80 MHz fT CONDITIONS MIN TYP. MAX UNIT 400 Switching times ton Turn-on Time tstg Storage Time tf  IC= -8.0A, RL= 6.3Ω, IB1= -IB2= -0.4A, VCC≈ -50V Fall Time 0.3 μs 1.5 μs 0.3 μs hFE-2 Classifications M L K 100-200 150-300 200-400 SPTECH website：www.superic-tech.com 2