PMST2222

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 PMST2222; PMST2222A NPN switching transistors Product data sheet Supersedes data of 1997 Jul 14 1999 Apr 22 NXP Semiconductors Product data sheet NPN switching transistors FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT323 plastic package. PNP complement: PMST2907A. MARKING TYPE NUMBER PMST2222 PMST2222A Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1B ∗1P 1 Top view 2 handbook, halfpage PMST2222; PMST2222A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 MAM062 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST2222 PMST2222A VCEO collector-emitter voltage PMST2222 PMST2222A VEBO emitter-base voltage PMST2222 PMST2222A IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector − − − − − − −65 − −65 5 6 600 800 200 200 +150 150 +150 V V mA mA mA mW °C °C °C open base − − 30 40 V V CONDITIONS open emitter − − 60 75 V V MIN. MAX. UNIT 1999 Apr 22 2 NXP Semiconductors Product data sheet NPN switching transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current PMST2222 collector cut-off current PMST2222A IEBO hFE collector cut-off current DC current gain PARAMETER thermal resistance from junction to ambient PMST2222; PMST2222A CONDITIONS note 1 VALUE 625 UNIT K/W CONDITIONS IE = 0; VCB = 50 V IE = 0; VCB = 50 V; Tj = 125 °C IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 125 °C IC = 0; VEB = 3 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V IC = 150 mA; VCE = 1 V; note 1 IC = 150 mA; VCE = 10 V; note 1 − − − − − MIN. MAX. 10 10 10 10 10 − − − − − 300 − − 400 1.6 300 1 1.3 2.6 1.2 2 8 30 25 − − UNIT nA µA nA µA nA 35 50 75 50 100 30 40 IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35 DC current gain PMST2222 PMST2222A VCEsat collector-emitter saturation voltage PMST2222 collector-emitter saturation voltage PMST2222A VBEsat base-emitter saturation voltage PMST2222 base-emitter saturation voltage PMST2222A Cc Ce collector capacitance emitter capacitance PMST2222 PMST2222A fT transition frequency PMST2222 PMST2222A IC = 500 mA; VCE = 10 V; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz − − − − − − 0.6 − − − − mV V mV V V V V V pF pF pF MHz MHz IC = 20 mA; VCE = 20 V; f = 100 MHz 250 300 1999 Apr 22 3 NXP Semiconductors Product data sheet NPN switching transistors PMST2222; PMST2222A SYMBOL F PARAMETER noise figure CONDITIONS IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − MIN. MAX. 4 UNIT dB Switching times (between 10% and 90% levels); (see Fig.2) ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − − − − − − 35 15 20 250 200 60 ns ns ns ns ns ns handbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Ω Vi R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1999 Apr 22 4 NXP Semiconductors Product data sheet NPN switching transistors PACKAGE OUTLINE PMST2222; PMST2222A Plastic surface mounted package; 3 leads SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 22 5 NXP Semiconductors Product data sheet NPN switching transistors DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION PMST2222; PMST2222A This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 Apr 22 6 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/02/pp7 Date of release: 1999 Apr 22 Document order number: 9397 750 05756