| 1 | 2SB805 | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):700mA;功率(Pd):2W;集电极截止电流(Icbo):100nA;集电极-发射极... | 下载 | Taiwan shike Electronics co.,ltd |
| 2 | 2SA2013-TD-E | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):4A;功率(Pd):1.3W;集电极截止电流(Icbo):1uA;集电极-发射极饱和电压... | 下载 | Murata Manufacturing Co., Ltd. |
| 3 | 2SC3646S-TD-E | 晶体管类型:NPN;集射极击穿电压(Vceo):100V;集电极电流(Ic):1A;功率(Pd):500mW;直流电流增益(hFE@Ic,Vce):100@100m... | 下载 | Murata Manufacturing Co., Ltd. |
| 4 | 2SA2202-TD-E | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):2A;功率(Pd):3.5W;直流电流增益(hFE@Ic,Vce):200@100mA... | 下载 | Murata Manufacturing Co., Ltd. |
| 5 | 2SD965A-R-T89R | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):5A;功率(Pd):750mW;直流电流增益(hFE@Ic,Vce):230@500mA... | 下载 | PSI |
| 6 | 2SK2615 | | 下载 | Tech Public Electronics Co.,Ltd. |
| 7 | 2N7002--HAMR | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):300mA;功率(Pd):830mW;导通电阻(RDS(on)@Vgs,Id):2.8Ω@10V,... | 下载 | Rubycon Corporation |
| 8 | 2N7002NXBKR | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):270mA；330mA;功率(Pd):310mW；1.67W;导通电阻(RDS(on)@Vgs,I... | 下载 | Rubycon Corporation |
| 9 | 2SA1036KFRAT146R | 晶体管类型:PNP;集射极击穿电压(Vceo):32V;集电极电流(Ic):500mA;功率(Pd):200mW;集电极截止电流(Icbo):1μA;集电极-发射极... | 下载 | Rohm Semiconductor |
| 10 | 2SA1037AKFRAT146R | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):150mA;功率(Pd):200mW;集电极截止电流(Icbo):100nA;集电极-发... | 下载 | Rohm Semiconductor |
| 11 | 2SJ168-VB | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):500mA;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):3Ω@10V,0.5A;阈... | 下载 | VBsemi Electronics Co. Ltd |
| 12 | 2PD601ARL,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):210@2m... | 下载 | Rubycon Corporation |
| 13 | 2PD601ART,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):210@2m... | 下载 | Rubycon Corporation |
| 14 | 2N7002KB-VB | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):250mA;功率(Pd):300mW;导通电阻(RDS(on)@Vgs,Id):3.3Ω@10V,... | 下载 | VBsemi Electronics Co. Ltd |
| 15 | 2N7002K | | 下载 | PSI |
| 16 | 2N7002LT7G | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):115mA;功率(Pd):225mW;导通电阻(RDS(on)@Vgs,Id):7.5Ω@500m... | 下载 | Murata Manufacturing Co., Ltd. |
| 17 | 2341 | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-; | 下载 | Shenzhen Tuofeng Semiconductor Technology Co., Ltd. |
| 18 | 2PD602AQL,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):85@150... | 下载 | Rubycon Corporation |
| 19 | 2SJ621-T1B-AT | MOSFET P-CH 12V SC-96 SOT-23 | 下载 | Renesas Electronics America |
| 20 | 2SC380TM-Y | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):50mA;功率(Pd):300mW;集电极截止电流(Icbo):100nA;集电极-发射... | 下载 | Foshan Blue Rocket Electronics Co., Ltd. |
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