NVTFS5C658NLTAG

NVTFS5C658NL Power MOSFET 60 V, 5.0 mW, 109 A, Single N−Channel Features • • • • • • Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX 5.0 mW @ 10 V 60 V 7.3 mW @ 4.5 V 109 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage Parameter VDSS 60 V Gate−to−Source Voltage VGS ±20 V ID 109 A Continuous Drain Current RqJC (Notes 1, 2, 3, 4) Power Dissipation RqJC (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1 & 3, 4) Power Dissipation RqJA (Notes 1, 3) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C Steady State S (1, 2, 3) 57 ID A 18 TA = 100°C TA = 25°C W 114 TC = 100°C TA = 25°C G (4) 77 PD PD W 3.2 2.2 IDM 440 A TJ, Tstg −55 to +175 °C IS 127 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5.0 A) EAS 142 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter MARKING DIAGRAM 15 TA = 100°C TA = 25°C, tp = 10 ms N−Channel D (5 − 8) Symbol Value Unit Junction−to−Case − Steady State (Note 3) RqJC 1.3 °C/W Junction−to−Ambient − Steady State (Note 3) RqJA 47 1 WDFN8 (m8FL) CASE 511AB XXXX A Y WW G 1 S S S G XXXX AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 March, 2018 − Rev. 1 1 Publication Order Number: NVTFS5C658NL/D NVTFS5C658NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 60 V V TJ = 25°C 10 TJ = 125°C 250 100 mA IGSS VDS = 0 V, VGS = 20 V nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 75 mA 2.2 V Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 50 A 4.2 5.0 mW VGS = 4.5 V, ID = 50 A 5.8 7.3 gFS VDS = 15 V, ID = 50 A 100 S Input Capacitance Ciss 1935 pF Output Capacitance Coss VGS = 0 V, f = 1.0 MHz, VDS = 25 V Reverse Transfer Capacitance Crss 16 Total Gate Charge QG(TOT) 12 nC Threshold Gate Charge QG(TH) 3.5 nC Gate−to−Source Charge QGS Gate−to−Drain Charge QGD ON CHARACTERISTICS (Note 5) Forward Transconductance 1.2 CHARGES AND CAPACITANCES Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V, ID = 50 A 890 7 2.4 VGS = 10 V, VDS = 48 V, ID = 50 A 27 nC 16 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 48 V, ID = 50 A tf 96 36 105 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.9 TJ = 125°C 0.8 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 39 VGS = 0 V, dlS/dt = 100 A/ms, IS = 50 A QRR www.onsemi.com 2 V ns 21 18 15 5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. 1.2 nC NVTFS5C658NL TYPICAL CHARACTERISTICS 100 10 V to 4.5 V ID, DRAIN CURRENT (A) 3.4 V 60 3.2 V 50 40 3.0 V 30 20 2.8 V 10 2.6 V 0 0.5 1.0 1.5 2.0 80 70 60 50 40 TJ = 25°C 30 20 10 0 2.5 TJ = 125°C 0 1.5 2.0 2.5 3.0 3.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 9 8 7 6 5 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE VOLTAGE (V) 4.0 10 TJ = 25°C 9 8 7 VGS = 4.5 V 6 5 VGS = 10 V 4 3 2 20 30 40 60 50 70 80 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 100000 VGS = 10 V ID = 50 A TJ = 175°C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 50 A 1.8 0.5 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 4 3.0 VDS = 5 V 90 80 70 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 100 3.6 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 90 1.6 1.4 1.2 1.0 10000 1000 TJ = 125°C 100 TJ = 85°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 10 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 60 NVTFS5C658NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10000 1000 COSS 100 CRSS 10 0 1000 20 30 40 50 60 1 10 4 QGD QGS 3 VDS = 48 V ID = 50 A TJ = 25°C 2 1 0 0 2 4 6 8 10 12 14 16 18 20 10 1 100 TJ = 125°C 0.3 0.4 TJ = 25°C 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) 5 100 td(on) 100 100 10 0.1 0.1 6 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge tr 1 7 Figure 7. Capacitance Variation td(off) 1 8 QG, TOTAL GATE CHARGE (nC) tf 10 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 4.5 V VDS = 48 V ID = 50 A 100 t, TIME (ns) 10 IS, SOURCE CURRENT (A) 1 VGS = 0 V TJ = 25°C f = 1 MHz VGS ≤ 10 V Single Pulse TC = 25°C 10 ms 0.5 ms RDS(on) Limit Thermal Limit Package Limit 1 1 ms IPEAK, DRAIN CURRENT (A) C, CAPACITANCE (pF) CISS 10 TJ(initial) = 25°C 10 TJ(initial) = 100°C 1 10 ms 10 0.1 0.00001 100 0.0001 0.001 0.01 VDS (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVTFS5C658NL TYPICAL CHARACTERISTICS 100 R(t) (°C/W) 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Marking Package Shipping† NVTFS5C658NLTAG 658L WDFN8 (Pb−Free) 1500 / Tape & Reel NVTFS5C658NLWFTAG 58LW WDFN8 (Pb−Free) 1500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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