NDF11N50ZG

NDF11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com VDSS RDS(ON) (MAX) @ 4.5 A 500 V 0.52 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol NDF Unit VDSS 500 V Continuous Drain Current, RqJC (Note 1) ID 12 A Continuous Drain Current TA = 100°C, RqJC (Note 1) ID 7.4 A Pulsed Drain Current, tP = 10 ms IDM 44 A Power Dissipation, RqJC PD 39 W Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, ID = 10 A EAS 420 mJ ESD (HBM) (JESD22−A114) Vesd 4000 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) VISO 4500 V Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns MOSFET dV/dt Rating Drain−to−Source Voltage dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 12 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. Id ≤ 10.5 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C. N−Channel D (2) G (1) S (3) MARKING DIAGRAM NDF11N50ZG NDF11N50ZH TO−220FP CASE 221AH NDF11N50ZG or NDF11N50ZH AYWW Gate Source Drain A Y WW G, H = Location Code = Year = Work Week = Pb−Free, Halogen−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2015 February, 2015 − Rev. 6 1 Publication Order Number: NDF11N50Z/D NDF11N50Z THERMAL RESISTANCE Symbol NDF11N50Z Unit Junction−to−Case (Drain) Parameter RqJC 3.2 °C/W Junction−to−Ambient Steady State (Note 3) RqJA 50 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA BVDSS 500 Breakdown Voltage Temperature Coefficient Reference to 25°C, ID = 1 mA DBVDSS/ DTJ Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Leakage Current 25°C VDS = 500 V, VGS = 0 V 0.6 IDSS V/°C 1 125°C mA 50 VGS = ±20 V IGSS Static Drain−to−Source On−Resistance VGS = 10 V, ID = 4.5 A RDS(on) Gate Threshold Voltage VDS = VGS, ID = 100 mA VGS(th) VDS = 15 V, ID = 4.5 A gFS Gate−to−Source Forward Leakage V ±10 mA 0.48 0.52 W 3.9 4.5 V ON CHARACTERISTICS (Note 4) Forward Transconductance 3.0 7.7 S DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) Output Capacitance (Note 5) VDS = 25 V, VGS = 0 V, f = 1.0 MHz Reverse Transfer Capacitance (Note 5) Total Gate Charge (Note 5) Gate−to−Source Charge (Note 5) VDD = 250 V, ID = 10.5 A, VGS = 10 V Gate−to−Drain (“Miller”) Charge (Note 5) Ciss 1097 1375 1645 Coss 132 166 199 Crss 30 40 50 Qg 23 46 69 Qgs 4.5 8.7 13 Qgd 12.5 25 37.5 pF nC Plateau Voltage VGP 6.2 V Gate Resistance Rg 1.4 W td(on) 15 ns RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time VDD = 250 V, ID = 10.5 A, VGS = 10 V, RG = 5 Ω Fall Time tr 32 td(off) 40 tf 23 SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage IS = 10.5 A, VGS = 0 V VSD Reverse Recovery Time VGS = 0 V, VDD = 30 V IS = 10.5 A, di/dt = 100 A/ms trr 310 ns Qrr 2.5 mC Reverse Recovery Charge 1.6 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Insertion mounted 4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. 5. Guaranteed by design. www.onsemi.com 2 NDF11N50Z TYPICAL CHARACTERISTICS 25 25 VDS = 25 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 10 V 20 7.0 V 15 6.5 V 10 6.0 V 5 20 15 10 TJ = 25°C TJ = 150°C 5 TJ = −55°C 5.5 V 5.0 V 0 5 10 15 20 5 6 7 8 9 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 4.5 A TJ = 25°C 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 1.00 0.95 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0 1 2 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Region versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage ID = 4.5 A VGS = 10 V 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) 10 VGS = 10 V TJ = 25°C 0.90 10.0 2.75 0.25 −50 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.95 2.50 3 Figure 1. On−Region Characteristics 1.00 0.40 5.5 0 25 BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1.15 ID = 1 mA 1.10 1.05 1.00 0.95 0.90 50 Figure 5. On−Resistance Variation with Temperature 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 6. BVDSS Variation with Temperature www.onsemi.com 3 11 150 NDF11N50Z TYPICAL CHARACTERISTICS 10 C, CAPACITANCE (pF) TJ = 150°C TJ = 125°C 1 0.1 50 100 150 200 250 300 350 400 450 500 TJ = 25°C VGS = 0 V f = 1 MHz Ciss Coss Crss 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Drain−to−Source Leakage Current versus Voltage Figure 8. Capacitance Variation VGS, GATE−TO−SOURCE VOLTAGE (V) 0 3250 3000 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0.01 300 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 QT 250 VDS 200 VGS QGS 150 QGD 100 VDS = 250 V ID = 10.5 A TJ = 25°C 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) 45 50 0 50 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IDSS, LEAKAGE (mA) 100 Figure 9. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge 1000 t, TIME (ns) IS, SOURCE CURRENT (A) 20 VDD = 250 V ID = 10.5 A VGS = 10 V td(off) tr tf 100 td(on) 10 1 10 TJ = 150°C 1 125°C 25°C −55°C 0.1 1 10 RG, GATE RESISTANCE (W) 100 0.3 Figure 10. Resistive Switching Time Variation versus Gate Resistance 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 11. Diode Forward Voltage versus Current www.onsemi.com 4 1.2 NDF11N50Z TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 100 100 ms 10 ms 1 ms 10 ms VGS v 30 V SINGLE PULSE TC = 25°C 10 dc 1 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 Figure 12. Maximum Rated Forward Biased Safe Operating Area NDF11N50Z 10 DUTY CYCLE = 0.5 R(t) (C/W) 1 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1E−06 1E−05 RqJC = 3.2°C/W Steady State 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 PULSE TIME (s) Figure 13. Thermal Impedance (Junction−to−Case) for NDF11N50Z LEADS HEATSINK 0.110″ MIN Figure 14. Isolation Test Diagram Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 1E+02 1E+03 NDF11N50Z ORDERING INFORMATION Package Shipping NDF11N50ZG Order Number TO−220FP (Pb−Free, Halogen−Free) 50 Units / Rail NDF11N50ZH TO−220FP (Pb−Free, Halogen−Free) 50 Units / Rail www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE F A E B P E/2 0.14 SCALE 1:1 Q D M B A A H1 M A1 C NOTE 3 1 2 3 L L1 3X 3X SEATING PLANE b2 c b 0.25 M B A M C A2 e SIDE VIEW FRONT VIEW SECTION D−D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA­ SURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.90 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.60 7.10 12.50 14.73 --2.80 3.00 3.40 2.80 3.20 DIM A A1 A2 b b2 c D E e H1 L L1 P Q GENERIC MARKING DIAGRAM* A NOTE 6 DATE 30 SEP 2014 NOTE 6 H1 D D XX XXXXXXXXX AWLYWWG A SECTION A−A ALTERNATE CONSTRUCTION 1 STYLE 1: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE DOCUMENT NUMBER: 98AON52577E DESCRIPTION: A WL Y WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−220 FULLPACK, 3−LEAD PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative