RBQ10NS45AFH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
45
V
Io
10
A
IFSM
50
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BQ10NS45A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
45
V
Reverse voltage
VR
Reverse direct voltage
45
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=130℃Max.
10
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
50
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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- 1+8.725491+1.06134
- 10+6.5501610+0.79674
- 50+4.3667850+0.53116
- 100+3.48859100+0.42434
- 500+3.27105500+0.39788
- 1000+3.142151000+0.38220
- 2000+3.101862000+0.37730
- 4000+3.077694000+0.37436