FDWS86368-F085

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 80 V, 80 A, 4.5 mW FDWS86368-F085 VDSS RDS(ON) MAX ID MAX 80 V 4.5 mW @ 10 V 80 A ELECTRICAL CONNECTION Features • • • • • • Typical RDS(on) = 3.7 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10 V, ID = 80 A UIS Capability Wettable Flanks for Automatic Optical Inspection (AOI) AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant N−Channel MOSFET Applications • • • • • Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12 V Systems Top Bottom D G S S D D D S Pin 1 DFNW8 CASE 507AU MOSFET MAXIMUM RATINGS (TJ = 25°C, Unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain−to−Source Voltage 80 V VGS Gate−to−Source Voltage ±20 V ID Drain Current (TC = 25°C) Continuous (VGS = 10 V) (Note 1) Pulsed 80 (See Figure 4) A ON AYWWWL EAS Single Pulse Avalanche Energy (Note 2) 82 mJ PD Power Dissipation 214 W Derate Above 25°C 1.43 W/°C −55 to +175 °C TJ, TSTG Operating and Storage Temperature MARKING DIAGRAM RθJC Thermal Resistance, Junction to Case 0.7 °C/W RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 50 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting TJ = 25°C, L = 40 mH, IAS = 64 A, VDD = 80 V during inductor charging and VDD = 0 V during time in avalanche. 3. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2 oz copper. FDWS 86368 A Y WW WL FDWS 86368 = Assembly Location = Year = Work Week = Assembly Lot = Device Code = Device Code (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† FDWS86368−F085 DFNW8 (Power56) (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes please © Semiconductor Components Industries, LLC, 2016 October, 2021 − Rev. 4 1 Publication Order Number: FDWS86368−F085/D FDWS86368−F085 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS BVDSS IDSS IGSS Drain−to−Source Breakdown Voltage ID = 250 mA, VGS = 0 V 80 V Drain−to−Source Leakage Current VDS = 80 V, VGS = 0 V, TJ = 25°C 1 mA VDS = 80 V, VGS = 0 V, TJ = 175°C (Note 4) 1 mA Gate−to−Source Leakage Current VGS = ±20 V ±100 nA 3.0 4.0 V mW ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA 2.0 RDS(on) Drain to Source On Resistance ID = 80 A, VGS = 10 V, TJ = 25°C 3.7 4.5 ID = 80 A, VGS = 10 V, TJ = 175°C (Note 4) 7.4 9.0 DYNAMIC CHARACTERISTICS VDS = 40 V, VGS = 0 V, f = 1 MHz Ciss Input Capacitance 4350 pF Coss Output Capacitance 636 pF Crss Reverse Transfer Capacitance 20 pF 2.5 W Rg Qg(TOT) Qg(th) Gate Resistance f = 1 MHz Total Gate Charge VGS = 0 V to 10 V Threshold Gate Charge VGS = 0 V to 2 V VDD = 64 V, ID = 80 A 57 75 nC 8 nC Qgs Gate−to−Source Gate Charge 23 nC Qgd Gate−to−Drain “Miller” Charge 11 nC SWITCHING CHARACTERISTICS ton Turn−On Time td(on) Turn−On Delay 23 ns Rise Time 22 ns Turn−Off Delay 32 ns Fall Time 13 tr td(off) tf toff VDD = 40 V, ID = 80 A, VGS = 10V, RGEN = 6 W 60 Turn−Off Time ns ns 59 ns 1.25 1.2 V 58 75 ns 49 67 nC DRAIN−SOURCE DIODE CHARACTERISTICS V SD Source−to−Drain Diode Voltage VGS = 0 V, ISD = 80 A VGS = 0 V, ISD = 40 A t Reverse−Recovery Time IF = 80 A, DISD/Dt = 100 A/ms, VDD = 64 V rr Q rr Reverse−Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDWS86368−F085 1.2 200 0.8 0.6 0.4 0.2 0.0 CURRENT LIMITED BY PACKAGE 175 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER TYPICAL CHARACTERISTICS 150 VGS = 10V CURRENT LIMITED BY SILICON 125 100 75 50 25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 175 25 Figure 1. Normalized Power Dissipation vs. Case Temperature 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, Z qJC 2 1 0.1 DUTY CYCLE − DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z qJC x RqJC + TC SINGLE PULSE 0.01 −5 10 −4 10 −3 −2 −1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 T C = 25 o C VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 25 175 − T C 150 100 10 −5 10 SINGLE PULSE −4 10 −3 −2 −1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FDWS86368−F085 TYPICAL CHARACTERISTICS 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 If R = 0 tAV = (L)(I AS)/(1.3*RATED BVDSS − VDD) If R 00 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS − VDD) +1] 100 10 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 0.1 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.01 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 25oC 10 STARTING TJ = 150 oC 1 0.001 500 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to onsemi Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 300 300 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 250 ID, DRAIN CURRENT (A) Figure 6. Unclamped Inductive Switching Capability VDD = 5V 200 150 TJ = 175oC 100 TJ = 25 oC 50 0 o TJ = −55 C 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 0.1 0.0 9 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS 80m s PULSE WIDTH Tj=25oC 0.2 0.4 0.6 0.8 1.0 1.2 Figure 8. Forward Diode Characteristics 300 150 TJ = 25 oC VSD, BODY DIODE FORWARD VOLTAGE (V) 300 200 TJ = 175 oC 1 Figure 7. Transfer Characteristics 250 VGS = 0 V 100 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 100 50 80ms PULSE WIDTH Tj=175oC 250 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 200 150 100 50 5V 5V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 5 Figure 9. Saturation Characteristics 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDWS86368−F085 rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) 40 ID = 80A NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 30 20 TJ = 175 oC TJ = 25 oC 10 0 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.6 1.4 1.2 1.0 0.8 ID = 80A VGS = 10V 0.6 0.4 −80 −40 0 40 80 120 160 TJ, JUNCTION TEMPERATUREo(C) 200 1.10 ID = 5mA 1.05 1.0 0.8 1.00 0.6 0.95 0.4 0.2 −80 −40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 −80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 Coss 100 10 f = 1MHz VGS = 0V 1 0.1 −40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 10000 CAPACITANCE (pF) 1.8 Figure 12. Normalized RDSON vs. Junction Temperature VGS = VDS ID = 250m A 1.2 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 2.2 2.0 Crss 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 15. Capacitance vs. Drain to Source Voltage 10 ID = 80A 8 VDD =32V VDD = 40V VDD = 48V 6 4 2 0 0 10 20 30 40 Qg, GATE CHARGE(nC) 50 60 Figure 16. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDWS86368−F085 PACKAGE DIMENSIONS DFNW8 5.2x6.3, 1.27P CASE 507AU ISSUE A www.onsemi.com 6 FDWS86368−F085 POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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