2N4923

2N4923 Silicon NPN Transistor Audio Power Amp, Switch TO−126 Type Package Description: The 2N4923 is a silicon NPN transistors in a TO−126 plastic package designed for use as driver circuits, switching, and amplifier applications. Features: D Lo saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A D Excellent Power Dissipation: PD = 30W @ TC = +25C D Excellent Safe Operating Area D Gain Specified to IC = 1A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A (3A) Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case (Note 2), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.16C/W Note 1. The 1A maximum IC value is based upon JEDEC current gain requirements. The 3A maximum value is based upon actual current handling capability of the device. Note 2. Recommend use of thermal compound for lowest thermal resistance. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 3 ICEO VCE = 40V, IB = 0 − − 0.5 mA ICEX VCE = 80V, VEB(off) = 1.5V − − 0.1 mA VCE = 80V, VEB(off) = 1.5V, TC = +125C − − 0.5 mA ICBO VCB = 80V, IE = 0 − − 0.1 mA IEBO VBE = 5V, IC = 0 − − 1.0 mA Note 3. Pulse test: Pulse Width = 300s, Duty Cycle = 2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 50mA, VCE = 1V 40 − − IC = 500mA, VCE = 1V 30 − 150 IC = 1A, VCE = 1V 10 − − ON Characteristics (Note 3) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 100mA − − 0.6 V Base−Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 100mA − − 1.3 V Base−Emitter ON Voltage VBE(on) IC = 1A, VCE = 1V − − 1.3 V 3.0 − − MHz pF Dynamic Characteristics Current Gain−Bandwidth Product fT IC = 250mA, VCE = 10V, f = 1MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 100kHz − − 100 Small−Signal Current Gain hfe IC = 250mA, VCE = 10V, f = 1MHz 25 − − Note 3. Pulse test: Pulse Width  300s, Duty Cycle  2%. .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max