BCR8CS

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8CS OUTLINE DRAWING Dimensions in mm 4 1.5 MAX 10.5 MAX 4.5 1.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME ∗ 3.0 –0.5 +0.3 0 –0 +0.3 VOLTAGE CLASS 1 5 0.8 0.5 123 24 2.6±0.4 4.5 ∗ Measurement point of case temperature • IT (RMS) ........................................................................ 8A • VDRM ..............................................................400V/600V • IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5 APPLICATION Solid state relay, hybrid IC 1 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220S MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc =105°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 8 80 26 5 0.5 10 2 –40 ~ +125 –40 ~ +125 1.2 Unit A A A2s W W V A °C °C g V1. Gate open. Feb.1999 (1.5) MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case V4 Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, ITM=12A, Instantaneous measurement Limits Min. — — — — — — — — 0.2 — V3 Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 30 V 5 30 V 5 30 V 5 — 2.0 — Unit mA V V V V mA mA mA V °C/ W V/µ s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance Rth (c-f) is 1.0°C/W. V5. High sensitivity (I GT≤20mA) is also available. (IGT item 1 ) (dv/dt) c Symbol R 8 400 L 10 V/µ s R 12 600 L 10 — Min. — 1. Junction temperature Tj =125° C 2. Rate of decay of on-state commutating current (di/dt)c=–4A/ms 3. Peak off-state voltage VD =400V Unit Test conditions Voltage class VDRM (V) Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 RATED SURGE ON-STATE CURRENT 100 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 7 5 3 2 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 Tj = 125°C 101 7 5 3 2 100 7 5 3 2 Tj = 25°C 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS 100 (%) 3 2 GATE VOLTAGE (V) 101 7 5 3 2 100 7 5 3 2 IFGT I IRGT I, IRGT III 10–1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) VGM = 10V PG(AV) = 0.5W PGM = 5W IGM = 2A VGT = 1.5V GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 103 7 5 4 3 2 102 7 5 4 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE IRGT III IRGT I IFGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 2 3 5 7 103 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25°C) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) 16 CASE TEMPERATURE (°C) 14 12 360° CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 160 140 120 100 80 60 ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (°C) 100 80 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 0 2 4 6 120 120 t2.3 100 100 t2.3 60 60 t2.3 AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE COPPER AND ALUMINUM 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 8 10 12 14 16 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 103 7 5 4 3 2 102 7 5 4 3 2 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25°C) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT (mA) 100 –40 T2 , G  TYPICAL  – T2 , G–  EXAMPLE + + 0 40 80 120 160 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25°C) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION + T2 , G– TYPICAL EXAMPLE Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 160 140 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE TYPICAL EXAMPLE Tj = 125°C COMMUTATION CHARACTERISTICS 3 TYPICAL 2 EXAMPLE 102 Tj = 125°C 7 IT = 4A 5 τ = 500µs 3 VD = 200V 2 f = 3Hz VOLTAGE WAVEFORM BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) (dv/dt)C t VD 120 100 80 60 40 20 I QUADRANT III QUADRANT CURRENT WAVEFORM (di/dt)C IT τ t 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 101 7 I QUADRANT 5 3 MINIMUM 2 CHARAC100 TERISTICS III QUADRANT 7 VALUE 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 100 (%) TYPICAL EXAMPLE IFGT I IRGT I IRGT III GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 6V V A RG 6V V A RG TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3 Feb.1999