NTTFS4C08NTAG

NTTFS4C08N MOSFET – Power, Single, N-Channel, m8FL 30 V, 52 A Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX 5.9 mW @ 10 V 30 V 52 A 9.0 mW @ 4.5 V Applications • DC−DC Converters • Power Load Switch • Notebook Battery Management N−Channel MOSFET D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Symbol Value Unit VDSS 30 V VGS ±20 V ID 15 A TA = 85°C S (1,2,3) 10.8 PD 2.13 MARKING DIAGRAM W 1 ID TA = 85°C Steady State A 21 15 TA = 25°C PD 4.2 W TA = 25°C ID 9.3 A TA = 85°C 6.7 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.82 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 52 A Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current G (4) TC = 85°C PD 25.5 W 144 A TJ, Tstg −55 to +150 °C IS 23 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 29 Apk, L = 0.1 mH, RG = 25 W) (Note 3) EAS 42 mJ TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4C08 A Y WW G 4C08 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 37.5 IDM TA = 25°C, tp = 10 ms WDFN8 (m8FL) CASE 511AB 1 S S S G ORDERING INFORMATION Device Package Shipping† NTTFS4C08NTAG WDFN8 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2015 June, 2019 − Rev. 3 1 Publication Order Number: NTTFS4C08N/D NTTFS4C08N 3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 21 A, EAS = 22 mJ. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Junction−to−Case (Drain) RqJC 4.9 Junction−to−Ambient – Steady State (Note 4) RqJA 58.8 Junction−to−Ambient – Steady State (Note 5) RqJA 153 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 30 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 12.6 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 13.8 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance 1.3 VGS(TH)/TJ RDS(on) 5.0 mV/°C VGS = 10 V ID = 30 A 4.7 5.9 VGS = 4.5 V ID = 18 A 7.2 9.0 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A Gate Resistance RG TA = 25°C 42 0.3 1.0 mW S 2.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1113 VGS = 0 V, f = 1 MHz, VDS = 15 V 702 pF 39 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 8.4 15 Threshold Gate Charge QG(TH) 1.8 3.5 Gate−to−Source Charge QGS 3.5 7.0 Gate−to−Drain Charge QGD 3.3 6.0 Gate Plateau Voltage VGP 3.4 7.0 V 18.2 35 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 0.035 nC NTTFS4C08N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 9.0 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 33 tf 4.0 td(ON) 7.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf ns 15 26 ns 19 3.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.79 TJ = 125°C 0.66 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 28.3 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 14.5 13.8 15.3 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 ns nC NTTFS4C08N TYPICAL CHARACTERISTICS 5.5 V − 10 V ID, DRAIN CURRENT (A) 80 3.8 V 70 60 3.6 V 50 3.4 V 40 3.2 V 30 3.0 V 20 0 2.8 V 60 50 40 30 0.5 1 1.5 2 2.5 TJ = 25°C 10 0 3 0 2 2.5 3 3.5 4 4.5 Figure 2. Transfer Characteristics ID = 30 A 0.014 0.012 0.010 0.008 0.006 0.004 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 5 0.010 TJ = 25°C 0.009 0.008 VGS = 4.5 V 0.007 0.006 VGS = 10 V 0.005 0.004 0.003 0.002 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 1.7 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.5 Figure 1. On−Region Characteristics 0.016 1.5 1 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.018 1.6 0.5 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.020 0.002 3.0 TJ = 125°C 20 TJ = 25°C 0 VDS = 3 V 70 4V 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 80 4.2 V 4.5 V ID, DRAIN CURRENT (A) 90 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 100 1.4 1.3 1.2 1.1 1 0.9 TJ = 150°C TJ = 125°C 1000 TJ = 85°C 100 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTTFS4C08N 1800 VGS = 0 V TJ = 25°C 1600 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 1400 Ciss 1200 1000 Coss 800 600 400 200 0 Crss 0 5 10 15 20 25 30 0 TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A Qgs 2 0 2 4 6 8 10 12 14 16 18 20 20 tr td(off) 10 VGS = 0 V 18 IS, SOURCE CURRENT (A) t, TIME (ns) Qgd Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge td(on) tf 16 14 12 10 8 6 TJ = 125°C 4 TJ = 25°C 2 1 10 100 0 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 10 ms 10 100 ms 1 ms 0 V < VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.01 0.01 0.1 10 ms dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 1000 ID, DRAIN CURRENT (A) 4 Figure 7. Capacitance Variation 100 0.1 6 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V 1 QT 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 100 22 ID = 20 A 20 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 1.0 15 NTTFS4C08N TYPICAL CHARACTERISTICS 1000 R(t) (°C/W) 100 Duty Cycle = 50% 20% 10 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 100 80 ID, DRAIN CURRENT (A) 70 60 GFS (S) 50 40 30 20 TA = 25°C TA = 85°C 10 10 0 0 5 1 1.0E−08 10 15 20 25 30 35 40 45 50 55 60 65 70 1.0E−07 1.0E−06 1.0E−05 1.0E−04 1.E−03 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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