NVD5805NT4G

NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com RDS(on) MAX V(BR)DSS 16 mW @ 5.0 V 40 V 51 A 9.5 mW @ 10 V D Applications • • • • ID MAX LED Backlight Driver CCFL Backlight DC Motor Control Power Supply Secondary Side Synchronous Rectification N−Channel G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 4 Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous VGS ±20 V 3 Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) VGS ±30 V ID 51 A DPAK CASE 369C (Surface Mount) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) TC = 25°C Steady State Pulsed Drain Current TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 40 A, L = 0.1 mH, VDS = 40 V) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 36 PD 47 W IDM 85 A TJ, Tstg −55 to 175 °C IS 30 A EAS 80 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit °C/W Junction−to−Case (Drain) RqJC 3.2 Junction−to−Ambient − Steady State (Note 1) RqJA 107 1 2 4 Drain AYWW 58 05NG Parameter 2 1 Drain 3 Gate Source A Y WW 5805N G = Assembly Location* = Year = Work Week = Device Code = Pb−Free Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. 1. Surface−mounted on FR4 board using the minimum recommended pad size. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 April, 2017 − Rev. 6 1 Publication Order Number: NTD5805N/D NTD5805N, NVD5805N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current 40.8 IDSS Gate−to−Source Leakage Current V VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 1.0 TJ = 150°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 3.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance 1.5 7.04 RDS(on) gFS mV/°C VGS = 10 V, ID = 15 A 7.6 9.5 mW VGS = 5.0 V, ID = 10 A 10.9 16 VDS = 15 V, ID = 15 A 8.54 S 1725 pF CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 220 160 Total Gate Charge QG(TOT) 33 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 9.8 td(on) 10.2 VGS = 10 V, VDS = 32 V, ID = 30 A 80 nC 2.0 7.2 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5 W tf ns 17.9 22.9 4.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.83 TJ = 150°C 0.65 tRR ta tb 24.8 VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A QRR 1.2 V ns 14.6 10.2 15.5 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTD5805N, NVD5805N TYPICAL PERFORMANCE CHARACTERISTICS 5.0 V 70 VGS = 7 V − 5.5 V 60 50 40 4.5 V 30 4.0 V 20 10 3.5 V 0 0.5 1 1.5 2 2.5 50 TJ = 100°C 25 TJ = 25°C TJ = −55°C 2 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 0.019 0.017 0.015 0.013 0.011 0.009 4 5 6 7 9 8 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.05 TJ = 25°C 0.04 0.03 VGS = 5 V 0.02 0.01 VGS = 10 V 0 10 15 20 25 30 35 40 45 50 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.9 1.8 1.7 1.6 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.021 0.007 75 0 3 VGS = 0 V ID = 51 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V 5.2 V 80 TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 100 10 V 90 ID, DRAIN CURRENT (A) 100 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 100 10 175 TJ = 150°C 1000 TJ = 100°C 2 12 22 32 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 42 NTD5805N, NVD5805N TYPICAL PERFORMANCE CHARACTERISTICS Ciss 2000 20 40 15 30 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C VDS QT 10 1000 Coss 0 10 5 Vgs Crss 0 5 10 Vds 15 20 25 30 35 40 Qgs Qgd 10 ID = 30 A TJ = 25°C 10 0 30 0 40 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) 30 VDD = 32 V ID = 30 A VGS = 10 V td(off) tf tr 100 td(on) 10 1 10 VGS = 0 V TJ = 25°C 20 10 0 100 0.4 0.6 0.5 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 20 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 1 20 VGS 5 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3000 100 10 ms 100 ms 10 1 0.1 0.1 VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 1 ms 10 ms dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 1.0 NTD5805N, NVD5805N r(t), Effective Transient Thermal Resistance (°C/W) TYPICAL PERFORMANCE CHARACTERISTICS 10 D = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (s) Figure 12. Thermal Response ORDERING INFORMATION Package Shipping† NTD5805NT4G DPAK (Pb−Free) 2500 / Tape & Reel NVD5805NT4G* DPAK (Pb−Free) 2500 / Tape & Reel NVD5805NT4G−VF01 DPAK (Pb−Free) 2500 / Tape & Reel Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 5 NTD5805N, NVD5805N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F A E b3 c2 4 L3 Z D 1 L4 C A B 2 NOTE 7 c SIDE VIEW b TOP VIEW H DETAIL A 3 b2 e 0.005 (0.13) M GAUGE PLANE C Z C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW H L2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD5805N/D