SBL13003

SemiWell Semiconductor SBL13003 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 120ns@1.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 200mV@1.0A/0.25A) - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ ○ 3.Emitter General Description This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-92L 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 5 ms ) Base Current Base Peak Current ( tP ＜ 5 ms ) Total Dissipation at TA = 25 °C Storage Temperature Max. Operating Junction Temperature Value 700 400 9.0 1.5 3.0 0.75 1.5 1.5 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient Value 83 Units °C/W Oct, 2002. Rev. 2 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/5 SBL13003 Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 0.5A IC = 1.0A IC = 1.5A IC = 0.5A IC = 1.0A IC = 0.5A IC = 1.0A IC = 1.0A IB1 = 0.2A T P = 2 5㎲ VCC = 15V IB1 = 0.2A L = 0.35mH VCC = 15V IB1 = 0.2A L = 0.35mH IC = 1.0A IB2 = -0.5A Vclamp = 300V IC = 1.0A IB2 = -0.5A Vclamp = 300V TC = 100 °C IB = 0.1A IB = 0.25A IB = 0.5A IB = 0.1A IB = 0.25A VCE = 2V VCE = 2V VCC = 125V IB2 = - 0.2A TC = 100 °C Min - Typ - Max 1.0 5.0 - Units mA 400 - V VCE(sat) Collector-Emitter Saturation Voltage - - 0.3 0.5 1.0 1.0 1.2 30 25 V VBE(sat) Base-Emitter Saturation Voltage - - V hFE DC Current Gain Resistive Load Turn-On Time Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time 10 5 - ton ts tf ts tf - 0.2 1.5 0.15 1.0 3.0 0.4 ㎲ - 2.0 0.12 4.0 0.3 ㎲ ts tf - 2.4 0.15 5.0 0.4 ㎲ ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% 2/5 SBL13003 Fig 1. Static Characteristics 3.0 2.7 2.4 IB = 500mA IB = 400mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA IB = 300mA 30 40 Fig 2. DC Current Gain IC, Collector Current [A] 1.8 1.5 1.2 0.9 0.6 0.3 0.0 0 1 2 3 4 hFE, DC Current Gain 2.1 TJ = 125 C o 20 TJ = 25 C o 10 ※ Notes : VCE = 5V VCE = 1V IB = 0mA 5 0 0.01 0.1 1 VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] Fig 3. Collector-Emitter Saturation Voltage 10 1.2 1.1 1 Fig 4. Base-Emitter Saturation Voltage VCE, Collector-Emitter Voltage [V] VBE, Base-Emitter Voltage [V] TJ = 125 C 0.1 o 1.0 TJ = 25 C 0.9 0.8 0.7 0.6 0.5 0.1 o TJ = 25 C 0.01 o TJ = 125 C ※ Note : hFE = 5 o ※ Note : hFE = 5 0.1 1 1 IC, Collector Current [A] IC, Collector Current [A] Fig 5. Resistive Load Fall Time 1000 10 Fig 6. Resistive Load Storage Time 100 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 tstg, Time [us] tf, Time [ns] TJ = 25 C o TJ = 25 C o ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 1 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IC, Collector Current [A] IC, Collector Current [A] 3/5 SBL13003 Fig 7. Safe Operation Areas 10 1 Fig 8. Reverse Biased Safe Operation Areas 1.6 IC, Collector Current [A] 10 -1 IC, Collector Current [A] 10 0 1.2 ※ Notes : TJ ≤ 100 °C IB1 = 1 A RBB = 0 Ω LC = 0.35mH DC 0.8 VBE(off) = -9V 10 -2 0.4 -5V -3V -1.5V ※ Single Pulse 10 -3 10 0 10 1 10 2 10 3 0.0 0 100 200 300 400 500 600 700 800 VCE, Collector-Emitter Clamp Voltage [V] VCE, Collector-Emitter Clamp Voltage [V] Fig 9. Power Derating Curve 125 Power Derating Factor (%) 100 75 50 25 0 0 50 100 150 o 200 TC, Case Temperature ( C) 4/5 SBL13003 Inductive Load Switching & RBSOA Test Circuit LC IB1 IC IB VCE D.U.T RBB VBE(off) VClamp VCC Resistive Load Switching Test Circuit RC IB1 IC IB VCE D.U.T RBB VBE(off) VCC 5/5