NEZ1011-8E

DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability. FEATURES • High Output Power : Po (1 dB) = +39.5 dBm typ. • High Linear Gain • High Efficiency : 6.5 dB typ. : 25 % typ. • Input and Output Internally Matched for Optimum performance ORDERING INFORMATION Part Number NEZ1011-8E NEZ1414-8E T-61 Package Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NEZ1011-8E, NEZ1414-8E) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS IDS IGF IGR PT Tch Tstg Ratings 15 –7 10 +80 –80 60 175 –65 to +175 Unit V V A mA mA W °C °C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. T he information in this document is subject to change without notice. Document No. P13730EJ1V0DS00 (1st edition) Date Published September 1998 N CP(K) Printed in Japan © 1998 NEZ1011-8E, NEZ1414-8E RECOMMENDED OPERATING LIMITS Characteristics Drain to Source Voltage Gain Compression Channel Temperature Gate Resistance Note Symbol VDS Gcomp Tch Rg Test Condition MIN. 9.0 TYP. 9.0 MAX. 9.0 3 +130 Unit V dB °C Ω 25 50 50 Note Rg is the series resistance between the gate supply and the FET gate. [NEZ1011-8E] ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Breakdown Voltage Thermal Resistance Linear Gain Output Power at 1 dB Gain Comp. Drain Current at 1 dB Gain Comp. Power Added Efficiency at 1 dB Gain Compression Point 3rd Order Intermodulation Distortion Symbol IDSS Vp BVGD Rth GL Po (1 dB) IDS (1 dB) Test Conditions VDS = 1.5 V, VGS = 0 V VDS = 2.5 V, IDS = 40 mA IGD = 40 mA Channel to Case f = 10.7, 11.2, 11.7 GHz VDS = 9.0 V IDS = 2.0 A (RF OFF) Rg = 100 Ω 6.0 38.5 MIN. 2.8 –3.0 15 TYP. 6.0 –1.3 18 2.0 6.5 39.5 3.0 25 4.0 2.5 MAX. 10.0 –0.5 Unit A V V °C/W dB dBm A % η add (1 dB) IM3 Pout = +35 dBm (2 tone) –40 dBc [NEZ1414-8E] ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Breakdown Voltage Thermal Resistance Linear Gain Output Power at 1 dB Gain Comp. Drain Current at 1 dB Gain Comp. Power Added Efficiency at 1 dB Gain Compression Point Symbol IDSS Vp BVGD Rth GL Po (1 dB) IDS (1 dB) Test Conditions VDS = 1.5 V, VGS = 0 V VDS = 2.5 V, IDS = 40 mA IGD = 40 mA Channel to Case f = 14.0 to 14.5 GHz VDS = 9.0 V IDS = 2.8 A (RF OFF) Rg = 50 Ω 6.0 38.5 MIN. 2.8 –3.0 15 TYP. 6.0 –1.3 18 2.0 6.5 39.5 3.0 25 4.0 2.5 MAX. 10.0 –0.5 Unit A V V °C/W dB dBm A % η add (1 dB) 2 NEZ1011-8E, NEZ1414-8E [NEZ1011-8E] TYPICAL CHARACTERISTICS (TA = 25°C) OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER Pout +40 Pout - Output Power - dBm +35 100 80 60 +30 40 η add 20 0 +25 +20 +25 +30 +35 Pin - Input Power - dBm TEST CONDITIONS Vds : 9.0 (V) Ids : 2.0 (A) η add - Efficiency - % 3 NEZ1011-8E, NEZ1414-8E [NEZ1011-8E] TYPICAL S-PARAMETERS Vds = 9.0 V, Ids = 2.0 A START 9.5 GHz, STOP 13 GHz, STEP 100 MHz Marker 1: 10.7 GHz 2: 11.7 GHz S11 1.0 0.5 2.0 +135° 2 S12 +90° +45° 2 0 ∞ ±180° 1 0° 1 –135° –90° –45° –0.5 –1.0 –2.0 Rmax = 1 Rmax = 1.25 S21 +90° +135° 2 +45° 0.5 S22 1.0 2.0 2 ±180° 1 0° 0 1 ∞ –135° –90° –45° –0.5 –1.0 –2.0 Rmax = 5 Rmax = 1 4 NEZ1011-8E, NEZ1414-8E [NEZ1011-8E] TYPICAL S-PARAMETERS MAG. AND ANG. Vds = 9.0 V, Ids = 2.0 A FREQUENCY GHz MAG. S11 ANG. (deg.) 9.50 9.60 9.70 9.80 9.90 10.0 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11.0 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8 11.9 12.0 12.1 12.2 12.3 12.4 12.5 12.6 12.7 12.8 12.9 13.0 0.727 0.717 0.707 0.697 0.681 0.669 0.651 0.633 0.615 0.600 0.590 0.575 0.563 0.547 0.529 0.504 0.472 0.441 0.401 0.371 0.341 0.326 0.327 0.338 0.362 0.391 0.420 0.451 0.473 0.505 0.524 0.542 0.558 0.568 0.577 0.580 29.554 19.366 10.017 1.221 –7.330 –15.631 –23.940 –31.970 –40.075 –48.156 –57.169 –66.560 –76.461 –87.670 –99.371 –112.403 –126.595 –141.927 –158.639 –177.181 161.832 140.637 118.354 97.661 79.871 63.483 49.351 35.770 23.977 12.820 1.167 –10.274 –21.957 –33.558 –44.917 –56.927 0.061 0.061 0.062 0.066 0.064 0.067 0.068 0.070 0.071 0.076 0.077 0.079 0.082 0.085 0.086 0.089 0.094 0.094 0.100 0.100 0.098 0.099 0.092 0.093 0.091 0.085 0.097 0.084 0.091 0.091 0.074 0.079 0.070 0.061 0.068 0.057 MAG. S12 ANG. (deg.) 49.394 32.211 16.953 3.572 –16.830 –25.967 –42.735 –54.626 –65.648 –80.522 –94.352 –108.905 –122.327 –137.200 –150.698 –164.614 177.842 162.856 146.114 129.091 112.914 96.568 80.503 65.329 50.589 35.117 19.695 4.460 –12.616 –26.785 –47.445 –62.095 –81.900 –99.035 –104.322 –122.085 2.416 2.379 2.297 2.194 2.182 2.159 2.157 2.113 2.124 2.160 2.168 2.194 2.225 2.283 2.355 2.383 2.383 2.419 2.441 2.418 2.399 2.355 2.292 2.258 2.198 2.152 2.081 2.062 2.009 1.761 1.885 1.943 1.730 1.669 1.711 1.435 MAG. S21 ANG. (deg.) 101.075 85.352 69.447 54.428 40.517 25.306 9.631 –3.713 –17.972 –31.941 –46.564 –61.585 –76.377 –91.375 –107.667 –123.937 –140.142 –156.755 –173.945 168.826 151.919 134.838 118.389 101.371 84.496 68.413 53.466 33.009 20.173 7.324 –10.696 –26.022 –43.492 –65.419 –83.874 –101.076 0.123 0.154 0.184 0.207 0.228 0.245 0.258 0.268 0.277 0.284 0.286 0.281 0.271 0.258 0.240 0.214 0.184 0.149 0.112 0.080 0.068 0.087 0.123 0.166 0.208 0.250 0.289 0.324 0.355 0.384 0.406 0.429 0.450 0.469 0.483 0.496 MAG. S22 ANG. (deg.) 16.609 3.506 –7.383 –16.617 –25.262 –33.785 –41.160 –48.333 –55.412 –63.112 –71.222 –79.151 –87.488 –96.273 –105.618 –116.124 –128.678 –142.948 –161.741 169.285 122.798 79.892 53.880 36.764 23.286 11.758 1.857 –8.099 –17.427 –26.354 –36.071 –45.862 –55.707 –65.401 –75.637 –85.711 5 NEZ1011-8E, NEZ1414-8E [NEZ1414-8E] TYPICAL CHARACTERISTICS (TA = 25°C) OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY vs. INPUT POWER Pout +40 Pout - Output Power - dBm +35 100 80 60 +30 40 20 0 +25 +30 Pin - Input Power - dBm +35 η add +25 +20 TEST CONDITIONS Vds : 9.0 (V) Ids : 2.8 (A) 6 η add - Efficiency - % NEZ1011-8E, NEZ1414-8E [NEZ1414-8E] TYPICAL S-PARAMETERS Vds = 9.0 V, Ids = 2.8 A START 12.5 GHz, STOP 16 GHz, STEP 100 MHz Marker 1: 14.0 GHz 2: 14.5 GHz S11 1.0 0.5 2.0 +135° S12 +90° +45° 1 0 2 ∞ ±180° 2 0° 1 –0.5 –1.0 –2.0 –135° –90° –45° Rmax = 1 Rmax = 0.25 S21 +90° +135° 2 +45° 0.5 S22 1.0 2.0 1 ±180° 1 0° 0 2 ∞ –135° –90° –45° –0.5 –1.0 –2.0 Rmax = 5 Rmax = 1 7 NEZ1011-8E, NEZ1414-8E [NEZ1414-8E] TYPICAL S-PARAMETERS MAG. AND ANG. Vds = 9.0 V, Ids = 2.8 A FREQUENCY GHz MAG. S11 ANG. (deg.) 12.5 12.6 12.7 12.8 12.9 13.0 13.1 13.2 13.3 13.4 13.5 13.6 13.7 13.8 13.9 14.0 14.1 14.2 14.3 14.4 14.5 14.6 14.7 14.8 14.9 15.0 15.1 15.2 15.3 15.4 15.5 15.6 15.7 15.8 15.9 16.0 0.721 0.708 0.692 0.679 0.662 0.646 0.627 0.611 0.586 0.558 0.529 0.494 0.448 0.402 0.352 0.304 0.269 0.250 0.256 0.286 0.322 0.366 0.407 0.444 0.477 0.503 0.526 0.544 0.562 0.572 0.584 0.591 0.598 0.606 0.624 0.603 139.415 132.772 126.118 119.449 112.727 105.975 98.571 91.070 82.834 74.382 64.540 55.184 43.623 30.135 14.210 –4.327 –27.205 –53.572 –79.363 –103.241 –122.532 –138.154 –151.177 –161.592 –171.208 –178.844 174.212 167.849 162.291 156.702 151.882 147.100 142.592 138.519 133.547 124.123 0.063 0.060 0.061 0.068 0.062 0.065 0.067 0.072 0.057 0.070 0.054 0.061 0.071 0.069 0.084 0.082 0.081 0.080 0.072 0.066 0.064 0.056 0.056 0.055 0.048 0.050 0.047 0.049 0.052 0.056 0.060 0.069 0.076 0.082 0.095 0.135 MAG. S12 ANG. (deg.) 65.789 49.865 38.512 31.414 1.636 –6.348 –23.775 –37.200 –37.231 –53.072 –56.314 –74.305 –76.429 –99.610 –102.548 –119.795 –136.199 –148.309 –162.986 –173.622 173.480 166.468 156.879 149.490 145.649 143.612 137.404 136.461 131.212 122.258 122.717 113.154 109.553 100.716 96.384 81.547 1.090 1.189 1.072 1.012 1.162 1.168 1.251 1.517 1.519 1.532 1.728 1.688 1.798 1.904 1.895 2.076 2.078 2.172 2.227 2.154 2.098 2.048 1.904 1.832 1.666 1.375 1.149 1.021 0.825 0.682 0.621 0.535 0.458 0.396 0.326 0.212 MAG. S21 ANG. (deg.) 90.045 72.305 63.885 51.496 35.162 25.472 10.965 –2.589 –18.701 –34.930 –43.120 –56.186 –83.164 –97.068 –116.284 –140.185 –157.244 –173.417 165.716 143.074 121.360 99.845 79.398 59.640 35.789 12.636 –6.188 –25.470 –47.459 –67.206 –82.501 –100.688 –122.328 –143.083 –169.106 168.591 0.648 0.627 0.604 0.583 0.560 0.538 0.521 0.505 0.482 0.467 0.451 0.433 0.407 0.379 0.347 0.306 0.253 0.188 0.126 0.110 0.180 0.285 0.396 0.504 0.598 0.681 0.747 0.796 0.835 0.852 0.866 0.865 0.866 0.849 0.810 0.830 MAG. S22 ANG. (deg.) –135.265 –142.873 –150.787 –158.823 –167.023 –175.622 176.137 167.049 158.613 149.864 140.419 132.405 123.168 113.048 102.547 91.198 76.864 58.116 25.259 –37.318 –85.219 –111.360 –129.289 –143.650 –156.091 –166.923 –176.864 174.066 165.850 157.773 150.892 144.212 138.057 130.919 124.834 118.132 8 NEZ1011-8E, NEZ1414-8E PACKAGE DIMENSIONS (UNIT: mm) 0.5±0.05 1.5 Chamfer 4 Places 1.6R±0.1 2 Places 3.2 12.9 6.45±0.05 2.5 MIN. Source Drain 17.0 21.0±0.3 10.7 1.6 5.0 MAX. Gate Gate Side Indicator 0.1–0.01 +0.05 2.6±0.15 12.0 0.2 MAX. 9 NEZ1011-8E, NEZ1414-8E RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Partial Heating Soldering Conditions Pin temperature: 260°C Time: 5 seconds or less (per pin row) Recommended Condition Symbol – For details of recommended soldering conditions, please contact your local NEC sales office. 10 NEZ1011-8E, NEZ1414-8E [MEMO] 11 NEZ1011-8E, NEZ1414-8E Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5