SGF5N150UFTU

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. SGF5N150UF General Description Features Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the Switching Power Supply applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impedance Application Switching Power Supply - High Input Voltage Off-line Converter C G TO-3PF E G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGF5N150UF 1500 ± 20 10 5 20 62.5 25 -55 to +150 -55 to +150 Units V V A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2003 Fairchild Semiconductor Corporation Typ. --- Max. 2.0 40 Units °C/W °C/W SGF5N150UF Rev. B SGF5N150UF IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1500 --- ---- -1.0 ± 100 V mA nA IC = 5mA, VCE = VGE 2.0 3.0 4.0 V IC = 5A, VGE = 10V -- 4.7 5.5 V VCE = 10V, VGE = 0V, f = 1MHz ---- 780 130 70 ---- pF pF pF ----------- 10 15 30 70 190 100 290 30 3 15 --50 120 --580 45 5 25 ns ns ns ns uJ uJ uJ nC nC nC Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2003 Fairchild Semiconductor Corporation VCC = 600 V IC = 5A RG =10Ω VGE = 10V Inductive Load TC = 25°C VCE = 600 V, IC = 5A VGE = 10V SGF5N150UF Rev. B SGF5N150UF Electrical Characteristics of IGBT SGF5N150UF 80 20 V Vge=10V 50 70 15 V 60 Tc = 100℃ 50 10 V Ic [A] Ic [A] Tc = 25℃ 40 40 30 30 20 20 10 10 Vge=5 V 0 0 0 5 10 15 0 20 4 8 12 16 20 Vce [V] Vce [V] Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 8.0 12 Vge = 10V Vge=10V 7.5 10 7.0 8 Vce(sat) [V] Ic [A] 6.5 6 Ic =10A 6.0 5.5 4 5.0 Ic = 5A 2 4.5 0 4.0 25 50 75 100 125 20 150 40 60 Tc [℃] Fig 3. Maximum Collector Current vs. Case Temperature 100 140 10 Vcc = 600V Load Current : peak of square wave T h e rm a l R e s p o n se [Z th jc ] 8 6 4 2 0 .5 1 0 .2 0 .1 0 .0 5 Pdm 0 .1 0 .0 2 t1 0 .0 1 t2 Duty cycle : 50% o Tc = 100 C Power Dissipation = 12W 1 10 100 Frequency [kHz] Fig 5. Load Current vs. Frequency ©2003 Fairchild Semiconductor Corporation Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC s in g le p u ls e 0 0.1 120 Fig 4. Saturation Voltage vs. Case Temperature 10 Load Current [A] 80 Tc [℃] 1000 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c ta n g u la r P u ls e D u ra tio n [s e c] Fig 6. Transient Thermal Impedance of IGBT Junction to Case SGF5N150UF Rev. B SGF5N150UF 1200 Common Emitter RL = 120Ω, VCC = 600V 10 o 1000 Capacitance [pF] Gate - Emitter Voltage, V Cies 800 600 400 200 Coes Cres 0 1 8 GE [V] TC = 25 C 6 4 2 0 10 0 10 Fig 7. Typical Capacitance vs. Collector to Emitter Voltage 30 Fig 8. Typical Gate Charge Characteristic 1200 600 Vcc = 600V Ic = 5A Vcc = 600V Rg = 10Ω Vge = 10V Esw 500 Ic = 10A 1000 400 Energy [uJ] Energy [uJ] 20 Gate Charge, Qg [nC] Vce [V] Eon 300 800 Ic = 5A 600 Ic = 3A 400 200 Eoff 200 100 0 5 10 15 20 25 20 30 40 60 80 100 Tc [℃] Rg [Ω ] Fig 10. Typical Switching Loss vs. Case Temperature Fig 9. Typical Switching Loss vs. Gate Resistance 1.2 Vcc = 600V Rg = 10Ω Tc = 100℃ Esw 1.0 10 Ic [A] Energy [mJ] 0.8 Eon 0.6 Eoff 0.4 Safe Operating Area Vge = 20V, Tc = 100℃ 0.2 1 4 6 8 Ic [A] Fig 11. Typical Switching Loss vs. Collector Current ©2003 Fairchild Semiconductor Corporation 10 1 10 100 1000 Vce [V] Fig 12. Turn-Off SOA SGF5N150UF Rev. B SGF5N150UF Package Dimension TO-3PF (FS PKG CODE AG) 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 2.00 ±0.20 2.00 ±0.20 22.00 ±0.20 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 0.85 ±0.03 23.00 ±0.20 10 ° 10.00 ±0.20 (1.50) 2.00 ±0.20 14.50 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation SGF5N150UF Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ Across the board. Around the world™ The Power Franchise™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. 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