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NEZ1011-4E

NEZ1011-4E

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    NEZ1011-4E - 4W X, Ku-BAND POWER GaAs MESFET - NEC

  • 数据手册
  • 价格&库存
NEZ1011-4E 数据手册
DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability. FEATURES • High Output Power : Po (1 dB) = +36.5 dBm typ. • High Linear Gain • High Efficiency : 8.0 dB typ. (NEZ1011-4E), 7.0 dB typ. (NEZ1414-4E) : 30 % typ. • Input and Output Internally Matched for Optimum performance ORDERING INFORMATION Part Number NEZ1011-4E NEZ1414-4E T-78 Package Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NEZ1011-4E, NEZ1414-4E) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Symbol VDS VGS IDS Ratings 15 –7 4.5 (NEZ1011-4E) 5.0 (NEZ1414-4E) +40 –40 30 175 –65 to +175 Unit V V A Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature IGF IGR PT Tch Tstg mA mA W °C °C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. T he information in this document is subject to change without notice. Document No. P13729EJ1V0DS00 (1st edition) Date Published September 1998 N CP(K) Printed in Japan © 1998 NEZ1011-4E, NEZ1414-4E RECOMMENDED OPERATING LIMITS Characteristics Drain to Source Voltage Gain Compression Channel Temperature Gate Resistance Note Symbol VDS Gcomp Tch Rg Test Condition MIN. 9.0 TYP. 9.0 MAX. 9.0 3 +130 Unit V dB °C Ω 50 100 100 Note Rg is the series resistance between the gate supply and the FET gate. [NEZ1011-4E] ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Breakdown Voltage Thermal Resistance Linear Gain Output Power at 1 dB Gain Comp. Drain Current at 1 dB Gain Comp. Power Added Efficiency at 1 dB Gain Compression Point Symbol IDSS Vp BVGD Rth GL Po (1 dB) IDS (1 dB) Test Conditions VDS = 1.5 V, VGS = 0 V VDS = 2.5 V, IDS = 20 mA IGD = 20 mA Channel to Case f = 10.7, 11.2, 11.7 GHz VDS = 9.0 V IDS = 1.0 A (RF OFF) Rg = 100 Ω 7.5 35.5 MIN. 1.0 –3.0 15 TYP. 3.0 –1.3 18 4.5 8.0 36.5 1.5 30 2.0 5.0 MAX. 5.0 –0.5 Unit A V V °C/W dB dBm A % η add (1 dB) [NEZ1414-4E] ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Breakdown Voltage Thermal Resistance Linear Gain Output Power at 1 dB Gain Comp. Drain Current at 1 dB Gain Comp. Power Added Efficiency at 1 dB Gain Compression Point Symbol IDSS Vp BVGD Rth GL Po (1 dB) IDS (1 dB) Test Conditions VDS = 1.5 V, VGS = 0 V VDS = 2.5 V, IDS = 20 mA IGD = 20 mA Channel to Case f = 14.0 to 14.5 GHz VDS = 9.0 V IDS = 1.0 A (RF OFF) Rg = 100 Ω 6.5 35.5 MIN. 1.0 –3.0 15 TYP. 3.2 –1.3 18 4.5 7.0 36.5 1.5 30 2.0 5.0 MAX. 5.0 –0.5 Unit A V V °C/W dB dBm A % η add (1 dB) 2 NEZ1011-4E, NEZ1414-4E [NEZ1011-4E] TYPICAL CHARACTERISTICS (TA = 25°C) OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER Pout +35 Pout - Output Power - dBm 100 +30 80 60 +25 η add 40 20 0 +20 +25 Pin - Input Power - dBm +30 TEST CONDITIONS Vds : 9.0 (V) Ids : 1.0 (A) η add - Efficiency - % 3 NEZ1011-4E, NEZ1414-4E [NEZ1011-4E] TYPICAL S-PARAMETERS Vds = 9.0 V, Ids = 1.0 A START 9.5 GHz, STOP 13 GHz, STEP 100 MHz Marker 1: 10.7 GHz 2: 11.7 GHz S11 1.0 0.5 1 2.0 +135° S12 +90° +45° 1 0 2 ∞ ±180° 2 0° –135° –0.5 –1.0 –2.0 –90° –45° Rmax = 1 Rmax = 0 .25 S21 +90° +135° 1 +45° 0.5 S22 1.0 2.0 1 2 ±180° 2 0° 0 ∞ –135° –90° –45° –0.5 –1.0 –2.0 Rmax = 5 Rmax = 1 4 NEZ1011-4E, NEZ1414-4E [NEZ1011-4E] TYPICAL S-PARAMETERS MAG. AND ANG. Vds = 9.0 V, Ids = 1.0 A FREQUENCY GHz MAG. S11 ANG. (deg.) 9.50 9.60 9.70 9.80 9.90 10.0 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11.0 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8 11.9 12.0 12.1 12.2 12.3 12.4 12.5 12.6 12.7 12.8 12.9 13.0 0.808 0.804 0.798 0.789 0.780 0.766 0.749 0.731 0.710 0.691 0.669 0.650 0.627 0.609 0.588 0.566 0.550 0.524 0.506 0.478 0.451 0.417 0.379 0.341 0.304 0.274 0.263 0.271 0.303 0.357 0.407 0.460 0.513 0.561 0.598 0.630 179.055 168.383 158.051 146.727 135.662 124.043 112.652 100.935 89.862 78.878 67.945 57.863 47.469 37.803 27.688 18.069 8.220 –1.893 –11.790 –22.938 –33.982 –47.047 –60.571 –76.768 –95.779 –118.124 –145.737 –172.724 162.348 141.947 125.337 111.286 99.419 89.321 79.619 71.300 0.019 0.017 0.015 0.012 0.011 0.012 0.015 0.019 0.024 0.029 0.034 0.039 0.044 0.049 0.054 0.058 0.062 0.066 0.070 0.073 0.079 0.081 0.093 0.093 0.098 0.104 0.094 0.102 0.096 0.094 0.105 0.097 0.102 0.105 0.077 0.081 MAG. S12 ANG. (deg.) –18.853 –38.301 –62.578 –93.344 –131.118 –174.154 151.687 124.921 99.883 84.103 66.265 50.653 35.150 20.157 5.015 –9.340 –21.464 –36.585 –48.432 –61.285 –75.815 –88.501 –104.010 –118.795 –134.939 –149.771 –165.658 178.664 165.648 150.336 132.447 120.080 103.224 84.711 71.048 52.286 2.066 2.197 2.269 2.352 2.471 2.482 2.461 2.510 2.488 2.474 2.475 2.454 2.431 2.429 2.407 2.408 2.432 2.426 2.418 2.481 2.470 2.461 2.480 2.506 2.478 2.464 2.435 2.290 2.240 2.185 2.033 1.885 1.800 1.672 1.507 1.519 MAG. S21 ANG. (deg.) –102.998 –118.883 –132.026 –144.473 –161.198 –176.783 168.247 153.100 138.455 124.010 109.525 95.033 81.189 67.353 53.239 39.911 25.663 11.430 –2.187 –16.224 –31.745 –46.165 –59.674 –76.725 –92.963 –109.064 –124.801 –142.774 –158.173 –172.841 169.758 153.319 138.636 125.618 111.708 98.212 0.447 0.421 0.394 0.367 0.337 0.310 0.285 0.265 0.251 0.241 0.239 0.243 0.250 0.258 0.269 0.277 0.282 0.287 0.289 0.284 0.279 0.267 0.253 0.236 0.216 0.194 0.169 0.147 0.134 0.134 0.148 0.173 0.205 0.237 0.272 0.310 MAG. S22 ANG. (deg.) –95.846 –105.299 –114.514 –125.039 –136.795 –149.479 –163.977 179.944 162.988 145.277 128.314 112.141 97.192 83.465 71.625 60.635 49.711 39.742 29.876 19.752 10.004 –0.072 –10.327 –21.965 –34.361 –48.732 –66.384 –87.640 –113.117 –142.110 –167.786 170.682 153.313 139.218 127.162 115.475 5 NEZ1011-4E, NEZ1414-4E [NEZ1414-4E] TYPICAL CHARACTERISTICS (TA = 25°C) OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER Pout +35 Pout - Output Power - dBm 100 +30 80 60 +25 40 η add 20 0 +20 +25 +30 +35 TEST CONDITIONS Vds : 9.0 (V) Ids : 1.0 (A) Pin - Input Power - dBm 6 η add - Efficiency - % NEZ1011-4E, NEZ1414-4E [NEZ1414-4E] TYPICAL S-PARAMETERS Vds = 9.0 V, Ids = 1.0 A START 12.5 GHz, STOP 16 GHz, STEP 100 MHz Marker 1: 14.0 GHz 2: 14.5 GHz S11 1.0 0.5 2.0 +135° 1 2 0 1 ∞ ±180° 2 0° S12 +90° +45° –0.5 –1.0 –2.0 –135° –90° –45° Rmax = 1 Rmax = 0.25 S21 +90° +135° 2 1 +45° 0.5 S22 1.0 2.0 ±180° 0° 1 0 2 ∞ –135° –90° –45° –0.5 –1.0 –2.0 Rmax = 5 Rmax = 1 7 NEZ1011-4E, NEZ1414-4E [NEZ1414-4E] TYPICAL S-PARAMETERS MAG. AND ANG. Vds = 9.0 V, Ids = 1.0 A FREQUENCY GHz MAG. S11 ANG. (deg.) 12.5 12.6 12.7 12.8 12.9 13.0 13.1 13.2 13.3 13.4 13.5 13.6 13.7 13.8 13.9 14.0 14.1 14.2 14.3 14.4 14.5 14.6 14.7 14.8 14.9 15.0 15.1 15.2 15.3 15.4 15.5 15.6 15.7 15.8 15.9 16.0 0.710 0.706 0.702 0.694 0.684 0.668 0.652 0.624 0.603 0.572 0.536 0.496 0.464 0.425 0.383 0.346 0.312 0.291 0.270 0.273 0.288 0.317 0.357 0.399 0.450 0.495 0.545 0.587 0.628 0.665 0.700 0.736 0.764 0.796 0.820 0.844 5.854 –1.451 –8.933 –16.167 –24.314 –32.206 –40.198 –48.517 –56.795 –66.211 –73.816 –83.375 –93.712 –105.017 –116.933 –131.623 –146.773 –165.802 173.854 152.140 129.738 109.673 90.989 74.602 59.655 46.224 33.500 22.098 11.759 1.712 –6.849 –14.840 –22.150 –29.088 –34.695 –40.155 0.035 0.039 0.041 0.045 0.041 0.046 0.045 0.046 0.068 0.061 0.086 0.079 0.086 0.082 0.085 0.084 0.084 0.086 0.088 0.092 0.090 0.095 0.093 0.088 0.090 0.082 0.078 0.075 0.071 0.067 0.068 0.062 0.059 0.055 0.051 0.047 MAG. S12 ANG. (deg.) –51.698 –59.965 –74.802 –94.861 –91.082 –109.131 –118.640 –132.469 –144.425 –163.193 –169.956 175.557 149.580 143.513 115.220 104.014 92.742 75.665 67.427 53.834 36.718 24.122 4.922 –13.630 –27.101 –47.151 –56.443 –70.871 –83.671 –94.660 –110.735 –122.904 –138.482 –150.217 –164.596 –177.292 1.691 1.652 1.759 1.787 1.795 1.915 1.956 2.067 2.046 2.033 2.253 2.308 2.108 2.190 2.166 2.083 2.115 2.183 2.169 2.086 2.093 2.088 2.028 2.002 1.937 1.818 1.697 1.616 1.494 1.384 1.285 1.192 1.107 1.018 0.934 0.870 MAG. S21 ANG. (deg.) –18.771 –34.833 –40.700 –49.347 –67.342 –78.177 –92.835 –111.821 –123.801 –136.230 –150.794 –161.327 –177.346 168.591 155.522 139.486 126.023 110.404 94.615 79.954 64.738 49.906 35.341 20.599 4.118 –12.303 –27.670 –42.673 –59.125 –74.120 –86.966 –100.324 –114.343 –127.006 –140.279 –152.445 0.534 0.507 0.481 0.454 0.425 0.396 0.368 0.337 0.310 0.283 0.258 0.232 0.212 0.191 0.175 0.163 0.156 0.154 0.155 0.159 0.166 0.175 0.184 0.192 0.201 0.207 0.213 0.215 0.216 0.213 0.208 0.199 0.191 0.178 0.163 0.152 MAG. S22 ANG. (deg.) 152.677 146.706 140.530 134.371 127.218 119.741 112.317 103.608 94.595 84.222 74.018 62.258 47.865 32.941 16.435 –1.633 –19.078 –37.253 –54.975 –71.407 –87.012 –101.570 –114.672 –126.772 –137.968 –147.601 –157.291 –165.987 –174.257 177.449 169.969 162.164 154.917 145.779 136.442 125.025 8 NEZ1011-4E, NEZ1414-4E PACKAGE DIMENSIONS (UNIT: mm) 8.25 ±0.15 Gate Source 9.7 ±0.13 2.74 ±0.1 R 0.65 Drain 13 ±0.1 16.5 ±0.13 1.8 ±0.1 9 ±0.3 3.0 ±0.2 0.2 MAX. 9 NEZ1011-4E, NEZ1414-4E RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Partial Heating Soldering Conditions Pin temperature: 260°C Time: 5 seconds or less (per pin row) Recommended Condition Symbol – For details of recommended soldering conditions, please contact your local NEC sales office. 10 NEZ1011-4E, NEZ1414-4E [MEMO] 11 NEZ1011-4E, NEZ1414-4E Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5
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