NTTFS4945N

NTTFS4945N Power MOSFET Features 30 V, 34 A, Single N−Channel, m8FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(on) MAX 9.0 mW @ 10 V 13 mW @ 4.5 V N−Channel MOSFET D (5−8) ID MAX 34 A Applications • Power Load Switch • Notebook Battery Management • Motor Control MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Current Limited by Pkg. Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms TA = 25°C PD IDM IDmaxPkg TJ, Tstg IS dV/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 11.2 8.0 2.16 15.7 11.3 4.30 7.1 5.1 0.89 34 24.4 20 102 65 −55 to +150 20 6.0 26.5 W A A °C A V/ns mJ W A W A W A Unit V V A G (4) S (1,2,3) MARKING DIAGRAM 1 WDFN8 (m8FL) CASE 511AB 4945 A Y WW G 1 S S S G 4945 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTTFS4945NTAG NTTFS4945NTWG Package Shipping† WDFN8 1500/Tape & Reel (Pb−Free) WDFN8 5000/Tape & Reel (Pb−Free) Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 23 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 1 1 Publication Order Number: NTTFS4945N/D NTTFS4945N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ 10 s) (Note 3) 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu). Symbol RqJC RqJA RqJA RqJA Value 6.3 57.8 141.2 29.1 Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) ID = 20 A ID = 10 A ID = 20 A ID = 10 A VGS = 0 V, VDS = 24 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = 250 mA 30 15 1.0 10 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 1.2 1.7 4.0 6.4 6.4 9.5 9.3 28.5 2.2 V mV/°C VGS = 10 V VGS = 4.5 V 9.0 mW 13 Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD QG(TOT) td(on) tr td(off) tf VDS = 1.5 V, ID = 15 A S 1194 VGS = 0 V, f = 1.0 MHz, VDS = 15 V 470 11 7.7 VGS = 4.5 V, VDS = 15 V, ID = 20 A 2.1 4.0 1.1 VGS = 10 V, VDS = 15 V, ID = 20 A 17.3 pF nC nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 10 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 21 16 2.0 ns 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTTFS4945N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) tf VSD tRR ta tb QRR LS LD LG RG TA = 25°C VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A TJ = 25°C TJ = 125°C VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 7.0 19 20 2.0 ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 20 A 0.81 0.73 28.5 15.2 13.3 17.7 nC ns 1.0 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance 0.38 0.054 1.3 1.1 2.0 nH W 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTTFS4945N TYPICAL CHARACTERISTICS 50 40 4V 30 3.2 V 20 10 0 3.0 V 2.8 V 2.6 V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 48 44 ID, DRAIN CURRENT (A) 40 36 32 28 24 20 16 12 8 4 0 0.5 TJ = 25°C VGS = 10 V 4.5 V TJ = 25°C 3.6 V 3.4 V VDS ≥ 10 V ID, DRAIN CURRENT (A) TJ = 125°C TJ = −55°C 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.060 0.050 0.040 0.030 0.020 0.010 0.000 ID = 20 A TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 10 Figure 2. Transfer Characteristics TJ = 25°C VGS = 4.5 V VGS = 10 V 2 3 4 5 6 VGS (V) 7 8 9 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS 2.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 ID = 20 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C TJ = 125°C 100 TJ = 85°C 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 NTTFS4945N TYPICAL CHARACTERISTICS 1400 VGS, GATE−TO−SOURCE VOLTAGE (V) 1200 C, CAPACITANCE (pF) 1000 800 600 400 200 0 0 5 10 Crss 15 20 25 30 Coss Ciss VGS = 0 V TJ = 25°C 12 11 10 9 8 7 6 5 4 3 2 1 0 Qgs Qgd VDD = 15 V VGS = 10 V ID = 20 A 10 15 20 TJ = 25°C QT QT 0 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) VDD = 15 V ID = 15 A VGS = 10 V 100 t, TIME (ns) td(off) tf tr 10 td(on) 30 25 20 15 10 5 0 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = 0 V TJ = 125°C TJ = 25°C 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1.0 1 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 100 10 1 0.1 VGS = 20 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 ms 100 ms 1 ms 10 ms dc 30 25 20 15 10 5 0 Figure 10. Diode Forward Voltage vs. Current ID = 23 A ID, DRAIN CURRENT (A) 0.01 0.01 100 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTTFS4945N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% 10 R(t) (°C/W) 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 1 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) 0.1 1 10 100 1000 Figure 13. Thermal Response http://onsemi.com 6 NTTFS4945N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB−01 ISSUE B 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X 0.20 C D D1 8765 A B 0.20 C E1 E 4X q 1234 TOP VIEW 0.10 C A 0.10 C SIDE VIEW 8X b CAB c A1 6X C SEATING PLANE e DETAIL A DETAIL A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.65 BSC 0.30 0.41 0.51 0.64 −−− −−− 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.026 BSC 0.012 0.016 0.025 −−− 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 −−− 0.022 0.008 0.063 12 _ SOLDERING FOOTPRINT* e/2 1 4 0.10 0.05 c L 0.42 K PACKAGE OUTLINE 8X 0.65 PITCH 0.66 4X E2 8 5 M D2 BOTTOM VIEW L1 0.75 0.57 2.30 3.60 G 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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