FDMS86368-F085

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 80 V, 80 A, 4.5 mW VDSS RDS(ON) MAX ID MAX 80 V 4.5 mW @ 10 V 80 A ELECTRICAL CONNECTION FDMS86368-F085 Features • • • • • Typical RDS(on) = 3.7 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10 V, ID = 80 A UIS Capability AEC−Q101 Qualified These Devices are Pb−Free and are RoHS Compliant N−Channel MOSFET Applications • • • • • Top G Parameter Ratings Unit Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V Drain Current (TC = 25°C) Continuous (VGS = 10 V) (Note 1) Pulsed EAS Single Pulse Avalanche Energy (Note 2) PD Power Dissipation Derate above 25°C TJ, TSTG Operating and Storage Temperature S MARKING DIAGRAM ON AYWWWL 82 mJ 214 1.43 W W/°C −55 to +175 °C Thermal Resistance (Junction to case) 0.7 °C/W RθJA Maximum Thermal Resistance (Junction to Ambient) (Note 3) 50 °C/W FDMS 86368 A Y WW WL FDMS 86368 = Assembly Location = Year = Work Week = Assembly Lot = Device Code = Device Code (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting TJ = 25°C, L = 40 μH, IAS = 64 A, VDD = 80 V during inductor charging and VDD = 0 V during time in avalanche. 3. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. October, 2021 − Rev. 4 D A 80 (see Fig. 124) RθJC © Semiconductor Components Industries, LLC, 2014 S D Pin 1 VDSS ID S D DFNW8 CASE 507AU MOSFET MAXIMUM RATINGS (TJ = 25°C, Unless otherwise specified) Symbol Bottom D Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12 V Systems 1 ORDERING INFORMATION Device Package Shipping† FDMS86368−F085 DFNW8 (Power56) (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: FDMS86368−F085/D FDMS86368−F085 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS BVDSS IDSS IGSS Drain−to−Source Breakdown Voltage ID = 250 mA, VGS = 0 V 80 V Drain−to−Source Leakage Current VDS = 80 V, VGS = 0 V, TJ = 25°C 1 mA VDS = 80 V, VGS = 0 V, TJ = 175°C (Note 4) 1 mA Gate−to−Source Leakage Current VGS = ±20 V ±100 nA 3.0 4.0 V mW ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA 2.0 RDS(on) Drain to Source On Resistance ID = 80 A, VGS = 10 V, TJ = 25°C 3.7 4.5 ID = 80 A, VGS = 10 V, TJ = 175°C (Note 4) 7.4 9.0 DYNAMIC CHARACTERISTICS VDS = 40 V, VGS = 0 V, f = 1 MHz Ciss Input Capacitance Coss Output Capacitance 636 Crss Reverse Transfer Capacitance 20 Rg Qg(ToT) Qg(th) Gate Resistance f = 1 MHz Total Gate Charge VGS = 0 V to 10 V Threshold Gate Charge VGS = 0 V to 2 V pF 4350 2.5 VDD = 64 V, ID = 80 A 57 W 75 nC 60 ns 8 Qgs Gate−to−Source Gate Charge 23 Qgd Gate−to−Drain “Miller” Charge 11 SWITCHING CHARACTERISTICS ton Turn−On Time td(on) Turn−On Delay 23 Rise Time 22 Turn−Off Delay 32 Fall Time 13 tr td(off) tf toff VDD = 40 V, ID = 80 A, VGS = 10V, RGEN = 6 W Turn−Off Time 59 DRAIN−SOURCE DIODE CHARACTERISTICS V SD Source−to−Drain Diode Voltage ISD = 80 A, VGS = 0 V ISD = 40 A, VGS = 0 V t Reverse−Recovery Time IF = 80 A, DISD/Dt = 100 A/ms, VDD = 64 V rr Q rr Reverse−Recovery Charge 1.25 1.2 V 58 75 ns 49 67 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTE: 4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDMS86368−F085 1.2 200 ID, DRAIN CURRENT (A) 0.8 0.6 0.4 0.2 0.0 Current Limited by Package 175 1.0 150 125 VGS = 10 V Current Limited by Silicon 100 75 50 25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 0 175 Figure 1. Normalized Power Dissipation vs. Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZqJC 1 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 Notes: Duty Factor: D = t1/t2 Peak TJ = PDM x ZqJC x RqJC + TC Single Pulse 10−4 10−3 10−2 10−1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 1000 TC = 25°C For temperatures above 25°C derate peak current as follows: VGS = 10 V I + I2 100 ƪǸ ƫ 175 * T C 150 Single Pulse 10 10−5 10−4 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Duty Cycle − Descending Order 0.01 10−5 IDM, PEAK CURRENT (A) POWER DISSIPATION MULTIPLIER TYPICAL CHARACTERISTICS 10−3 10−2 10−1 t, RECTANGULAR PULSE DURATION (s) Figure 4. Peak Current Capability www.onsemi.com 3 100 101 FDMS86368−F085 TYPICAL CHARACTERISTICS 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 10 100 ms Operation in this area may be limited by RDS(on) 1 1 ms 10 ms 100 ms Single Pulse TC = 25°C TJ = Max Rated 0.1 0.01 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV=(L)(IAS)/(1.3*Rated BVDSS − VDD) If R ≠ 0 tAV=(L/R)In[(IAS*R)/(1.3*Rated BVDSS − VDD)+1] 100 Starting TJ = 25°C 10 Starting TJ = 150°C 1 0.001 500 0.01 100 1 10 0.1 tAV, TIME IN AVALANCHE (ms) 1000 NOTE: Refer to onsemi Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 300 Pulse Duration = 80 ms Duty Cycle = 0.5% Max 250 VDD = 5 V 200 150 TJ = 175°C 100 TJ = −55°C TJ = 25°C 50 0 300 10 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 175°C 9 0.0 150 300 80 ms Pulse Width TJ = 25°C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 0.4 0.6 0.8 1.0 1.2 Figure 8. Forward Diode Characteristics VGS 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 250 0.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics 300 TJ = 25°C 1 0.1 2 VGS = 0 V 100 100 50 80 ms Pulse Width TJ = 175°C 250 VGS 15 V Top 10 V 8V 7V 6V 5.5 V 5 V Bottom 200 150 100 5V 50 5V 0 0 1 2 3 4 0 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDMS86368−F085 ID = 80 A 2.2 Pulse Duration = 80 ms Duty Cycle = 0.5% Max NORMALIZED DRAIN TO SOURCE ON−RESISTANCE RDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) 40 30 TJ = 175°C 20 TJ = 25°C 10 0 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) Pulse Duration = 80 ms Duty Cycle = 0.5% Max 2.0 1.8 1.6 1.4 1.2 1.0 ID = 80 A VGS = 10 V 0.8 0.6 0.4 −80 10 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE (V) NORMALIZED GATE THRESHOLD VOLTAGE (V) 1.2 VGS = VGS ID = 250 μA 1.0 0.8 0.6 0.4 −40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (°C) ID = 5 mA 1.05 1.00 0.95 0.90 −80 200 VGS, GATE TO SOURCE VOLTAGE (V) 10000 Ciss 1000 Coss 100 10 f = 1 Mhz VGS = 0 V Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) −40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (°C) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Figure 13. Normalized Gate Threshold Voltage vs. Temperature CAPACITANCE (pF) 200 1.10 1.4 1 0.1 0 40 160 80 120 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Normalized RDS(on) vs. Junction Temperature Figure 11. RDS(on) vs. Gate Voltage 0.2 −80 −40 100 Figure 15. Capacitance vs. Drain to Source Voltage 10 VDD = 32 V ID = 80 A 8 VDD = 40 V VDD = 48 V 6 4 2 0 0 10 40 20 30 Qg, GATE CHARGE (nC) 50 60 Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 FDMS86368−F085 PACKAGE DIMENSIONS DFNW8 5.2x6.3, 1.27P CASE 507AU ISSUE A www.onsemi.com 6 FDMS86368−F085 POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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