NGTB30N135IHRWG

NGTB30N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on−state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications. http://onsemi.com 30 A, 1350 V VCEsat = 2.30 V Eoff = 0.85 mJ Features • • • • • Extremely Efficient Trench with Fieldstop Technology 1350 V Breakdown Voltage Optimized for Low Losses in IH Cooker Application Reliable and Cost Effective Single Die Solution These are Pb−Free Devices C Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching G E ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage @ TJ = 25°C Symbol Value Unit VCES 1350 V Collector current @ TC = 25°C @ TC = 100°C IC A Pulsed collector current, Tpulse limited by TJmax 10 ms pulse, VGE = 15 V ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax 10 ms pulse, VGE = 0 V IFM 120 A Gate−emitter voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±25 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −40 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C 60 30 120 August, 2013 − Rev. 0 C TO−247 CASE 340AL E A A 60 30 MARKING DIAGRAM 30N135IHR AYWWG W 394 197 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2013 G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB30N135IHRWG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB30N135IHR/D NGTB30N135IHRWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case Rating RqJC 0.38 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 5 mA V(BR)CES 1350 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 175°C VCEsat − − 2.30 2.50 2.65 − V VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1350 V VGE = 0 V, VCE = 1350 V, TJ = 175°C ICES − − − − 0.5 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 5290 − pF Coes − 124 − Cres − 100 − Gate charge total Qg − 234 − Gate to emitter charge Qge − 39 − Qgc − 105 − TJ = 25°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V td(off) − 250 − tf − 150 − Eoff − 0.85 − mJ TJ = 150°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V td(off) − 265 − ns tf − 225 − Eoff − 1.90 − mJ VGE = 0 V, IF = 30 A VGE = 0 V, IF = 30 A, TJ = 175°C VF − − 2.10 3.20 2.40 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 600 V, IC = 30 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns DIODE CHARACTERISTIC Forward voltage http://onsemi.com 2 NGTB30N135IHRWG TYPICAL CHARACTERISTICS 250 TJ = 25°C 13 V VGE = 20 to 15 V 200 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 11 V 150 10 V 100 9V 50 0 8V 1 2 3 4 6 5 7 11 V 10 V 100 9V 50 8V 7V 0 8 0 1 2 3 4 6 5 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 160 13 V 11 V IC, COLLECTOR CURRENT (A) VGE = 20 to 15 V 200 10 V 150 100 9V 50 0 0 1 7V 8V TJ = −40°C 2 3 4 5 6 7 140 TJ = 25°C 120 100 TJ = 150°C 80 60 40 20 0 8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 4.00 100000 3.50 IC = 60 A 3.00 IC = 30 A 2.50 IC = 15 A 2.00 1.50 1.00 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 13 V 150 250 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 to 15 V 200 7V 0 TJ = 150°C 10000 Cies 1000 Coes 100 Cres 10 0.50 0.00 −75 −50 −25 0 25 50 75 1 100 125 150 175 200 TJ = 25°C 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 NGTB30N135IHRWG TYPICAL CHARACTERISTICS 16 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 70 60 50 40 TJ = 25°C 30 20 TJ = 150°C 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 8 6 4 VCE = 600 V VGE = 15 V IC = 30 A 2 0 0 50 100 200 150 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 250 1000 2 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 12 4.0 2.5 Eoff 1.5 1 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 0.5 0 0 20 40 60 80 100 120 140 100 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 0 40 60 80 Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 1000 Eoff 4 3 2 td(off) tf 100 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 1 0 5 20 TJ, JUNCTION TEMPERATURE (°C) SWITCHING TIME (ns) 5 tf TJ, JUNCTION TEMPERATURE (°C) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 6 td(off) 10 160 7 SWITCHING LOSS (mJ) 14 20 35 50 65 10 80 5 20 35 50 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 4 80 NGTB30N135IHRWG TYPICAL CHARACTERISTICS 10000 2.5 Eoff 2 1.5 1 VCE = 600 V VGE = 15 V TJ = 150°C IC = 30 A 0.5 0 5 15 25 35 45 55 65 75 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 3 1000 tf 100 10 85 15 25 35 45 55 65 75 Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg 85 1000 1.5 1 IC = 30 A VGE = 15 V TJ = 150°C Rg = 10 W 0.5 td(off) SWITCHING TIME (ns) Eoff IC = 30 A VGE = 15 V TJ = 150°C Rg = 10 W VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 100 ms IC, COLLECTOR CURRENT (A) 1 ms 100 50 ms dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 1 10 250 300 350 400 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 10 tf 100 0 250 300 350 400 450 500 550 600 650 700 750 800 IC, COLLECTOR CURRENT (A) 5 Rg, GATE RESISTOR (W) 2 0.01 VCE = 600 V VGE = 15 V TJ = 150°C IC = 30 A Rg, GATE RESISTOR (W) 2.5 SWITCHING LOSS (mJ) td(off) 10 100 VGE = 15 V, TC = 125°C 100 10 1 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB30N135IHRWG TYPICAL CHARACTERISTICS 140 1650 120 1600 TC = 80°C 80 1550 V(BR)CES (V) Ipk (A) 100 TC = 110°C 60 40 20 1500 1450 1400 VCE = 600 V, TJ ≤ 175°C, Rgate = 10 W, VGE = 0/15 V, Tcase = 80°C or 110°C (as noted), D = 0.5 0 0.01 0.1 1 10 1350 100 1300 −40 1000 −15 10 35 60 85 110 135 FREQUENCY (kHz) TJ, JUNCTION TEMPERATURE (°C) Figure 19. Collector Current vs. Switching Frequency Figure 20. Typical V(BR)CES vs. Temperature 1 RqJC = 0.385 50% Duty Cycle Ri (°C/W) R(t) (°C/W) 0.1 20% Junction R1 10% 5% 0.01 Rn C2 Cn Ci = ti/Ri 2% C1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.001 0.000001 R2 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) Figure 21. IGBT Transient Thermal Impedance http://onsemi.com 6 0.1 Case ti (sec) 0.005757 0.000174 0.000122 0.025884 0.007153 0.001398 0.010643 0.002971 0.016539 0.006046 0.048615 0.006505 0.019522 0.051225 0.015924 0.198582 0.051783 0.193115 0.025689 1.23097 0.180713 0.553364 1 10 NGTB30N135IHRWG Figure 22. Test Circuit for Switching Characteristics http://onsemi.com 7 NGTB30N135IHRWG Figure 23. Definition of Turn On Waveform http://onsemi.com 8 NGTB30N135IHRWG Figure 24. Definition of Turn Off Waveform http://onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON16119F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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