CZT5551

CZT5551 Elektronische Bauelemente RoHS Compliant Product NPN Transistor Epitaxial Planar Transistor SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H REF. B J 1 2 3 4 5 Date Code 5 5 51 B C E Min. 6.70 2.90 0.02 0C 0.60 0.25 Max. 7.30 3.10 0.10 10 C 0.80 0.35 MAXIMUM RATINGS* (Tamb =25 C , unless otherwise specified) Symbol VCBO VCEO VE BO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Total Power Dissipation Junction and Storage Temperature Parameter Value 180 160 6 600 1.5 -55~-150 o Min. Max. 13 T YP. C 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Units V V V mA W O IC PD TJ,Tstg C ELECTRICAL CHARACTERISTICS Tamb=25 C unlessotherw ise o specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IE B O hFE hFE hFE 1 2 3 MIN 180 160 6 _ _ TYP _ _ _ _ _ _ MAX _ _ _ UNIT V V V nA nA _ _ _ Test conditions Ic= 100u A,IE=0 IC= 1mA,IB=0 IE= 10u A,IC=0 VCB= 120V,IE=0 VEB= 4V,IC=0 VCE= 5V, IC= 1mA VCE= 5V, IC= 10mA VCE= 5V, IC= 50mA I C= 10mA, IB= 1mA I C= 50mA, IB= 5mA IC= 10mA,IB= 1mA IC= 50mA,IB= 5mA VCE= 10V,IC= 10mA , f = 100MHz 50 50 _ 80 80 50 _ _ _ _ 160 _ _ _ _ _ _ _ 400 _ Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) 1 VCE(sat) 2 VBE(sat) 1 VBE(sat) 2 0.15 0.2 1 1 300 6 V V MHz pF fT Cob 100 _ Collector output capacitance VCB= 10V, f=1 MHz,IE=0 CLASSIFICATION OF hFE Rank Range A N 100-240 C 160-400 Any changing of specification will not be informed individual 80-200 http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Page 1 of 2 CZT5551 Elektronische Bauelemente NPN Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page2 of 2