FSS802

Ordering number : ENN8044 FSS802 N-Channel Silicon MOSFETs FSS802 Features • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (PW≤10µs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD Tch Tstg duty cycle≤1% duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) PW≤10s Conditions Ratings 30 ±20 12 14 52 3.0 150 --55 to +150 Unit V V A A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=12A ID=12A, VGS=10V ID=6A, VGS=4.5V ID=6A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min 30 1 ±10 1.2 9.6 16 9 14 17 2300 430 300 17 200 150 130 13 21 26 2.6 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns Marking : S802 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71504 TS IM TB-00000482 No.8044-1/4 FSS802 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=10V, ID=12A VDS=10V, VGS=10V, ID=12A VDS=10V, VGS=10V, ID=12A IS=12A, VGS=0 Ratings min typ 33 5 6 0.81 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2116 8 5 0.3 Switching Time Test Circuit VDD=15V 10V 0V VIN ID=12A RL=1.25Ω VIN 4.4 6.0 5.0 1.5 1.8max 1 4 0.2 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 PW=10µs D.C.≤1% D G VOUT P.G 50Ω S FSS802 0.595 1.27 0.43 0.1 8.0V 10 ID -- VDS 6.0V 4.5V 18 ID -- VGS VDS=10V 16 8 10.0V Drain Current, ID -- A Drain Current, ID -- A VGS=3.0V 14 12 10 8 6 6 4.0V Ta=7 5 0 0.5 1.0 1.5 2.0 4 °C 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2.5 3.0 3.5 IT04076 Drain-to-Source Voltage, VDS -- V 50 IT04075 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 30 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 25 20 ID=6A 15 12A 10 =6A V, I D 4.0 = =6A V GS V, I D =4.5 VGS =12A 0V, I D =10. VGS 5 0 --60 --40 --20 0 20 40 60 25° 2 80 C 4 100 --25° C 120 140 160 Gate-to-Source Voltage, VGS -- V IT04077 Ambient Temperature, Ta -- °C IT04078 No.8044-2/4 FSS802 5 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 3 2 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IF -- VSD VGS=0 10 7 5 3 2 = Ta 5°C --2 5 °C 75 °C 25° C Forward Current, IF -- A C 0.5 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 7 5 3 2 0.001 0.2 0.3 0.4 --25 °C 0.6 0.7 Ta= 7 25 ° 0.8 0.9 1.0 Drain Current, ID -- A 10000 7 5 IT04079 10 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V Diode Forward Voltage, VSD -- V IT04080 Qg -- VGS 9 8 7 6 5 4 3 2 1 VDS=10V ID=12A Ciss, Coss, Crss -- pF 3 2 Ciss 1000 7 5 3 2 Coss Crss 100 0 5 10 15 20 25 30 IT07598 0 0 5 10 15 20 25 30 35 IT04082 Drain-to-Source Voltage, VDS -- V 1000 7 5 Total Gate Charge, Qg -- nC 100 7 5 3 2 SW Time -- ID VDD=15V VGS=10V ASO IDP=52A ID=12A 10 ≤10µs 1m Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 td(off) Drain Current, ID -- A tf 10 7 5 3 2 1.0 7 5 3 2 10 0m s s ms tr td(on) DC Operation in this area is limited by RDS(on). 10 op s era tio n 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 3.5 IT04083 PD -- Ta 0.1 7 5 Ta=25°C 3 Single pulse 2 2 0.01 Mounted on a ceramic board (1200mm !0.8mm) 2 3 5 7 1.0 2 3 5 7 10 23 5 0.01 2 3 5 7 0.1 IT07985 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 3.0 M ou nt 2.5 ed on ac er 2.0 am ic bo ar d 1.5 (1 20 0m 1.0 m2 ! 0. 8m m 0.5 0 0 20 40 60 80 100 120 )P W ≤1 0 s 160 140 Ambient Temperature, Ta -- °C IT04085 No.8044-3/4 FSS802 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2004. Specifications and information herein are subject to change without notice. PS No.8044-4/4