PC352NJ0000F

PC352NJ0000F Series PC352NJ0000F Series Mini-flat Package, High CMR Photocoupler ■ Description PC352NJ0000F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 80V and CTR is 90% to 480% at input current of IF 5mA. ■ Agency approvals/Compliance 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC352) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Programmable controllers ■ Features 1. Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. High resistance to noise due to high common mode rejection voltage (CMR : MIN. 10kV/µs) 4. High collector-emitter voltage (VCEO : 80V) 5. High isolation voltage between input and output (Viso(rms) : 3.75kV) 6. Lead-free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A00202EN Date Jun. 30. 2005 © SHARP Corporation PC352NJ0000F Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions 3.6±0.3 2.54±0.25 4 3 (Unit : mm) SHARP mark "s" Anode mark Date code 352 1 2 4.4±0.2 Rank mark 0.4±0.1 Factory identification mark 5.3±0.3 45˚ 0.2±0.05 Epoxy resin 0.1±0.1 2.6±0.2 6˚ 0.5+0.4 −0.2 7.0+0.2 −0.7 Product mass : approx. 0.1g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A00202EN 2 PC352NJ0000F Series Date code (2 digit) 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M · · N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 Mark P R S T U V W X A B C · · · repeats in a 20 year cycle Factory identification mark Factory identification Mark no mark Japan Indonesia China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production. Country of origin Rank mark Refer to the Model Line-up table Sheet No.: D2-A00202EN 3 PC352NJ0000F Series ■ Absolute Maximum Ratings Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Topr Operating temperature Tstg Storage temperature *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 80 6 50 150 170 −30 to +100 −40 to +125 3.75 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Parameter Symbol Forward voltage VF Peak forward voltage VFM IR Reverse current Ct Terminal capacitance ICEO Collector dark current Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Floating capacitance Cf fC Cut-off frequency Rise time tr Response time Fall time tf Common mode rejection voltage CMR Conditions IF=20mA IFM=0.5A VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz VCE=5V, IC=2mA, RL=100Ω, −3dB Output Input Input Output Transfer characteristics VCE=2V, IC=2mA, RL=100Ω Ta=25˚C, RL=470Ω, VCM=1.5kV(peak) IF=0mA, VCC=9V, Vnp=100mV MIN. − − − − − 80 6 4.5 − 5×1010 − 15 − − 10 TYP. 1.2 − − 30 − − − − 0.1 1×1011 0.6 80 4 5 − MAX. 1.4 3.0 10 200 100 − − 24 0.2 − 1.0 − 18 20 − (Ta=25˚C) Unit V V µA pF nA V V mA V Ω pF kHz µs µs kV/µs Sheet No.: D2-A00202EN 4 PC352NJ0000F Series ■ Model Line-up Package Taping 3 000 pcs/reel 750 pcs/reel PC352NTJ000F PC352N1TJ00F PC352N2TJ00F PC352N3TJ00F Rank mark with or without A B C IC [mA] (IF=5mA, VCE=5V, Ta=25˚C) 4.5 to 24.0 4.5 to 9.0 7.5 to 15.0 12.0 to 24.0 PC352NJ0000F PC352N1J000F Model No. PC352N2J000F PC352N3J000F Please contact a local SHARP sales representative to inquire about production status. Sheet No.: D2-A00202EN 5 PC352NJ0000F Series Fig.1 Test Circuit for Common Mode Rejection Voltae (dV/dt) VCM RL Vnp VCC  VCM : High wave  pulse   RL=470Ω  VCC=9V VO (Vcp Nearly = dV/dt×Cf×RL) 1) Vcp : Voltage which is generated by displacement current in floating capacitance between primary and secondary side. 1) Vcp Vnp VCM Fig.2 Forward Current vs. Ambient Temperature 50 Fig.3 Diode Power Dissipation vs. Ambient Temperature 100 Diode power dissipation P (mW) Forward current IF (mA) 40 80 70 60 30 20 40 10 0 −30 20 0 −30 0 25 50 55 75 100 125 0 25 50 55 75 100 125 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.4 Collector Power Dissipation vs. Ambient Temperature 250 Collector power dissipation PC (mW) Fig.5 Total Power Dissipation vs. Ambient Temperature 250 200 Total power dissipation Ptot (mW) 0 25 50 75 100 125 200 170 150 150 100 100 50 50 0 −30 0 −30 0 25 50 75 100 125 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Sheet No.: D2-A00202EN 6 PC352NJ0000F Series Fig.6 Peak Forward Current vs. Duty Ratio Pulse width≤100µs Ta=25˚C 100 Fig.7 Forward Current vs. Forward Voltage Ta= 75˚C 50˚C Forward current IF (mA) 25˚C 0˚C − 25˚C 1 000 Peak forward current IFM (mA) 100 10 10 10−3 10−2 Duty ratio 10−2 1 1 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage VF (V) Fig.8 Current Transfer Ratio vs. Forward Current 500 VCE=5V Ta=25˚C Current transfer ratio CTR (%) 400 Fig.9 Collector Current vs. Collector-emitter Voltage 40 IF=30mA 35 Collector current IC (mA) 30 25 20 15 10 5 5mA 20mA 10mA PC (MAX.) Ta=25˚C 300 200 100 0 1 10 Forward current IF (mA) 0 0 1 2 3 4 5 6 7 8 9 10 Collector-emitter voltage VCE (V) Fig.10 Relative Current Transfer Ratio vs. Ambient Temperature 150 IF=5mA VCE=5V Relative current transfer ratio (%) Fig.11 Collector - emitter Saturation Voltage vs. Ambient Temperature 0.16 0.14 Collector-emitter saturation voltage VCE (sat) (V) 0.12 0.1 0.08 0.06 0.04 0.02 IF=20mA IC=1mA 100 50 0 −30 0 25 50 75 100 125 0 −30 0 20 40 60 80 100 Ambient temperature Ta (˚C) Ambient temperaturet Ta (˚C) Sheet No.: D2-A00202EN 7 PC352NJ0000F Series Fig.12 Collector Dark Current vs. Ambient Temperature 10−5 −6 Fig.13 Response Time vs. Load Resistance VCE=50V 100 Response time (µs) Collector dark current ICEO (A) 10 VCE=2V IC=2mA Ta=25˚C 10−7 10−8 −9 10 tf tr td ts 10 1 10−10 10−11 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature Ta (˚C) 0.1 0.01 0.1 1 10 Load resistance RL (kΩ) Fig.14 Test Circuit for Response Time VCC RD Input VCE td tr ts tf 90% RL Output Input 10% Fig.15 Frequency Response 5 0 Voltage gain AV (dB) −5 100Ω −10 −15 −20 −25 RL=10kΩ 1kΩ VCE=5V IC=2mA Ta=25˚C Output Please refer to the conditions in Fig.13 1 10 Frequency f (kHz) 100 Fig.16 Collector-emitter Saturation Voltage vs. Forward Current 8 7 6 3mA 5 5mA 4 7mA 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 IC=0.5mA 1mA Ta=25˚C Collector-emitter saturation voltage VCE (sat) (V) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Forward current IF (mA) Sheet No.: D2-A00202EN 8 PC352NJ0000F Series ■ Design Considerations ● Design guide While operating at IF