NGTB20N135IHRWG

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Other names and brands may be claimed as the property of others. NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. www.onsemi.com 20 A, 1350 V VCEsat = 2.20 V Eoff = 0.60 mJ Features • • • • • Extremely Efficient Trench with Fieldstop Technology 1350 V Breakdown Voltage Optimized for Low Losses in IH Cooker Application Reliable and Cost Effective Single Die Solution These are Pb−Free Devices C Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1350 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 15 V ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 0 V IFM 120 A Gate−emitter voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±25 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −40 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 40 20 C 120 March, 2017 − Rev. 1 TO−247 CASE 340AL E A A MARKING DIAGRAM 40 20 20N135IHR AYWWG W 394 197 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2017 G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB20N135IHRWG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB20N135IHR/D NGTB20N135IHRWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case Rating RqJC 0.38 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 5 mA V(BR)CES 1350 − − V VGE = 15 V, IC = 20 A VGE = 15 V, IC = 20 A, TJ = 175°C VCEsat − − 2.20 2.40 2.65 − V VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1350 V VGE = 0 V, VCE = 1350 V, TJ = 175°C ICES − − − − 0.5 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 5290 − pF Coes − 124 − Cres − 100 − Gate charge total Qg − 234 − Gate to emitter charge Qge − 39 − Qgc − 105 − TJ = 25°C VCC = 600 V, IC = 20 A Rg = 10 W VGE = 0 V/ 15V td(off) − 245 − tf − 175 − Eoff − 0.60 − mJ TJ = 150°C VCC = 600 V, IC = 20 A Rg = 10 W VGE = 0 V/ 15V td(off) − 270 − ns tf − 290 − Eoff − 1.40 − mJ VGE = 0 V, IF = 20 A VGE = 0 V, IF = 20 A, TJ = 175°C VF − − 1.80 2.70 2.10 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 600 V, IC = 20 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns DIODE CHARACTERISTIC Forward voltage Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB20N135IHRWG TYPICAL CHARACTERISTICS 250 TJ = 25°C VGE = 20 to 15 V 200 TJ = 150°C 13 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 11 V 150 10 V 100 9V 50 8V 7V 0 0 1 2 3 4 6 5 7 11 V 150 10 V 100 9V 50 8V 7V 8 0 1 2 3 4 6 5 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 160 VGE = 20 to 15 V 13 V 11 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 13 V 200 0 250 200 10 V 150 100 9V 50 7V 8V TJ = −40°C 0 140 120 TJ = 25°C 100 TJ = 150°C 80 60 40 20 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.00 100000 IC = 40 A 2.50 IC = 20 A 2.00 C, CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 to 15 V IC = 10 A 1.50 1.00 0.50 0.00 −75 −50 −25 10000 Cies 1000 Coes 100 Cres 10 TJ = 25°C 1 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB20N135IHRWG TYPICAL CHARACTERISTICS 16 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 60 50 40 TJ = 25°C 30 20 TJ = 150°C 10 0 14 12 10 8 6 4 VCE = 600 V VGE = 15 V IC = 20 A 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 50 100 200 150 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 1.4 250 1000 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.2 Eoff 1.0 0.8 0.6 VCE = 600 V VGE = 15 V IC = 20 A Rg = 10 W 0.4 0.2 tf 100 VCE = 600 V VGE = 15 V IC = 20 A Rg = 10 W 10 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 7 160 1000 5 SWITCHING TIME (ns) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 6 SWITCHING LOSS (mJ) td(off) Eoff 4 3 2 td(off) tf 100 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 1 0 10 5 20 35 50 65 80 5 20 35 50 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 80 NGTB20N135IHRWG TYPICAL CHARACTERISTICS 10000 1.8 Eoff 1.4 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.6 1.2 1 0.8 0.6 VCE = 600 V VGE = 15 V TJ = 150°C IC = 20 A 0.4 0.2 td(off) 1000 tf 100 0 VCE = 600 V VGE = 15 V TJ = 150°C IC = 20 A 10 5 15 25 35 45 55 65 75 5 85 15 25 35 45 55 65 75 RG, GATE RESISTOR (W) RG, GATE RESISTOR (W) Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg 1.8 85 1000 1.4 Eoff 1.2 1 0.8 0.6 IC = 20 A VGE = 15 V TJ = 150°C Rg = 10 W 0.4 0.2 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.6 td(off) tf 100 IC = 20 A VGE = 15 V TJ = 150°C Rg = 10 W 10 250 300 350 400 450 500 550 600 650 700 750 800 0 250 300 350 400 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1 ms 100 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1000 100 50 ms dc operation 10 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 1 10 100 VGE = 15 V, TC = 125°C 100 10 1 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB20N135IHRWG TYPICAL CHARACTERISTICS 140 1650 120 1600 TC = 80°C 80 1550 V(BR)CES (V) Ipk (A) 100 TC = 110°C 60 40 20 1500 1450 1400 VCE = 600 V, TJ ≤ 175°C, Rgate = 10 W, VGE = 0/15 V, Tcase = 80°C or 110°C (as noted), D = 0.5 0 0.01 0.1 1 10 1350 100 1300 −40 1000 −15 10 35 60 85 110 135 FREQUENCY (kHz) TJ, JUNCTION TEMPERATURE (°C) Figure 19. Collector Current vs. Switching Frequency Figure 20. Typical V(BR)CES vs. Temperature 1 RqJC = 0.385 50% Duty Cycle Ri (°C/W) R(t) (°C/W) 0.1 20% Junction R1 10% 5% 0.01 R2 Rn C2 Cn Ci = ti/Ri 2% C1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) Figure 21. IGBT Transient Thermal Impedance www.onsemi.com 6 0.1 Case ti (sec) 0.005757 0.000174 0.000122 0.025884 0.007153 0.001398 0.010643 0.002971 0.016539 0.006046 0.048615 0.006505 0.019522 0.051225 0.015924 0.198582 0.051783 0.193115 0.025689 1.23097 0.180713 0.553364 1 10 NGTB20N135IHRWG Figure 22. Test Circuit for Switching Characteristics www.onsemi.com 7 NGTB20N135IHRWG Figure 23. Definition of Turn On Waveform www.onsemi.com 8 NGTB20N135IHRWG Figure 24. Definition of Turn Off Waveform www.onsemi.com 9 NGTB20N135IHRWG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D B A NOTE 4 E SEATING PLANE 0.635 M P A D S NOTE 3 1 2X 2 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X Q E2 b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 E2/2 NOTE 4 B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGTB20N135IHR/D