RU30D10H

RU30D10H N-Channel Advanced Power MOSFET MOSFET Features • 30V/10A, RDS (ON) =16mΩ (Typ.) @ VGS=10V RDS (ON) =24mΩ (Typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available Pin Description SOP-8 Applications • SMPS Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 30 ±20 150 -55 to 150 TA=25°C 2.5 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TA=25°C TA=25°C TA=70°C PD RθJA ② 38 A A 10 7 2 1.3 62.5 Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=70°C W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 www.ruichips.com RU30D10H Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU30D10H Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 30V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS= 10V, IDS=10A VGS= 4.5V, IDS=8A 30 1 30 1.5 2 2.7 ±100 16 24 18 27 V µA V nA mΩ mΩ Diode Characteristics VSD trr Qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=1A, VGS=0V ISD=10A, dlSD/dt=100A/µs 8 9 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=1.5Ω, IDS=10A, VGEN=10V, RG=6Ω 1.1 680 140 80 5 10 18 6 1 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing . 15 VDS=24V, VGS=10V, IDS=10A 2 4 19 nC Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 2 www.ruichips.com RU30D10H Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com ID - Drain Current (A) RU30D10H Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU30D10H Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 5 VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU30D10H Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 6 www.ruichips.com RU30D10H Ordering and Marking Information RU30D10 Package (Available) H : SOP-8 Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 7 www.ruichips.com RU30D10H Package Information SOP-8 SYMBOL A A1 A2 b c D MM MIN 1.350 0.100 1.350 0.330 0.170 4.700 MAX 1.750 0.250 1.550 0.510 0.250 5.100 MIN INCH MAX 0.069 0.010 0.061 0.020 0.010 0.200 SYMBOL E E1 e L θ MIN 3.800 5.800 0.400 0° 0.053 0.004 0.053 0.013 0.006 0.185 MM MAX 4.000 6.200 1.270 8° INCH MIN 0.150 0.228 0.016 0° MAX 0.157 0.244 0.050 8° 1.270 (BSC) 0.050 (BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 8 www.ruichips.com RU30D10H Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 9 www.ruichips.com