RU30L30M

RU30L30M www.VBsemi.com P-Channel 30 V (D-S) MOSFET VDS RDS(on),typ RDS(on),typ ID VGS=10V VGS=4.5V -30 V 11 18 -45 mΩ mΩ A FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • Adaptor Switch • Notebook PC DFN 3x3 EP S Bottom View Top View Top View G 1 8 2 7 3 6 4 5 D P-Channel MOSFET Pin 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range c, d TJ, Tstg Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c.Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. d.Package limited. e.Based on T C = 25 °C Limit - 30 ± 20 Unit V - 45 - 30 - 14.4a, b - 11.5a, b - 60 - 35e - 3.2a, b - 25 31.25 52 A mJ 43 3.8a, b 2.4a, b - 50 to 150 260 W °C 1 RU30L30M www.VBsemi.com THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC t ≤ 10 s Steady State Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) Typical 26 1.9 Maximum 33 2.4 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = - 250 µA - 30 ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage Typ. Max. V - 20 ID = - 250 µA Unit mV/°C 5 VGS(th) VDS = VGS, ID = - 250 µA - 2.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd gfs Rg Gate Resistance VDS ≤ - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 14.4 A tr Rise Time Fall Time Turn-On Delay Time VDS = - 15 V, ID = - 14.4 A 18 37 VDS = - 15 V, VGS = 0 V, f = 1 MHz 2000 385 a Pulse Diode Forward Current Body Diode Voltage S pF 322 15 VDS = - 15 V, VGS = - 10 V, ID = - 14.4 A 14 VDS = - 15 V, VGS = - 4.5 V, ID = - 14.4 A f = 1 MHz VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 0.4 1.8 7 9 3.6 50 75 65 tf 14 21 td(on) 14 21 VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω tf Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current mΩ 45 td(off) IS 9 18 36 54 10 20 - 35e - 60 TC = 25 °C ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb µA A 11 43 tr Rise Time Turn-Off DelayTime - 20 30 td(off) Turn-Off DelayTime -1 VGS = - 4.5 V, ID = - 11.5 A td(on) Turn-On Delay Time - 1.5 IF = - 10 A IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C nC Ω ns A - 0.8 - 1.2 V 31 47 ns 30 45 nC 15 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 RU30L30M www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 1.2 VGS = 10 V thru 5 V 0.9 ID - Drain Current (A) ID - Drain Current (A) 45 4V 30 125 ºC 0.6 25 ºC 15 0.3 - 55 ºC 0 0.0 3 6 9 15 12 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 3600 0.025 3000 C - Capacitance (pF) RDS - On-Resistance (mΩ) 0 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 Ciss 2400 1800 1200 0.005 600 0.000 0 Coss Crss 0 10 20 40 30 50 0 60 6 12 18 24 30 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 1.8 RDS(on) - On-Resistance (normalized) VGS - Gate-to-Source Voltage (V) ID = 14.4 A 8 VDS = 15 V, ID = 14.4 A 6 4 VDS = 24 V, ID = 14.4 A 2 0 0 10 20 30 40 50 1.5 VGS = 10 V 1.2 VGS = 4.5 V 0.9 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (ºC) Gate Charge On-Resistance vs. Junction Temperature 3 RU30L30M www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.04 RDS(on) - Drain-to-Source On-Resistance (Ω) IS - Source Current (A) 100 TJ = 150 ºC 10 TJ = 25 ºC 1 0.1 0.0 0.03 0.02 TJ = 125 ºC 0.01 TJ = 25 ºC 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 6 8 10 12 14 16 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0 2 4 18 20 50 2.4 ID = 250 µA 2.2 40 Power (W) 1.8 30 20 1.6 10 1.4 1.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (ºC) 1.0 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 100 µs 10 ID - Drain Current (A) VGS(th) (V) 2.0 1 ms 10ms 1 100 ms 1s 10 s 0.1 TA = 25 ºC Single Pulse 0.01 0.1 DC BVDSS Limited 1 10 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is Specified Safe Operating Area, Junction-to-Ambient 4 RU30L30M www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 ID - Drain Current (A) 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - CaseTemperature (°C) Current Derating* 75 2 60 Power (W) Power (W) 1.5 45 30 1 0.5 15 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (ºC) TA - Ambient Temperature (ºC) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 RU30L30M www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 RU30L30M www.VBsemi.com 7 RU30L30M www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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