RF505TF6S_11

Data Sheet Super Fast Recovery Diode RF505TF6S Series Standard Fast Recovery Dimensions (Unit : mm) Structure Applications General rectification RF505 TF6S Features 1)Low switching loss 2)High current overload capacity ① ② Construction Silicon epitaxial planer ROHM : TO220NFM ① ② Manufacture Year Manufacture Week Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty≤0.5 Direct voltage 60Hz half sin wave, Resistance load, Tc=125°C Limits 600 600 5 80 150 55 to 150 Unit V V A A C C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Electrical characteristics (Tj=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-c) Conditions IF=5A VR=600V IF=0.5A,IR=1A,Irr=0.25×I R junction to case Min. － － － － Typ. 1.3 0.03 22 － Max. 1.7 10 30 3 Unit V μA ns °C/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A RF505TF6S 　 Data Sheet 100 Tj=125°C 10 FORWARD CURRENT:IF(A) 1000000 100000 REVERSE CURRENT:IR(nA) Tj=150°C Tj=150°C Tj=125°C 10000 1 Tj=25°C 0.1 1000 100 Tj=25°C 0.01 10 0.001 0 500 1000 1500 2000 2500 1 0 100 200 300 400 500 600 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz FORWARD VOLTAGE:VF(mV) 1500 IF=5A Tj=25°C 1400 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 1300 1200 AVE:1247mV 1100 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1000 VF DISPERSION MAP 1000 VR=600V Tj=25°C REVERSE CURRENT : IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 180 f=1MHz VR=0V Tj=25°C 160 100 AVE:22.4nA 10 140 AVE:150.2pF 1 IR DISPERSION MAP 120 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RF505TF6S 　 Data Sheet 200 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc REVERSE RECOVERY TIME:trr(ns) 30 IF=0.5A IR=1A Irr=0.25*IR Tj=25°C 25 8.3ms 20 AVE:22.0ns 15 150 10 AVE:136.5A 5 100 IFSM DISPERSION MAP 0 trr DISPERSION MAP 1000 1000 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 1cyc 100 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM t 100 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 30 No break at 30kV TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 100 20 AVE：19.9kV 10 Rth(j-a) 15 Rth(j-c) 1 10 5 C=200pF R=0Ω C=100pF R=1.5kΩ 0 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RF505TF6S 　 0A 0V t T Data Sheet Io VR 8 7 D.C. 6 FORWARD POWER DISSIPATION:Pf(W) D=0.5 5 4 3 2 1 0 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS D=0.1 D=0.05 half sin wave D=0.2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=0.8 9 8 7 6 5 half sin wave 4 3 2 1 0 0 30 60 90 120 D=0.2 D=0.1 D=0.05 D=0.5 D.C. D=0.8 D=t/T VR=480V Tj=150°C 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 9 8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 7 6 5 half sin wave 4 3 2 1 0 0 30 60 90 120 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) D=0.2 D=0.1 D=0.05 D=0.5 T D.C. D=0.8 0A 0V t Io VR D=t/T VR=480V Tj=150°C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A