RF505B6S_11

Data Sheet Super Fast Recovery Diode RF505B6S  Series Standard Fast Recovery  Dimensions（Unit : mm）  Land size figure (Unit : mm) 6.0  Applications General rectification (2) 1.6 1.6 (3) 2.3 2.3  Features 1)Power mold type. (CPD) 2)High switching speed 3)Low Reverse current (1) CPD  Structure  Construction Silicon epitaxial planar Production month (1)  Taping dimensions（Unit : mm） 3.0 2.0 6.0 (2) (3)  Absolute maximum ratings（Tc=25 C） Parameter Symbol Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave,resistive load Tc=42 C Limits 600 600 5 50 150 55 to 150 Unit V V A A C C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25  C  Electrical characteristics（Tj=25 C） Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-l) Conditions IF=5.0A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR junction to lead Min. - Typ. 1.3 0.05 22 － Max. 1.7 10 30 12 Unit V μA ns  C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.A RF505B6S Electrical characteristic curves 　 Data Sheet 100 Tj=125 C 10 Tj=150 C 100000 Tj=150 C 1000 f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 600 10000 Tj=75 C Tj=125 C Tj=25 C 100 1000 1 Tj=25 C 0.1 Tj=75 C 100 10 10 0.01 0 500 1000 1500 2000 2500 1 0 100 200 300 400 500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1400 100 Tj=25 C IF=5A n=20pcs Tj=25 C VR=600V n=20pcs AVE:33.7nA 10 170 Tj=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1350 1300 1250 1200 1150 1100 AVE:1297mV 160 150 AVE:150.6pF 140 130 1 VF DISPERSION MAP IR DISPERSION MAP 120 Ct DISPERSION MAP 300 30 1000 Tj=25 C IF=0.5A IR=1A Irr=0.25×IR n=10pcs REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:I FSM(A) 250 200 150 100 25 20 AVE:22.0ns 15 10 5 0 100 10 Ifsm 8.3ms 8.3ms AVE:107.5A 50 0 1cyc 1 1 IFSM DISRESION MAP trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 Ifsm 30 No break at 30kV 25 100 On glass-epoxy board TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) PEAK SURGE FORWARD CURRENT:I FSM(A) ELECTROSTATIC DISCHARGE TEST ESD(KV) t Rth(j-a) 10 Rth(j-c) IM=100mA 20 15 10 5 0 AVE:19.9kV 100 1 1ms IF=1.5A time 300us 0.1 0.001 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 C=200pF R=0 C=100pF R=1.5k 0.01 ESD DISPERSION MAP 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.A RF505B6S 　 Data Sheet 0A 0V t 7 D.C. 6 half sin wave 5 4 D=0.05 3 2 1 0 0 2 4 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 8 D=0.1 D=0.5 D=0.8 9 8 D.C. D=0.8 0A 0V t T D=0.5 half sin wave D=0.2 D=0.1 D=0.05 Io VR D=t/T VR=480V Tj=150 C 9 8 T D.C. D=0.8 D=0.5 Io VR D=t/T VR=480V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) FORWARD POWER DISSIPATION:Pf(W) D=0.2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 7 6 5 4 3 2 1 0 0 30 7 6 5 4 3 2 1 0 half sin wave D=0.2 D=0.1 D=0.05 60 90 120 150 0 30 60 90 120 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A