NTE74HC126

NTE74HC125 & NTE74HC126 Integrated Circuit TTL − High Speed CMOS, Quad Bus Buffer with 3−State Outputs Description: The NTE74HC125 and NTE74HC126 are high speed CMOS quad bus buffers in a 14−Lead plastic DIP type package fabricated in silicon gate C2MOS technology. The have the same high speed performance of LS−TTL combined with true CMOS low power consumption. These devices require the same 3−State control input G to be taken high to make the output go into the high impedance state. All inputs are equipped with protection circuits against static discharge and transient excess voltage. Features: D High Speed: tPD = 8ns (typ) at VCC = 5V D Low Power Dissipation: ICC = 4μA (max) at +25°C D Output Drive Capability: 15 LS−TTL Loads D Balanced Propagation Delays: tPLH = tPHL D Symmetrical Output Impedance: IOL = |IOH| = 6mA (min) D High Noise Immunity: VNIH = VNIL = 28% VCC (min) D Wide Operating Voltage range: VCC(opr) = 2V to 6V Absolute Maximum Ratings: (Note 1) Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to +7.0V DC Voltage, VI, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to VCC +0.5 DC Diode Current, IIK, IOK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20mA DC Output Source Sink Current (Per Pin), IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35mA DC VCC or GND Current, ICC or IGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±70mA Power Dissipation (Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C Note 1. Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Note 2. 500mW: ` +65°C derate to 300mW by 10mW/°C: +65° to +85°C. Recommended Operating Conditions: Parameter Symbol Min Typ Max Unit VCC 2.0 − 6.0 V VIN, VOUT 0 − VCC V Operating Temperature Range TA −40 − +85 °C Input Rise or Fall Times VCC = 2.0V tr, tf − − 1000 ns VCC = 4.5V − − 500 ns VCC = 6.0V − − 400 ns Supply Voltage DC Input or Output Voltage DC Electrical Characteristics: Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage CMOS Loads Symbol -555 to +1255C Max Min Max Min Max Unit − − 1.5 − 1.5 − V 3.15 − − 3.15 − 3.15 − V 6.0 4.2 − − 4.2 − 4.2 − V 2.0 − − 0.5 − 0.5 − 0.5 V 4.5 − − 1.35 − 1.35 − 1.35 V 6.0 − − 1.8 − 1.8 − 1.8 V 2.0 1.9 2.0 − 1.9 − 1.9 − V 4.5 4.4 4.5 − 4.4 − 4.4 − V 6.0 5.9 6.0 − 5.9 − 5.9 − V IO = −6mA 4.5 4.18 4.31 − 4.13 − 4.10 − V IO = −7.8mA 6.0 5.68 5.80 − 5.63 − 5.60 − V 2.0 − 0.0 0.1 − 0.1 − 0.1 V 4.5 − 0.0 0.1 − 0.1 − 0.1 V 6.0 − 0.0 0.1 − 0.1 − 0.1 V IO = 6mA 4.5 − 0.17 0.26 − 0.33 − 0.4 V IO = −7.8mA 6.0 − 0.18 0.26 − 0.33 − 0.4 V Test Conditions VIH TTL Loads Low Level Output Voltage CMOS Loads -405 to +855C VIH VOH VIN = VIH or VIL, IO = −20μA VI = VIH or VIL VOL TTL Loads VIN = VIH or VIL, IO = 20μA VIN = VIH or VIL +255C VCC (V) Min Typ 2.0 1.5 4.5 Input Leakage Current IIN VIN = VCC or GND 6.0 − − ±0.1 − ±1.0 − ±1.0 μA 3−State Output Off−State Current IOZ VIN = VIH or VIL, VO = VCC or GND 6.0 − − ±0.5 − ±5.0 − ±10 μA Quiescent Device Current ICC VIN = VCC or GND, IO = 0mA 6.0 − − 4.0 − 40 − 80 μA AC Electrical Characteristics: (tr = tf = 6ns) Parameter Output Transition Time Symbol Test Conditions tTLH, tTHL CL = 50pF +255C -405 to +855C -555 to +1255C Max Min Max Min Max Unit 20 60 − 75 − 90 ns − 6 12 − 15 − 18 ns − 5 10 − 13 − 15 ns VCC (V) Min Typ 2.0 − 4.5 6.0 AC Electrical Characteristics (Cont’d): (tr = tf = 6ns) Parameter Test Conditions Symbol Propagation Delay Time tPLH, tPHL CL = 50pF CL = 150pF 3−State Output Enable Time tPZL, tPZH CL = 50pF, RL = 1KΩ CL = 150pF, RL = 1KΩ 3−State Output Disable Time tPLZ, tPHZ CL = 50pF, RL = 1KΩ Input Capacitance CIN Power Dissipation Capacitance CPD Note 3 +255C -405 to +855C -555 to +1255C Max Min Max Min Max Unit 36 75 − 95 − 110 ns − 9 15 − 19 − 22 ns 6.0 − 8 13 − 16 − 19 ns 2.0 − 52 105 − 130 − 160 ns 4.5 − 13 21 − 26 − 32 ns 6.0 − 11 18 − 22 − 27 ns 2.0 − 36 75 − 95 − 110 ns 4.5 − 9 15 − 19 − 22 ns 6.0 − 8 13 − 16 − 19 ns 2.0 − 52 105 − 130 − 160 ns 4.5 − 13 21 − 26 − 32 ns 6.0 − 11 18 − 22 − 27 ns 2.0 − 48 80 − 100 − 120 ns 4.5 − 12 16 − 20 − 24 ns 6.0 − 10 14 − 17 − 20 ns − − 5 10 − 10 − 10 pF − − 35 − − − − − pF VCC (V) Min Typ 2.0 − 4.5 Note 3. CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the following equation: ICC(opr) = CPD • VCC • fIN + ICC. A X L H NTE74HC125 G H L L Truth Tables: A X L H Y Z L H NTE74HC126 G L H H Y Z L H Pin Connection Diagram NTE74HC125 NTE74HC126 1G 1 14 VCC 1G 1 14 VCC 1A 2 1Y 3 13 4 G 12 4 A 1A 2 1Y 3 13 4 G 12 4 A 2G 4 11 4 Y 2G 4 11 4 Y 2A 5 10 3 G 2A 5 10 3 G 2Y 6 9 3A 2Y 6 9 3A GND 7 8 3Y GND 7 8 3Y 14 8 1 7 .300 (7.62) .785 (19.95) Max .200 (5.08) Max .100 (2.45) .600 (15.24) .099 (2.5) Min