NTTFS4945NTWG

NTTFS4945N Power MOSFET 30 V, 34 A, Single N−Channel, m8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications http://onsemi.com V(BR)DSS RDS(on) MAX 9.0 mW @ 10 V 30 V • Power Load Switch • Notebook Battery Management • Motor Control N−Channel MOSFET Parameter Symbol D (5−8) Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 11.2 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.16 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 15.7 A Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C PD 4.30 W TA = 25°C ID 7.1 A TA = 85°C 11.3 TA = 85°C 5.1 TA = 25°C PD 0.89 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 34 A Power Dissipation RqJC (Note 1) TC = 25°C PD 20 W TA = 25°C, tp = 10 ms IDM 102 A TJ, Tstg −55 to +150 °C IS 20 A TC = 85°C Operating Junction and Storage Temperature Source Current (Body Diode) S (1,2,3) MARKING DIAGRAM 1 S S S G 1 Power Dissipation RqJA (Note 2) Pulsed Drain Current G (4) 8.0 TA = 85°C Steady State 34 A 13 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Continuous Drain Current RqJA (Note 2) ID MAX 24.4 WDFN8 (m8FL) CASE 511AB 4945 A Y WW G 4945 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTTFS4945NTAG WDFN8 1500/Tape & Reel (Pb−Free) WDFN8 5000/Tape & Reel (Pb−Free) Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 23 Apk, L = 0.1 mH, RG = 25 W) EAS 26.5 mJ NTTFS4945NTWG TL 260 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 2 1 Publication Order Number: NTTFS4945N/D NTTFS4945N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 6.3 °C/W Junction−to−Ambient – Steady State (Note 3) RqJA 57.8 Junction−to−Ambient – Steady State (Note 4) RqJA 141.2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 29.1 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 15 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) gFS 1.7 4.0 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 ID = 20 A 6.4 ID = 10 A 6.4 ID = 20 A 9.5 ID = 10 A 9.3 VDS = 1.5 V, ID = 15 A mV/°C 9.0 mW 13 28.5 S 1194 pF CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 11 Total Gate Charge QG(TOT) 7.7 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V, ID = 20 A 470 nC 2.1 4.0 1.1 VGS = 10 V, VDS = 15 V, ID = 20 A 17.3 nC 10 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 21 16 2.0 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTTFS4945N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 7.0 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 19 20 2.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.81 TJ = 125°C 0.73 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 1.0 ns 28.5 VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A V 15.2 13.3 QRR 17.7 nC Source Inductance LS 0.38 nH Drain Inductance LD Gate Inductance LG Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 0.054 1.3 1.1 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 2.0 W NTTFS4945N TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 40 3.6 V TJ = 25°C 4.5 V 48 44 3.4 V 4V 30 3.2 V 20 3.0 V 10 2.8 V 2.6 V 0 0.5 1 2 1.5 2.5 3 3.5 4 5 4.5 24 20 8 4 0 0.5 0.040 0.030 0.020 0.010 TJ = −55°C 1 1.5 2 2.5 3 4 4.5 70 80 3.5 3 4 5 6 7 8 9 VGS (V) 10 0.016 TJ = 25°C 0.014 0.012 0.010 VGS = 4.5 V 0.008 0.006 VGS = 10 V 0.004 0.002 0.000 10 30 20 40 50 60 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 2.0 ID = 20 A VGS = 10 V VGS = 0 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 125°C Figure 2. Transfer Characteristics 0.050 1.8 TJ = 25°C 16 12 Figure 1. On−Region Characteristics ID = 20 A TJ = 25°C 2 32 28 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.060 0.000 VDS ≥ 10 V 40 36 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = 10 V ID, DRAIN CURRENT (A) 50 1.6 1.4 1.2 1 1000 TJ = 125°C 100 TJ = 85°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTTFS4945N TYPICAL CHARACTERISTICS Ciss C, CAPACITANCE (pF) 1200 1000 VGS = 0 V TJ = 25°C 800 600 Coss 400 200 0 Crss 0 5 10 15 20 25 30 VGS, GATE−TO−SOURCE VOLTAGE (V) 1400 QT 7 6 5 4 3 2 1 0 Qgs QT 0 5 10 15 20 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 30 IS, SOURCE CURRENT (A) td(off) tf tr 10 td(on) 1 10 RG, GATE RESISTANCE (W) 100 VGS = 0 V 25 20 TJ = 125°C 15 10 5 0 TJ = 25°C 0.4 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1.0 Figure 10. Diode Forward Voltage vs. Current 30 100 10 ms 10 100 ms 1 ms 10 ms VGS = 20 V Single Pulse TC = 25°C 1 dc RDS(on) Limit Thermal Limit Package Limit 0.01 0.01 0.1 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 1000 ID, DRAIN CURRENT (A) VDD = 15 V VGS = 10 V ID = 20 A Figure 7. Capacitance Variation 100 0.1 Qgd Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V t, TIME (ns) TJ = 25°C 10 9 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 12 11 100 ID = 23 A 25 20 15 10 5 0 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTTFS4945N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 6 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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