FDMS86350

N-Channel PowerTrench® MOSFET General Description 80 V, 130 A, 2.4 mΩ Features „ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A This N-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A Applications „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Primary MOSFET „ MSL1 robust package design „ Synchronous Rectifier „ 100% UIL tested „ Load Switch „ RoHS Compliant „ Motor Control Switch Bottom Top S Pin 1 D D D S S Pin 1 S D G S D S D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG TC = 25 °C Power Dissipation TA = 25 °C Units V ±20 V 130 (Note 1a) 25 (Note 4) 300 (Note 3) Power Dissipation Ratings 80 A 864 mJ 156 (Note 1a) Operating and Storage Junction Temperature Range W 2.7 -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 0.8 (Note 1a) 45 °C/W Package Marking and Ordering Information Device Marking FDMS86350 Device FDMS86350 ©2013 Semiconductor Components Industries, LLC August-2017, Rev. 2 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units Publication Order number: FDMS86350/D FDMS86350 N-Channel PowerTrench® MOSFET FDMS86350 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.5 V 80 V 45 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.5 3.8 -12 mV/°C VGS = 10 V, ID = 25 A 2.0 2.4 VGS = 8 V, ID = 22 A 2.5 3.2 VGS = 10 V, ID = 25 A, TJ = 125 °C 3.1 3.8 VDS = 5 V, ID = 25 A 70 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 40 V, VGS = 0 V, f = 1 MHz 0.1 8030 10680 pF 1370 1825 pF 31 50 pF 1.1 3 Ω 50 80 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 40 V, ID = 25 A, VGS = 10 V, RGEN = 6 Ω 34 55 ns 40 65 ns 11 20 ns Total Gate Charge VGS = 0 V to 10 V 110 155 nC Qg Total Gate Charge VGS = 0 V to 8 V 90 127 Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 40 V, ID = 25 A nC 46 nC 23 nC Drain-Source Diode Characteristics IS Diode Continuous Forward Current TC = 25 °C 130 A IS, pulse Diode Pulse Current TC = 25 °C 300 A VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.71 1.2 VGS = 0 V, IS = 25 A (Note 2) 0.79 1.3 IF = 25 A, di/dt = 100 A/μs V 63 101 ns 62 100 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 45 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 115 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 864 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 24 A, VDD = 80 V, VGS = 10 V, 100% test at L = 0.1 mH, IAS = 74 A. 4. Pulse Id limited by junction temperature, td