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PC357NJ0000F

PC357NJ0000F

  • 厂商:

    SHARP(夏普)

  • 封装:

    SOP4_4.4X3.6MM

  • 描述:

    单向光耦 Viso=3750Vrms VF(typ)=1.2V IF=50mA Vo=80V Mini-Flat4

  • 数据手册
  • 价格&库存
PC357NJ0000F 数据手册
PC357NJ0000F Series PC357NJ0000F Series Mini-flat Package, General Purpose Photocoupler ■ Description PC357NJ0000F Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat package. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 80V and CTR is 50% to 600% at input current of 5mA. ■ Agency approvals/Compliance 1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC357) 2. Package resin : UL flammability grade (94V-0) ■ Applications 1. Hybrid substrates that require high density mounting 2. Programmable controllers ■ Features 1. 4-pin Mini-flat package 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 80V) 4. Current transfer ratio (CTR) : MIN. 50% at IF=5mA, VCE=5V 5. Several CTR ranks available 6. High isolation voltage between input and output (Viso(rms) : 3.75kV) 7. Lead-free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D2-A00102EN Date Jun. 30. 2005 © SHARP Corporation PC357NJ0000F Series ■ Internal Connection Diagram 1 1 4 2 3 2 3 4 Anode Cathode Emitter Collector ■ Outline Dimensions 3.6±0.3 2.54±0.25 4 3 (Unit : mm) SHARP mark "S" Date code Anode mark 357 1 2 4.4±0.2 Rank mark Factory identification mark 0.4 ±0.1 5.3±0.3 Epoxy resin 45˚ 2.6±0.2 0.2±0.05 0.1±0.1 6˚ 0.5+0.4 −0.2 7.0+0.2 −0.7 Product mass : approx. 0.1g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D2-A00102EN 2 PC357NJ0000F Series Date code (2 digit) 1st digit Year of production A.D Mark 2002 A 2003 B 2004 C 2005 D 2006 E 2007 F 2008 H 2009 J 2010 K 2011 L 2012 M · · N · 2nd digit Month of production Month Mark January 1 February 2 March 3 April 4 May 5 June 6 July 7 August 8 September 9 October O November N December D A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 Mark P R S T U V W X A B C · · · repeats in a 20 year cycle Factory identification mark Factory identification Mark no mark Japan Indonesia China * This factory marking is for identification purpose only. Please contact the local SHARP sales representative to see the actual status of the production Country of origin Rank mark Refer to the Model Line-up table Sheet No.: D2-A00102EN 3 PC357NJ0000F Series ■ Absolute Maximum Ratings Parameter Symbol Forward current IF *1 Peak forward current IFM Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO IC Collector current Collector power dissipation PC Ptot Total power dissipation Operating temperature Topr Storage temperature Tstg *2 Isolation voltage Viso (rms) *3 Soldering temperature Tsol Rating 50 1 6 70 80 6 50 150 170 −30 to +100 −40 to +125 3.75 260 (Ta=25˚C) Unit mA A V mW V V mA mW mW ˚C ˚C kV ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s ■ Electro-optical Characteristics Parameter Symbol Forward voltage VF IR Reverse current Terminal capacitance Ct Collector dark current ICEO Collector-emitter breakdown voltage BVCEO Emitter-collector breakdown voltage BVECO Collector current IC Collector-emitter saturation voltage VCE (sat) Isolation resistance RISO Cf Floating capacitance tr Rise time Response time Fall time tf Conditions IF=20mA VR=4V V=0, f=1kHz VCE=50V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=5mA, VCE=5V IF=20mA, IC=1mA DC500V, 40 to 60%RH V=0, f=1MHz Output Input Input Output Transfer characteristics VCE=2V, IC=2mA, RL=100Ω MIN. − − − − 80 6 2.5 − 5×1010 − − − TYP. 1.2 − 30 − − − 5 0.1 1×1011 0.6 4 3 MAX. 1.4 10 250 100 − − 30 0.2 − 1.0 18 18 (Ta=25˚C) Unit V µA pF nA V V mA V Ω pF µs µs Sheet No.: D2-A00102EN 4 PC357NJ0000F Series ■ Model Line-up Taping IC [mA] Rank mark (IF=5mA, VCE=5V, Ta=25˚C) 750pcs/reel 3 000pcs/reel PC357NJ0000F PC357NTJ000F with or without 2.5 to 30.0 A PC357N1J000F PC357N1TJ00F 4.0 to 8.0 B PC357N2J000F PC357N2TJ00F 6.5 to 13.0 C PC357N3J000F PC357N3TJ00F 10.0 to 20.0 D PC357N4J000F PC357N4TJ00F 15.0 to 30.0 Model No. A or B PC357N5J000F PC357N5TJ00F 4.0 to 13.0 B or C PC357N6J000F PC357N6TJ00F 6.5 to 20.0 C or D PC357N7J000F PC357N7TJ00F 10.0 to 30.0 A, B or C PC357N8J000F PC357N8TJ00F 4.0 to 20.0 B, C or D PC357N9J000F PC357N9TJ00F 6.5 to 30.0 PC357N0J000F PC357N0TJ00F A, B, C or D 4.0 to 30.0 Package Please contact a local SHARP sales representative to inquire about production status. Sheet No.: D2-A00102EN 5 PC357NJ0000F Series Fig.1 Forward Current vs. Ambient Temperature 70 60 Forward current IF (mA) 50 40 30 20 10 0 −30 Fig.2 Diode Power Dissipation vs. Ambient Temperature 120 100 80 70 60 40 20 0 −30 Diode power dissipation P (mW) 0 25 50 75 100 Ambient temperature Ta(˚C) 125 0 50 55 Ambient temperature Ta (˚C) 100 Fig.3 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) Fig.4 Total Power Dissipation vs. Ambient Temperature 300 250 200 170 150 100 50 150 100 50 0 − 30 Total power dissipation Ptot (mW) 0 25 50 75 100 Ambient temperature Ta (˚C) 125 0 − 30 0 25 50 Ambient temperature Ta (˚C) 100 Fig.5 Peak Forward Current vs. Duty Ratio 10 000 Pulse width≤100µs Ta=25˚C Peak forward current IFM (mA) Fig.6 Forward Current vs. Forward Voltage Ta=75˚C 50˚C 25˚C 0˚C −25˚C 1 000 Forward current IF (mA) 10− 3 10− 2 Duty ratio 10− 1 1 100 100 10 10 1 0 0.5 1 1.5 2 2.5 Forward voltage VF (V) 3 3.5 Sheet No.: D2-A00102EN 6 PC357NJ0000F Series Fig.7 Current Transfer Ratio vs. Forward Current 500 VCE=5V Ta=25˚C Current transfer ratio CTR (%) 400 Collector current IC (mA) 40 IF=30mA 20 mA Fig.8 Collector Current vs. Collector-emitter Voltage 50 Ta=25˚C 300 30 PC(MAX.) mA 10 200 20 5mA 100 10 0 0.1 1 10 Forward current IF (mA) 100 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 150 IF=5mA VCE=5V Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 0.16 0.14 Collector-emitter saturation voltage VCE (sat) (V) 0.12 0.1 0.08 0.06 0.04 0.02 0 −30 IF=20mA IC=1mA Relative current transfer ratio(%) 100 50 0 −30 80 60 40 0 20 Ambient temperature Ta (˚C) 100 0 20 80 60 40 Ambient temperature Ta (˚C) 100 Fig.11 Collector Dark Current vs. Ambient Temperature 10−5 VCE=50V 10−6 Collector dark current ICEO (A) 10 −7 Fig.12 Response Time vs. Load Resistance VCE=2V IC=2mA Ta=25˚C tr Response time (µs) tf 10 100 10−8 10−9 10−10 10−11 −30 td 1 ts 0 20 40 60 80 Ambient temperature Ta (˚C) 100 0.1 0.01 0.1 1 10 Load resistance RL (kΩ) Sheet No.: D2-A00102EN 7 PC357NJ0000F Series Fig.13 Test Circuit for Response Time VCC RL Collector-emitter saturation voltage VCE (sat) (V) Input Input RD Output Output 10% 90% VCE td tr Please refer to the conditions in Fig.12 ts tf Fig.14 Collector-emitter Saturation Voltage vs. Forward Current 8 Ta=25˚C 7 6 5 4 3 2 1 0 0 3 12 6 9 Forward current IF (mA) 15 IC=0.5mA 1mA 3mA 5mA 7mA Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D2-A00102EN 8 PC357NJ0000F Series ■ Design Considerations ● Design guide While operating at IF
PC357NJ0000F 价格&库存

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PC357NJ0000F
  •  国内价格
  • 760+3.75315
  • 1520+3.67192

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