| 1 | PZT5551-TP | - | 下载 | Micro Commercial Components |
| 2 | PHD55N03LT-VB | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):80A;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,80A; | 下载 | VBsemi Electronics Co. Ltd |
| 3 | PJ-320F | | 下载 | Haoyu (Hongkong) Co., Ltd. |
| 4 | PM254-2-05-W-8.5 | 间距:2.54mm;总孔位数:10;排数:2;插孔结构:2x5P;行距:2.54mm;安装类型:弯插;圆孔/方孔:方孔;额定电流:3A;额定电压:-;插孔方向:侧面... | 下载 | Huacan Tianlu Electronics |
| 5 | PWR013216(1206)L2R00FTU | 贴片电阻 1206 2Ω ±1% 1/2W | 下载 | Shenzhen Meilong Electronic Co.,Ltd. |
| 6 | PSMN7R6-100BSEJ | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):75A;功率(Pd):296W;导通电阻(RDS(on)@Vgs,Id):7.6mΩ@25A,1... | 下载 | Rubycon Corporation |
| 7 | PTY80N06 | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;... | 下载 | ShenZhen Puolop Electronics co.,LTD. |
| 8 | PPT89T30V5AE2M | 通用三极管 PNP Ic=5A Vceo=20V hfe=100~400 P=3W SOT89-3L | 下载 | Shanghai Prisemi Electronics Co.,Ltd |
| 9 | PBSS5250X,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):2A;功率(Pd):1W;直流电流增益(hFE@Ic,Vce):200@1A,2V; | 下载 | Rubycon Corporation |
| 10 | PBSS4330X,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):3A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):270@1A,2V; | 下载 | Rubycon Corporation |
| 11 | PBSS5330X,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):30V;集电极电流(Ic):3A;功率(Pd):1.4W;集电极截止电流(Icbo):100nA;集电极-发射极饱和... | 下载 | Rubycon Corporation |
| 12 | PXT2907A,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):600mA;功率(Pd):1.1W;直流电流增益(hFE@Ic,Vce):100@150... | 下载 | Rubycon Corporation |
| 13 | PBSS305PX,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):80V;集电极电流(Ic):4A;功率(Pd):600mW;直流电流增益(hFE@Ic,Vce):120@2A,2V... | 下载 | Rubycon Corporation |
| 14 | PBSS4360XX | 晶体管类型:NPN;集射极击穿电压(Vceo):60V;集电极电流(Ic):3A;功率(Pd):1.35W;直流电流增益(hFE@Ic,Vce):75@3A,5V; | 下载 | Rubycon Corporation |
| 15 | PBSS4540X,135 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):4A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):250@2A,2V; | 下载 | Rubycon Corporation |
| 16 | PBSS5250X,135 | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):2A;功率(Pd):1W;集电极截止电流(Icbo):100nA;集电极-发射极饱和电压... | 下载 | Rubycon Corporation |
| 17 | PBSS303PX,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):30V;集电极电流(Ic):5.1A;功率(Pd):600mW;集电极截止电流(Icbo):100nA;集电极-发射... | 下载 | Rubycon Corporation |
| 18 | PDTC114ET,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V; | 下载 | Rubycon Corporation |
| 19 | PDTC123JT,215 | 100@10mA,5V 100mV@5mA,250uA 1 NPN - Pre Biased 250mW 100mA 50V 1uA SOT-23 Digital... | 下载 | Rubycon Corporation |
| 20 | PDTA123JT,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
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