NGTB30N135IHR1WG

NGTB30N135IHR1WG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on−state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications. www.onsemi.com Features • • • • • 30 A, 1350 V VCEsat = 2.4 V Eoff = 0.63 mJ Extremely Efficient Trench with Fieldstop Technology 1350 V Breakdown Voltage Optimized for Low Losses in IH Cooker Application Designed for High System Level Robustness These are Pb−Free Devices C Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching G E ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage @ TJ = 25°C Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax 10 ms pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C Symbol Value Unit VCES 1350 V IC A 60 30 ICM G C 120 A IF A IFM 120 A Gate−emitter voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±25 V Power Dissipation @ TC = 25°C @ TC = 100°C PD MARKING DIAGRAM 30N135IHR1 AYWWG W 394 197 Operating junction temperature range TJ −40 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. September, 2015 − Rev. 0 E 60 30 Diode pulsed current, Tpulse limited by TJmax 10 ms pulse, VGE = 0 V © Semiconductor Components Industries, LLC, 2015 TO−247 CASE 340AL 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB30N135IHR1WG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB30N135IHR1/D NGTB30N135IHR1WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case Rating RqJC 0.38 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 5 mA V(BR)CES 1350 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 175°C VCEsat − − 2.4 2.6 3.0 − V VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1350 V VGE = 0 V, VCE = 1350 V, TJ = 175°C ICES − − − − 0.5 5.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Input capacitance Cies − 5530 − pF Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 124 − Cres − 100 − Qg − 220 − Qge − 47 − Qgc − 100 − TJ = 25°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V td(off) − 200 − tf − 124 − Eoff − 0.63 − mJ TJ = 150°C VCC = 600 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V td(off) − 222 − ns tf − 221 − Eoff − 1.50 − mJ VGE = 0 V, IF = 30 A VGE = 0 V, IF = 30 A, TJ = 175°C VF − − 1.7 2.1 2.2 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 30 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns DIODE CHARACTERISTIC Forward voltage www.onsemi.com 2 NGTB30N135IHR1WG TYPICAL CHARACTERISTICS IC, COLLECTOR CURRENT (A) VGE = 20 to 13 V 80 10 V 60 40 9V 20 8V 7V 1 2 3 4 5 6 7 100 VGE = 20 to 13 V 80 10 V 60 9V 40 8V 20 7V 0 8 1 2 3 4 6 5 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 120 100 80 TJ = −55°C 10 V 60 40 9V 20 8V 0 1 2 3 4 8 120 11 V VGE = 20 to 13 V 0 11 V 0 IC, COLLECTOR CURRENT (A) 0 IC, COLLECTOR CURRENT (A) TJ = 150°C 100 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 120 11 V TJ = 25°C 5 6 100 80 60 40 20 TJ = 25°C TJ = 150°C 0 7 0 8 1 2 3 4 5 6 7 8 9 11 12 13 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.25 100000 IC = 40 A 3.00 2.75 IC = 30 A 2.50 IC = 20 A 2.25 2.00 −75 −50 −25 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 120 10000 Cies 1000 100 Coes 10 0 25 50 75 100 125 150 175 200 Cres TJ = 25°C 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB30N135IHR1WG TYPICAL CHARACTERISTICS 20 TJ = 25°C 90 IF, FORWARD CURRENT (A) VGE, GATE−EMITTER VOLTAGE (V) 100 80 TJ = 150°C 70 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 18 16 14 12 10 8 6 VCE = 600 V VGE = 15 V IC = 30 A 4 2 0 0 4.0 50 100 200 150 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 2.25 250 1000 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 2.00 1.75 Eoff 1.50 1.25 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 1.00 0.75 0.50 tf 100 VCE = 600 V VGE = 15 V IC = 30 A Rg = 10 W 10 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 6 1000 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 5 SWITCHING TIME (ns) SWITCHING LOSS (mJ) td(off) Eoff 4 3 2 td(off) tf 100 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 1 0 10 5 20 35 50 65 80 5 20 35 50 65 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 80 NGTB30N135IHR1WG TYPICAL CHARACTERISTICS 10000 5.0 SWITCHING LOSS (mJ) 4.0 3.5 SWITCHING TIME (ns) VCE = 600 V VGE = 15 V TJ = 150°C IC = 30 A 4.5 3.0 2.5 Eoff 2.0 1.5 1.0 td(off) 1000 tf 100 0.5 0 10 5 15 25 35 45 55 75 65 5 25 35 45 55 65 Rg, GATE RESISTOR (W) Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg 75 85 1000 2.00 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 15 Rg, GATE RESISTOR (W) 2.25 Eoff 1.75 1.50 IC = 30 A VGE = 15 V TJ = 150°C Rg = 10 W 1.25 td(off) tf 100 1.00 IC = 30 A VGE = 15 V TJ = 150°C Rg = 10 W 10 350 400 450 500 550 600 650 700 750 350 400 450 800 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1 ms 100 100 ms IC, COLLECTOR CURRENT (A) 1000 IC, COLLECTOR CURRENT (A) VCE = 600 V VGE = 15 V TJ = 150°C IC = 30 A 50 ms dc operation 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 2 20 VGE = 15 V, TC = 150°C 100 10 1 200 2000 1 10 100 1000 10000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB30N135IHR1WG TYPICAL CHARACTERISTICS 1 R(t) (°C/W) 50% Duty Cycle RqJC = 0.548 20% 0.1 10% 5% Junction R1 2% R2 Rn Case Ri (°C/W) ti (sec) 0.0537 0.0350 0.0426 0.1183 0.1455 0.0191 0.0019 0.0090 0.0235 0.0267 0.0687 1.6573 0.01 Ci = ti/Ri C1 0.001 0.000001 0.00001 Cn Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 C2 0.0001 0.001 0.01 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance Figure 20. Test Circuit for Switching Characteristics www.onsemi.com 6 0.1 1 NGTB30N135IHR1WG Figure 21. Definition of Turn On Waveform www.onsemi.com 7 NGTB30N135IHR1WG Figure 22. Definition of Turn Off Waveform www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE D DATE 17 MAR 2017 SCALE 1:1 E E2/2 D SEATING PLANE Q 2X 2 M B A M NOTE 6 S NOTE 3 1 0.635 P A E2 NOTE 4 4 DIM A A1 b b2 b4 c D E E2 e F L L1 P Q S 3 L1 F NOTE 5 L 2X B A NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.07 1.33 1.65 2.35 2.60 3.40 0.45 0.68 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 2.655 --19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. 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