PMST5550,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 PMST5550; PMST5551 NPN high-voltage transistors Product data sheet Supersedes data of 1997 May 20 1999 Apr 29 NXP Semiconductors Product data sheet NPN high-voltage transistors PMST5550; PMST5551 FEATURES PINNING • Low current (max. 300 mA) PIN • High voltage (max. 160 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • Switching and amplification in high voltage applications such as telephony. DESCRIPTION 3 handbook, halfpage NPN high-voltage transistor in a SOT323 plastic package. PNP complement: PMST5401. 3 1 MARKING 2 MARKING CODE(1) TYPE NUMBER PMST5550 ∗1F PMST5551 ∗G3 1 2 Top view MAM062 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter PMST5550 − 160 V PMST5551 − 180 V PMST5550 − 140 V PMST5551 − 160 V collector-emitter voltage open base VEBO emitter-base voltage − 6 V IC collector current (DC) − 300 mA ICM peak collector current − 600 mA IBM peak base current − 100 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 29 2 NXP Semiconductors Product data sheet NPN high-voltage transistors PMST5550; PMST5551 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 625 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current PMST5550 collector cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 100 V − 100 nA IE = 0; VCB = 100 V; Tamb = 100 °C − 100 µA IE = 0; VCB = 120 V − 50 nA IE = 0; VCB = 120 V; Tamb = 100 °C − 50 µA IEBO emitter cut-off current IC = 0; VEB = 4 V − 50 nA hFE DC current gain VCE = 5 V; (see Fig.2) IC = 1 mA 60 − IC = 10 mA 60 250 IC = 50 mA; note 1 20 − IC = 1 mA 80 − IC = 10 mA 80 250 IC = 50 mA; note 1 30 − collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 150 mV collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1 PMST5550 − 250 mV PMST5551 − 200 mV − 1 V PMST5550 − 1.2 V PMST5551 − 1 V PMST5551 PMST5550 DC current gain PMST5551 VCEsat VBEsat VCE = 5 V; (see Fig.2) base-emitter saturation voltage IC = 10 mA; IB = 1 mA base-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1 Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 6 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 30 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 100 300 MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz − 8 dB PMST5551 Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 29 3 NXP Semiconductors Product data sheet NPN high-voltage transistors PMST5550; PMST5551 MGD814 160 handbook, full pagewidth hFE 120 VCE = 5 V 80 40 0 10−1 1 10 102 103 IC mA Fig.2 DC current gain; typical values. 1999 Apr 29 4 NXP Semiconductors Product data sheet NPN high-voltage transistors PMST5550; PMST5551 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1999 Apr 29 REFERENCES IEC JEDEC EIAJ SC-70 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet NPN high-voltage transistors PMST5550; PMST5551 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 Apr 29 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/04/pp7 Date of release: 1999 Apr 29 Document order number: 9397 750 05907