FDWS9510L-F085

FDWS9510L-F085 P-Channel Logic Level POWERTRENCH) MOSFET −40 V, −50 A, 13.5 mW Features • • • • • • Typ RDS(on) = 11 mW at VGS = −10 V; ID = −50 A Typ Qg(tot) = 28 nC at VGS = −10 V; ID = −50 A UIS Capability Wettable Flanks for Automatic Optical Inspection (AOI) AEC−Q101 Qualified These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX −40 V 13.5 mW @ −10 V −50 A Applications • • • • • • • Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12 V Systems D (5,6,7,8) G (4) S (1,2,3) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS −40 V Gate−to−Source Voltage VGS ±16 V ID −50 A Parameter Continuous Drain Current (VGS = 10 V) (Note 1) TC = 25°C Pulsed Drain Current TC = 25°C 1 DFN8 Power 56 CASE 506DW See Figure 4 mJ ORDERING INFORMATION 75 W See detailed ordering, marking and shipping information on page 2 of this data sheet. 0.5 W/°C TJ, TSTG −55 to +175 °C Thermal Resistance (Junction−to−Case) RqJC 2 °C/W Maximum Thermal Resistance (Junction−to−Ambient) (Note 3) RqJA 50 °C/W Single Pulse Avalanche Energy (Note 2) Power Dissipation EAS PD Derate above 25°C Operating and Storage Temperature 32 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by wirebond configuration 2. Starting Tj = 25°C, L = 40 mH, IAS = −40 A, VDD = −40 V during inductor charging and VDD = 0 V during time in avalanche 3. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqJA is determined by the user’s board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2 oz copper. © Semiconductor Components Industries, LLC, 2018 July, 2018 − Rev. 1 1 Publication Order Number: FDWS9510L−F085/D FDWS9510L−F085 PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity FDWS9510L Power 56 13″ 12 mm 3000 units FDWS9510L−F085 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Parameter Conditions Min Typ Max Unit Drain−to−Source Breakdown Voltage ID = −250 mA, VGS = 0 V −40 − − V TJ = 25°C − − 1 mA TJ = 175°C (Note 4) OFF CHARACTERISTICS BVDSS IDSS Drain−to−Source Leakage Current IGSS Gate−to−Source Leakage Current VDS = −40 V, VGS = 0 V − − 1 mA VGS = ±16 V − − ±100 nA ON CHARACTERISTICS VGS(th) Gate−to−Source Threshold Voltage VGS = VDS, ID = −250 mA −1 −1.8 −3 V RDS(on) Drain−to−Source On−Resistance ID = −25 A, VGS = −4.5 V − 18 23 mW TJ = 25°C − 11 13.5 mW TJ = 175°C (Note 4) − 18.8 23 − 2320 − ID = −50 A VGS = −10 V DYNAMIC CHARACTERISTICS VDS = −20 V, VGS = 0 V, f = 1 MHz pF Ciss Input Capacitance Coss Output Capacitance − 811 − Crss Reverse Transfer Capacitance − 38 − − 23 − W nC Rg Gate Resistance VGS = 0.5 V, f = 1 MHz Qg(tot) Total Gate Charge VGS = 0 to −10 V − 28 37 Qg(th) Threshold Gate Charge VGS = 0 to −1 V − 4 − VDD = −20 V, ID = −50 A − 7 − − 4 − − − 20 Qgs Gate−to−Source Gate Charge Qgd Gate−to−Drain “Miller” Charge SWITCHING CHARACTERISTICS ton Turn−On Time VDD = −20 V, ID = −50 A, VGS = −10 V, RGEN = 6 W ns td(on) Turn−On Delay Time − 10 − tr Turn−On Rise Time − 4 − td(off) Turn−Off Delay Time − 110 − Turn−Off Fall Time − 37 − Turn−Off Time − − 222 ISD = −50 A, VGS = 0 V − −1 −1.25 ISD = −25 A, VGS = 0 V − −0.9 −1.2 IF = −50 A, dISD/dt = 100 A/ms − 44 62 ns − 31 47 nC tf toff DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source−to−Drain Diode Voltage Trr Reverse Recovery Time Qrr Reverse Recovery Charge V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production www.onsemi.com 2 FDWS9510L−F085 1.2 60 1.0 50 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER TYPICAL CHARACTERISTICS 0.8 0.6 0.4 0.2 40 30 20 VGS = 10 V 10 0 0 0 ZqJC, NORMALIZED THERMAL IMPEDANCE Current Limited by Package 25 50 75 100 125 150 175 25 50 75 125 100 150 175 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C) Figure 1. Normalized Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature 2 1 50% Duty Cycle 20% PDM 10% 5% 0.1 2% t1 t2 DUTY CYCLE, D = t1/t2 Peak TJ = PDM X ZqJC X RqJC + TC 1% Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 1000 IDM, PEAK CURRENT (A) VGS = −10 V TC = 25°C For temperatures above 25°C derate peak current as follows: ƪǸ I + I 25 100 ƫ 175 * T C 150 Single Pulse 10 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (s) Figure 4. Peak Current Capability www.onsemi.com 3 0.1 1 10 FDWS9510L−F085 TYPICAL CHARACTERISTICS 1K 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) Operation in this area may be limited by package 100 100 ms 10 TC = 25°C TJ = Max Rated Single Pulse 1 ms 1 100 ms Operation in this area may be limited by RDS(on) 0.1 0.1 10 ms Starting TJ = 25°C 10 1 1 10 Starting TJ = 150°C If R = 0 tAV=(L)(IAS)/(1.3*Rated BVDSS− VDD) If R ≠ 0 tAV=(L/R)In[(IAS*R)/(1.3*Rated BVDSS− VDD)+1] 0.001 100 0.01 0.1 10 1 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (mS) Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 120 Pulse Duration = 250 ms Duty Cycle = 0.5% Max 90 VDS = 5 V 60 TJ = 25°C 30 TJ = 175°C TJ = −55°C 0 1 3 4 6 5 VGS = 0 V 10 1 0.1 TJ = 175°C 0.01 0.001 TJ = −55°C TJ = 25°C 0 0.2 0.6 0.4 0.8 1.2 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 150 250 ms Pulse Width TJ = 25°C VGS = 10 V 250 ms Pulse Width TJ = 175°C 7.0 V 5.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 150 2 100 VGS = 10 V 100 4.5 V 4.0 V 50 3.5 V 7.0 V 5.0 V 100 4.5 V 4.0 V 50 3.5 V 0 0 0 1 2 3 4 0 5 1 2 3 4 VDS, DRAIN−SOURCE VOLTAGE (V) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDWS9510L−F085 TYPICAL CHARACTERISTICS 1.8 Pulse Duration = 250 ms Duty Cycle = 0.5% Max 100 NORMALIZED DRAIN−SOURCE ON−RESISTANCE RDS(on), ON−RESISTANCE (mW) 120 80 ID = −50 A 60 40 TJ = 175°C 20 TJ = 25°C 0 4 6 5 8 7 9 1.2 1.0 Pulse Duration = 250 ms Duty Cycle = 0.5% Max 0.8 −40 0 40 80 120 160 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 11. RDS(on) vs. Gate Voltage Figure 12. Normalized RDS(on) vs. Junction Temperature 1.2 200 1.10 VGS = VDS ID = −250 mA 1.0 0.8 0.6 0.4 −80 −40 40 0 80 120 160 200 ID = 5 mA 1.05 1.00 0.95 0.90 −80 −40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 13. Normalized Gate Threshold Voltage vs. Temperature Figure 14. Normalized Drain−to−Source Breakdown Voltage vs. Junction Temperature VGS, GATE−TO−SOURCE VOLTAGE (V) 10K CAPACITANCE (pF) 1.4 0.6 −80 10 NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 3 ID = −50 A VGS = −10 V 1.6 CISS 1K COSS 100 f = 1 MHz VGS = 0 V CRSS 10 0.1 1 10 10 8 VDD = −24 V 6 VDD = −20 V 4 2 0 0 100 VDD = −16 V ID = −50 A 6 12 18 24 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 15. Capacitance vs. Drain−to−Source Voltage Figure 16. Gate Charge vs. Gate−to−Source Voltage POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC. www.onsemi.com 5 30 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5.1x6.3, 1.27P CASE 506DW ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13746G DFN8 5.1x6.3, 1.27P DATE 28 FEB 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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