RBQ20NS45A

Data Sheet Schottky Barrier Diode RBQ20NS45A lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) lFeatures 1)Cathode Common Dual type.（LPDS） 2)Low IR. BQ20NS 45A ① lConstruction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day lStructure ① lTaping dimensions (Unit : mm) ② ③ lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) (*2) Junction temperature Tj Storage temperature Tstg Limits 45 45 20 100 150 -40 to +150 Unit V V A A °C °C (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C. lElectrical characteristics (Tj=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.65 0.3 Unit V mA IF=10A VR=45V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A RBQ20NS45A 　 Data Sheet 100 100000 Ta=150°C 10000 Ta=125°C Ta=150°C Ta=75°C Ta=25°C FORWARD CURRENT:IF(A) 10 REVERSE CURRENT:IR(mA) 1000 Ta=125°C 100 Ta=75°C 10 Ta=25°C 1 0.1 Ta=-25°C 0.01 0 100 200 300 400 500 600 700 1 0.1 Ta=-25°C 0.01 0 10 20 30 40 50 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz FORWARD VOLTAGE:VF(mV) 550 Ta=25°C IF=10A n=30pcs 540 1000 AVE:538.6mV 530 100 520 10 510 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 500 VF DISPERSION MAP 50 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 45 40 REVERSE CURRENT:IR(mA) 35 30 25 20 15 10 5 0 AVE:27.8mA Ta=25°C VR=45V n=30pcs 1300 Ta=25°C f=1MHz VR=0V n=10pcs 1250 1200 AVE:1140.8pF 1150 1100 1050 1000 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RBQ20NS45A 　 Data Sheet 500 450 PEAK SURGE FORWARD CURRENT:IFSM(A) 400 350 300 250 200 150 100 50 0 IFSM DISRESION MAP AVE240A IFSM 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 AVE:14.6ns 15 10 5 0 trr DISPERSION MAP 500 450 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 400 350 300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM 8.3ms 1cyc 8.3ms 500 450 400 350 300 250 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IFSM t 1000 25 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 100 FORWARD POWER DISSIPATION:Pf(W) 20 10 Rth(j-a) 15 D=1/2 1 Rth(j-c) 10 Sin(q＝180) DC 0.1 5 0.01 0.001 0 0.01 0.1 1 10 100 1000 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RBQ20NS45A 　 Data Sheet 4 3.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 REVERSE POWER DISSIPATION:PR (W) 2.5 2 1.5 Sin(q＝180) 1 0.5 0 0 10 20 30 40 50 DC 50 45 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 Sin(q＝180) D=1/2 T DC 0A 0V t Io VR D=t/T VR=20V Tj=150°C D=1/2 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 50 45 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 35 30 25 20 15 10 5 0 0 25 50 Sin(q＝180) D=1/2 DC 0A 0V Io VR t T ELECTROSTATIC DISCHARGE TEST ESD(KV) D=t/T VR=20V Tj=150°C 30 No break at 30kV 25 20 15 10 AVE:12.4kV 5 0 75 100 125 150 C=200pF R=0W C=100pF R=1.5kW CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A