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2N4150S

2N4150S

  • 厂商:

    SEMICOA

  • 封装:

  • 描述:

    2N4150S - Type 2N4150S Geometry 9201 Polarity NPN - Semicoa Semiconductor

  • 数据手册
  • 价格&库存
2N4150S 数据手册
Data Sheet No. 2N4150S Type 2N4150S Geometry 9201 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • Power switching transistor for high speed switching applicatons. Housed in a TO-39 case. Also available in chip form using the 9201 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases. Generic Part Number: 2N4150S REF: MIL-PRF-19500/394 TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation at 25oC ambient Derate above 25oC Power Dissipation at 25oC ambient Derate above 25oC Thermal Impedance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT RJC RJA TJ TSTG Rating 70 100 10 10 1.0 5.7 5.0 50 0.020 0.175 -65 to +200 -65 to +200 Unit V V V A mW mW/oC W mW/oC o C/mW o C/mW o C C o Data Sheet No. 2N4150S Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 0.1 A, pulsed Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VCE = 60 V VBE = 0.5 V, VCE = 100 V o VBE = -0.5 V, VCE = 80 V, TC = +150 C Emitter-Base Cutoff Current VEB = 5V Collector-Base Cutoff Current VCB = 80 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEO1 ICEX ICEX2 IEBO ICBO Min 100 70 7.0 --------- Max ------10 10 100 0.1 0.1 Unit V V V µA µA µA µA µA ON Characteristics Forward current Transfer Ratio IC = 1 A, VCE = 5 V, pulsed IC = 5 A, VCE = 5.0 V, pulsed IC = 10 A, VCE = 5 V IC = 5 A, VCE = 5.0 V, TC = -55oC Collector-Emitter Saturation Voltage IC = 5 A, IB = 0.5 A pulsed IC = 10 A, IB = 1 A, pulsed Base-Emitter Saturation Voltage IC = 5 A, IB = 0.5 A, pulsed IC = 10 A, IB = 1 A, pulsed Safe Operating Area, Continuous DC TC = 25 C, t = 1.0 s o Symbol hFE1 hFE2 hFE3 hFE4 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Min 50 40 10 20 --------- Max 200 120 ----0.6 2.5 1.5 2.5 Unit --------V dc V dc V dc V dc VCE = 40 V, IC = 0.22 A VCE = 70 V, IC = 90 mA Small Signal Characteristics Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio VCE = 10 V, IC = 0.2 A, f = 10 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Small Signal, Short Circuit, Forward Current VCE = 10 V, IC = 50 mA, f = 1 kHz Symbol |hfe| COBO hfe Min 1.5 --40 Max 7.5 350 160 Unit --pF --- Switching Characteristics Delay Time Per Figure 4, MIL-PRF-19500/394C Rise Time Per Figure 4, MIL-PRF-19500/394C Storage Time Per Figure 4, MIL-PRF-19500/394C Fall Time Per Figure 4, MIL-PRF-19500/394C Symbol td tr ts tf Min --------- Max 50 500 1.5 50 Unit ns ns ns ns
2N4150S 价格&库存

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