DATA SHEET
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MOSFET – P-Channel,
Logic Level, POWERTRENCH)
VDSS
RDS(ON) MAX
ID MAX
−40 V
8.0 mW @ −10 V
−65 A
-40 V, -65 A, 8.0 mW
D
FDWS9509L-F085
Features
•
•
•
•
•
•
G
Typ RDS(on) = 6.3 mW at VGS = −10 V; ID = −65 A
Typ Qg(tot) = 48 nC at VGS = −10 V; ID = −65 A
UIS Capability
Wettable Flanks for Automatic Optical Inspection (AOI)
AEC−Q101 Qualified and PPAP Capable
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
S
P−Channel MOSFET
Bottom
Top
G
Applications
•
•
•
•
•
•
•
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12 V Systems
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(VGS = 10 V) (Note 1)
TC = 25°C
Pulsed Drain Current
TC = 25°C
Symbol
Value
Unit
VDSS
−40
V
VGS
±16
V
ID
−65
A
See
Figure 4
EAS
84
mJ
Power Dissipation
PD
107
W
0.71
W/°C
TJ, TSTG
−55 to
+175
°C
Derate above 25°C
Thermal Resistance (Junction−to−Case)
RqJC
1.4
°C/W
Maximum Thermal Resistance
(Junction−to−Ambient) (Note 3)
RqJA
50
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by wirebond configuration.
2. Starting Tj = 25°C, L = 50 mH, IAS = 56 A, VDD = −40 V during inductor charging
and VDD = 0 V during time in avalanche.
3. RqJA is the sum of the junction−to−case and case−to−ambient thermal
resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design while RqJA
is determined by the user’s board design. The maximum rating presented
here is based on mounting on a 1 in2 pad of 2 oz copper.
© Semiconductor Components Industries, LLC, 2017
October, 2021 − Rev. 2
DD
Pin 1
MARKING DIAGRAM
Single Pulse Avalanche Energy (Note 2)
Operating and Storage Temperature
SS
D
DFNW8
CASE 507AU
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
S
D
1
ON AYWWWL
FDWS
9509L
A
= Assembly Location
Y
= Year
WW
= Work Week
WL
= Assembly Lot
FDWS9509L = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping†
FDWS9509L−F085
DFNW8
(Power 56)
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
FDWS9509L−F085/D
FDWS9509L−F085
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
−40
−
−
V
TJ = 25°C
−
−
1
mA
TJ = 175°C (Note 4)
−
−
1
mA
VGS = ±16 V
−
−
±100
nA
OFF CHARACTERISTICS
BVDSS
IDSS
IGSS
Drain−to−Source Breakdown Voltage
ID = −250 mA, VGS = 0 V
Drain−to−Source Leakage Current
VDS = −40 V,
VGS = 0 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate−to−Source Threshold Voltage
VGS = VDS, ID = −250 mA
−1
−1.7
−3
V
RDS(on)
Drain−to−Source On−Resistance
ID = −65 A, VGS = −4.5 V
−
10.7
15.3
mW
ID = −65 A
VGS = −10 V
TJ = 25°C
−
6.3
8.0
mW
TJ = 175°C (Note 4)
−
10.6
13.0
DYNAMIC CHARACTERISTICS
VDS = −20 V, VGS = 0 V, f = 1 MHz
pF
Ciss
Input Capacitance
−
3360
−
Coss
Output Capacitance
−
1230
−
Crss
Reverse Transfer Capacitance
−
38
−
−
21
−
W
−
48
67
nC
−
7
−
Rg
Gate Resistance
VGS = 0.5 V, f = 1 MHz
Qg(tot)
Total Gate Charge
VGS = 0 to −10 V
Qg(th)
Threshold Gate Charge
VGS = 0 to −2 V
VDD = −20 V,
ID = −65 A
Qgs
Gate−to−Source Gate Charge
−
12
−
Qgd
Gate−to−Drain “Miller” Charge
−
6
−
−
−
22
−
10
−
Rise Time
−
5
−
Turn−Off Delay
−
198
−
Fall Time
−
71
−
Turn−Off Time
−
−
405
ISD = −65 A, VGS = 0 V
−
1.0
−1.25
ISD = −32.5 A, VGS = 0 V
−
0.9
−1.2
IF = −65 A, dISD/dt = 100 A/ms
−
57
80
ns
−
45
67
nC
SWITCHING CHARACTERISTICS
ton
Turn−On Time
td(on)
Turn−On Delay
tr
td(off)
tf
toff
VDD = −20 V, ID = −65 A,
VGS = −10 V, RGEN = 6 W
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source−to−Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production
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2
FDWS9509L−F085
TYPICAL CHARACTERISTICS
100
0.8
0.6
0.4
0.2
0
VGS = −10 V
90
1.0
−ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
80
70
60
50
Current Limited
by Package
40
30
20
10
0
25
75
50
100
150
125
0
175
25
50
TC, CASE TEMPERATURE (°C)
125
100
150
175
TC, CASE TEMPERATURE (°C)
Figure 1. Normalized Power Dissipation vs.
Case Temperature
ZqJC, NORMALIZED THERMAL IMPEDANCE
75
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
2
1
0.1
DUTY CYCLE − DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
DUTY CYCLE, D = t1/t2
Peak TJ = PDM x ZqJC x RqJC + TC
Single Pulse
0.01
10−5
t2
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
IDM, PEAK CURRENT (A)
1000
TC = 25°C
For temperatures above 25°C
derate peak current as follows:
ƪǸ
I + I 25
100
VGS = −10 V
ƫ
175 * T C
150
Single Pulse
10
10−5
10−4
10−3
10−2
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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3
10−1
1
10
FDWS9509L−F085
TYPICAL CHARACTERISTICS (continued)
100
−IAS, AVALANCHE CURRENT (A)
−ID, DRAIN CURRENT (A)
1000
100
100 ms
10
Operation in this area may
be limited by RDS(on)
1
0.1
1 ms
TC = 25°C
TJ = Max Rated
Single Pulse
0.1
10 ms
100 ms
1
10
Starting TJ = 150°C
If R = 0
tAV = (L)(IAS)/(1.3*Rated BVDSS − VDD)
If R ≠ 0
tAV = (L/R)In[(IAS*R)/(1.3*Rated BVDSS − VDD) +1]
1
0.001
100 200
10
Starting TJ = 25°C
0.01
1
0.1
−VDS, DRAIN TO SOURCE VOLTAGE (V)
100
10
1000
tAV, TIME IN AVALANCHE (ms)
Figure 6. Unclamped Inductive Switching Capability
Figure 5. Forward Bias Safe Operating Area
(Note: Refer to onsemi Applications Notes AN7514 and
AN7515)
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
250
VDS = −5 V
200
TJ = 175°C
150
TJ = 25°C
100
50
TJ = −55°C
2
5
TJ = 175°C
1
TJ = 25°C
0.1
0.01
TJ = −55°C
0
0.6
0.8
1.0
1.2
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
−5 V
150
−4 V
100
−3.5 V
50
1
2
3
−7 V
−5 V
−4.5 V
150
−4 V
100
−3.5 V
50
0
1
2
3
4
−VDS, DRAIN TO SOURCE VOLTAGE (V)
−VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
1.4
200
0
5
4
VGS = −10 V
250 ms Pulse Width
TJ = 175°C
−7 V
−4.5 V
0
0.4
−VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS = −10 V
200
0.2
−VGS, GATE TO SOURCE VOLTAGE (V)
250 ms Pulse Width
TJ = 25°C
250
0
10
0.001
7
6
VGS = 0 V
250
300
−ID, DRAIN CURRENT (A)
4
3
100
−ID, DRAIN CURRENT (A)
0
300
−IS, REVERSE DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
300
5
FDWS9509L−F085
TYPICAL CHARACTERISTICS (continued)
NORMALIZED DRAIN TO SOURCE
ON−RESISTANCE
RDS(on), DRAIN TO SOURCE
ON−RESISTANCE (mW)
60
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
50
ID = −65 A
40
30
20
TJ = 175°C
10
TJ = 25°C
4
5
6
7
8
9
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
1.6
1.5
ID = −65 A
VGS = −10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−75 −50 −25
10
25
50
75
100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. RDS(on) vs. Gate Voltage
Figure 12. Normalized RDS(on) vs. Junction
Temperature
1.8
1.25
VGS = VDS
ID = −250 mA
1.00
0.75
0.50
0.25
−80
−40
0
40
80
120
160
ID = −5 mA
1.5
1.2
0.9
0.6
−80
200
−VGS, GATE TO SOURCE VOLTAGE (V)
10000
Ciss
Coss
100
10
0.1
Crss
f = 1 MHz
VGS = 0 V
1
0
40
80
120
160
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
1000
−40
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
CAPACITANCE (pF)
0
−VGS, GATE TO SOURCE VOLTAGE (V)
NORMALIZED DRAIN−TO−SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE THRESHOLD VOLTAGE
0
3
1.7
10
10
ID = −65 A
VDD = −16 V
8
VDD = −20 V
6
VDD = −24 V
4
2
0
150
0
10
20
30
40
Qg, GATE CHARGE (nC)
−VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 16. Gate Charge vs. Gate to Source
Voltage
Figure 15. Capacitance vs. Drain to Source
Voltage
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5
50
FDWS9509L−F085
PACKAGE DIMENSIONS
DFNW8 5.2x6.3, 1.27P
CASE 507AU
ISSUE A
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6
FDWS9509L−F085
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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