NVTFS5C466NLTAG

NVTFS5C466NL MOSFET - Power, Single N-Channel 40 V, 7.3 mW, 51 A Features • • • • • • Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C466NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX 7.3 m @ 10 V 40 V 12 m @ 4.5 V 51 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 51 A Continuous Drain Current RJC (Notes 1, 2, 3, 4) TC = 25°C Power Dissipation RJC (Notes 1, 2, 3) Continuous Drain Current RJA (Notes 1, 3, 4) Steady State TC = 100°C TC = 25°C Pulsed Drain Current PD Steady State S (1, 2, 3) 19 ID A 14 TA = 100°C TA = 25°C G (4) W 38 TC = 100°C TA = 25°C Power Dissipation RJA (Notes 1, 3) 36 MARKING DIAGRAM 12 PD W 3.1 TA = 100°C 1.5 IDM 214 A TJ, Tstg −55 to +175 °C IS 31.3 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 3 A) EAS 72 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C TA = 25°C, tp = 10 s Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter N−Channel D (5 − 8) Symbol Value Unit Junction−to−Case − Steady State (Note 3) RJC 4.0 °C/W Junction−to−Ambient − Steady State (Note 3) RJA 48 1 WDFN8 (m8FL) CASE 511AB XXXX A Y WW G 1 S S S G XXXX AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 6 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi () is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev. 4 1 Publication Order Number: NVTFS5C466NL/D NVTFS5C466NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 A 40 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 29 VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 30 A Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 10 A A 100 nA 2.2 V 6.1 7.3 m 12 ON CHARACTERISTICS (Note 5) 1.2 VGS = 4.5 V, ID = 10 A 9.7 gFS VDS = 15 V, ID = 25 A 33 S Input Capacitance Ciss 880 pF Output Capacitance Coss VGS = 0 V, f = 1.0 MHz, VDS = 25 V Reverse Transfer Capacitance Crss 16 Total Gate Charge QG(TOT) 7.0 nC Threshold Gate Charge QG(TH) 1.8 nC Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Forward Transconductance CHARGES AND CAPACITANCES Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V, ID = 25 A 340 3.3 2.5 VGS = 10 V, VDS = 32 V, ID = 25 A 16 nC td(on) 10 ns tr 67 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = 4.5 V, VDS = 32 V, ID = 25 A, RG = 2.5  tf 26 32 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A TJ = 25°C 0.9 TJ = 125°C 0.8 22 VGS = 0 V, dlS/dt = 100 A/s, IS = 25 A QRR 1.2 V ns 10 12 6.0 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVTFS5C466NL TYPICAL CHARACTERISTICS 100 VGS = 10 to 5 V ID, DRAIN CURRENT (A) 50 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 10 70 60 50 40 30 TJ = 25°C 20 0.5 1.0 1.5 2.0 2.5 0 3.0 0 2 1 TJ = −55°C 3 4 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 20 15 10 5 4 5 6 7 8 9 10 12 TJ = 25°C 11 6 5 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 25 A TJ = 25°C 3 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 0 25 0 80 10 VGS = 4.5 V 10 9 8 7 VGS = 10 V 6 5 4 10 15 20 25 30 40 35 45 50 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.1 2.0 ID = 25 A 1.9 V GS = 10 V 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 −50 −25 0 100K TJ = 150°C 10K IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 0 VDS = 10 V 90 4.5 V 60 ID, DRAIN CURRENT (A) 70 TJ = 125°C 1K TJ = 85°C 100 TJ = 25°C 10 25 50 75 100 125 150 1 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVTFS5C466NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10K Ciss 1K Coss 100 Crss 10 1 TJ = 25°C VGS = 0 V f = 1 MHz 0 5 15 10 20 25 30 35 40 5 Qgs 4 td(off) 3 VDS = 32 V ID = 25 A TJ = 25°C 2 1 0 0 2 4 6 8 10 12 14 td(on) VGS = 4.5 V VDS = 32 V ID = 25 A 1 10 TJ = 125°C 1 0.1 100 16 VGS = 0 V TJ = 25°C 0.3 0.4 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 Single Pulse VGS ≤ 10 V TC = 25°C TJ(initial) = 25°C IPEAK (A) 10 10 1 0.1 Qgd Figure 8. Gate−to−Source vs. Total Charge IS, SOURCE CURRENT (A) t, TIME (ns) 6 Figure 7. Capacitance Variation tr 10 ID, DRAIN CURRENT (A) 7 Qg, TOTAL GATE CHARGE (nC) tf 100 8 10 100 1000 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 10 s 0.5 ms 1 ms 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 TJ(initial) = 100°C 1 0.1 0.00001 100 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVTFS5C466NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response www.onsemi.com 5 1 10 100 1000 NVTFS5C466NL DEVICE ORDERING INFORMATION Marking Package Shipping† NVTFS5C466NLTAG 466L WDFN8 (Pb−Free) 1500 / Tape & Reel NVTFS5C466NLWFTAG 66LW WDFN8 (Pb−Free) 1500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative