FW214

Ordering number :EN5850 N-Channel Silicon MOS FET FW214 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 2.5V drive. Package Dimensions unit:mm 2129 [FW214] 8 5 0.3 5.0 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8 4.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on ceramic board (1200mm2×0.8mm) 1unit Mounted on ceramic board (1200mm2×0.8mm) Conditions Ratings 20 ±10 5 48 1.7 2.0 150 –55 to +150 6.0 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter D-S Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leak Current Cutoff Current Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A IS=5A, VGS=0 0.4 8 13 38 50 500 280 150 20 250 70 130 22 3 3 1.0 1.2 50 70 Conditions Ratings min 20 100 ±10 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52698TS (KOTO) TA-0974 No.5850-1/3 FW214 Switching Time Test Circuit 4V 0V VIN VIN PW=10µs D.C.≤1% D VDD=10V ID=5A RL=2Ω VOUT G P.G 50Ω S FW214 6 I D - VDS 6.0 V 5.0 V 4.0V 2.5V 3.5 V 3.0 V 2.0 V 10 9 8 A I D - VGS VDS =10V 5 A 8.0V Drain Current, ID - Drain Current, ID - 4 7 6 5 3 3 1 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 Ta= 2.0 25˚ VGS=1.5V C –25 2 ˚C 4 75˚C 2.5 Drain-to-Source Voltage, VDS - V 100 7 VDS=10V 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 2 Gate-to-Source Voltage, VDS - V 100 | yfs | – ID Static Drain-to-Source ON-State Resistance, RDS (on) – mΩ R DS(on) - VGS Tc=25˚C Forwaard Transfer Addmittance,|yfs| - S 90 25˚C Ta =25˚ C 70 60 50 40 30 20 10 0 0 1 C 75˚ ID=2A 2 ID=5A 3 80 4 5 6 7 8 9 10 Drain Current, ID - A 100 Gate-to-Source Voltage,VGS - V 10 7 VGS=0 5 R DS(on) - Tc I F - VSD Static Drain-to-Source ON-State Resistance, RDS (on) – mΩ 90 70 60 50 40 30 20 10 0 -60 -40 -20 0 20 40 60 80 100 120 140 Forward Current, IF – A 80 3 2 1.0 7 5 3 2 A, V I D =2 GS =2.5 V Ta =7 5˚C –25˚C 0.6 A, ID =5 VGS = 4V 0.1 7 5 3 2 0.01 0 0.2 0.4 –25˚C 0.8 1.0 1.2 Case Temperature, Tc - ˚C Diode Forward Voltage, VSD – V No.5850-2/3 FW214 10000 7 5 3 2 Ciss,Coss,Crss - VDS f=1MHz 10 VGS - Qg Gate-to-Source Voltage, VGS – V 20 VDS=10V 9 ID =5A 8 7 6 5 4 3 2 1 Ciss,Coss,Crss - pF 1000 7 5 3 2 100 7 5 3 2 10 0 2 4 6 8 10 12 14 16 Ciss Coss Crss 18 0 0 2 4 6 8 10 12 14 16 18 20 22 Drain-to-Source Voltage,VDS – V 1000 7 VDD =10V 5 VGS=4V Total Gate Charge, Qg – nC 100 7 I DP = 4 8 A 5 3 2 SW Time - I D ASO 10µs 100 µs Switching Time, SW Time – ns Drain Current, I D - A 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 0.1 2 3 5 7 1.0 2 tr tf t d( t d(on) off) 10 7 5 3 2 1.0 7 5 3 2 ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ID=5A Operation in this area is limited by RDS(on). 1m 10 100 ms DC op era tio n Ta= 25˚C 1pulse 0.1 1unit 7 Mounted on ceramic board (1200mm2 × 0.8mm) 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 3 5 7 10 2 Drain Current, ID – A 2.0 Drain -to-Source Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) ou PD - Ta Allowable Dissipation, PD(FET 2) – W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 1.2 1.4 1.6 1.8 Dissipation, PD(FET 1) – W 0.8 1.0 2.0 0 0 Allowable Dissipation, PD – W M nte 2.0 1.7 do nc era mi cb oa 1.5 rd (1 20 To 1.0 0m tal m× 0.8 2 Di ss mm 1u ip ) nit ati on 0.5 Mounted on ceramic board (1200mm2×0.8mm) 20 40 60 80 100 120 140 160 Allowable Ambient Temperature, Ta – ˚C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.5850-3/3