A1P50S65M2-F
Datasheet
ACEPACK™ 1 sixpack topology, 650 V, 50 A,
trench gate field‑stop M series IGBT with soft diode and NTC
Features
•
ACEPACK™ 1 power module
–
DBC Cu Al2O3 Cu
•
Sixpack topology
–
650 V, 50 A IGBTs and diodes
–
Soft and fast recovery diode
Integrated NTC
•
ACEPACK™ 1
Applications
•
•
•
Inverters
Industrial
Motor drives
Description
This power module is a sixpack topology in an ACEPACK™ 1 package with NTC,
integrating the advanced trench gate field-stop technologies from
STMicroelectronics. This new IGBT technology represents the best compromise
between conduction and switching loss, to maximize the efficiency of any converter
system up to 20 kHz.
Product status
A1P50S65M2-F
Product summary
Order code
A1P50S65M2-F
Marking
A1P50S65M2-F
Package
ACEPACK™ 1
Leads type
Press fit contact pins
DS12333 - Rev 3 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
A1P50S65M2-F
Electrical ratings
1
Electrical ratings
1.1
IGBT
Limiting values at TJ = 25 °C, unless otherwise specified.
Table 1. Absolute maximum ratings of the IGBT
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
Continuous collector current (TC = 100 °C)
50
A
ICP
Pulsed collector current (tp = 1 ms)
100
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C)
208
W
TJMAX
Maximum junction temperature
175
°C
-40 to 150
°C
VCES
IC
(1)
TJop
Parameter
Operating junction temperature range under switching conditions
1. Pulse width limited by maximum junction temperature.
Table 2. Electrical characteristics of the IGBT
Symbol
Parameter
V(BR)CES
Collector-emitter
breakdown voltage
VCE(sat)
(terminal)
Collector-emitter
saturation voltage
IC = 1 mA, VGE = 0 V
Collector cut-off current
IGES
Gate-emitter leakage
current
Cies
Input capacitance
Reverse transfer
capacitance
Qg
Total gate charge
td(on)
V
V
VGE = 0 V, VCE = 650 V
100
µA
VCE = 0 V, VGE = ± 20 V
± 500
nA
VGE = 0 V
VCC = 520 V, IC = 50 A,
VGE = ±15 V
6
2.3
7
VCE = 25 V, f = 1 MHz,
5
Unit
V
2.3
ICES
Max.
650
VGE = 15 V, IC = 50 A, TJ = 150 ˚C
VCE = VGE, IC = 1 mA
Cres
Typ.
1.95
Gate threshold voltage
Output capacitance
Min.
VGE = 15 V, IC= 50 A
VGE(th)
Coes
4150
pF
170
pF
80
pF
150
nC
Turn-on delay time
VCC = 300 V, IC = 50 A,
143
ns
Current rise time
RG = 6.8 Ω, VGE = ±15 V,
16.5
ns
Eon(1)
Turn-on switching energy
di/dt = 2400 A/µs
0.140
mJ
td(off)
Turn-off delay time
VCC = 300 V, IC = 50 A,
112
ns
Current fall time
RG = 6.8 Ω, VGE = ±15 V,
149
ns
Turn-off switching energy
dv/dt = 7600 V/µs
1.45
mJ
tr
tf
Eoff(2)
DS12333 - Rev 3
Test conditions
page 2/15
A1P50S65M2-F
Diode
Symbol
td(on)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
VCC = 300 V, IC = 50 A,
148
ns
Current rise time
RG = 6.8 Ω, VGE = ±15 V,
19.2
ns
Eon
Turn-on switching energy
di/dt = 2062 A/µs, TJ = 150 °C
0.311
mJ
td(off)
Turn-off delay time
VCC = 300 V, IC = 50 A,
110
ns
Current fall time
RG = 6.8 Ω, VGE = ±15 V,
221
ns
Turn-off switching energy
dv/dt = 5800 V/µs, TJ = 150 °C
1.98
mJ
Short-circuit withstand
time
VCC ≤ 360 V, VGE ≤ 15 V,
tr
(1)
tf
Eoff(2)
tSC
6
TJstart ≤ 150 °C
µs
RTHj-c
Thermal resistance
junction-to-case
Each IGBT
0.65
RTHc-h
Thermal resistance caseto-heatsink
Each IGBT, λgrease = 1 W/(m·°C)
0.79
0.72
°C/W
°C/W
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
1.2
Diode
Limiting values at TJ = 25 °C, unless otherwise specified.
Table 3. Absolute maximum ratings of the diode
Symbol
Value
Unit
Repetitive peak reverse voltage
650
V
Continuous forward current at (TC = 100 °C)
50
A
IFP
Pulsed forward current (tp = 1 ms)
100
A
TJMAX
Maximum junction temperature
175
°C
-40 to 150
°C
VRRM
IF
(1)
TJop
Parameter
Operating junction temperature range under switching conditions
1. Pulse width limited by maximum junction temperature.
Table 4. Electrical characteristics of the diode
Symbol
VF (terminal)
DS12333 - Rev 3
Parameter
Forward voltage
Test conditions
Min.
Typ.
Max.
Unit
IF = 50 A
-
1.85
2.65
IF = 50 A, TJ = 150 ˚C
-
1.65
-
142
ns
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 50 A, VR = 300 V,
-
1.87
µC
Irrm
Reverse recovery current
VGE = ±15 V, di/dt = 2400 A/μs
-
40
A
Erec
Reverse recovery energy
-
0.41
mJ
-
260
ns
-
5.2
µC
-
58
A
-
1.32
mJ
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
Erec
Reverse recovery energy
IF = 50 A, VR = 300 V,
VGE = ±15 V, di/dt = 2062 A/μs,
TJ = 150 °C
page 3/15
A1P50S65M2-F
NTC
Symbol
1.3
Parameter
Test conditions
Min.
Typ.
Max.
Unit
1.1
°C/W
RTHj-c
Thermal resistance
junction-to-case
Each diode
-
1.0
RTHc-h
Thermal resistance caseto-heatsink
Each diode, λgrease = 1 W/(m·°C)
-
0.9
°C/W
NTC
Table 5. NTC temperature sensor, considered as stand-alone
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
R25
Resistance
T = 25°C
5
kΩ
R100
Resistance
T = 100°C
493
Ω
ΔR/R
Deviation of R100
B25/50
B-constant
3375
K
B25/80
B-constant
3411
K
T
-5
Operating temperature range
-40
Figure 1. NTC resistance vs temperature
R
(Ω)
+5
GADG260720171142NTC
%
150
°C
Figure 2. NTC resistance vs temperature, zoom
R
(Ω)
GADG260720171151NTCZ
800
max
10 4
700
600
10 3
min
500
typ
400
10 2
1.4
0
25
50
75
100
125
TC (°C)
300
85
90
95
100
105
110
TC (°C)
Package
Table 6. ACEPACK™ 1 package
Symbol
DS12333 - Rev 3
Parameter
Min.
Visol
Isolation voltage (AC voltage, t = 60 s)
Tstg
Storage temperature
-40
CTI
Comparative tracking index
200
Typ.
Max.
Unit
2500
Vrms
125
°C
Ls
Stray inductance module P1 - EW loop
28.7
nH
Rs
Module single lead resistance, terminal-to-chip
3.9
mΩ
page 4/15
A1P50S65M2-F
Electrical characteristics (curves)
2
Electrical characteristics (curves)
Figure 3. IGBT output characteristics
(VGE = 15 V, terminal)
Ic
(A)
80
IGBT111020170929TCH
Figure 4. IGBT output characteristics
(TJ = 150 °C, terminal)
IC
(A)
90
IGBT101020171341OC25
19 V
17 V
80
TJ = 25 °C
15 V
70
60
13 V
11 V
60
TJ = 150 °C
50
40
40
30
20
VGE = 9 V
20
10
0
0
1
2
3
4
VCE (V)
Figure 5. IGBT transfer characteristics
(VCE = 15 V, terminal)
IC
(A)
IGBT101020171339OC25
0
0
1
2
3
4
VCE (V)
Figure 6. IGBT collector current vs case temperature
IC
(A)
IGBT051120181512CCT
100
80
80
TJ = 25 °C
60
60
40
40
TJ = 150 °C
20
20
0
5
DS12333 - Rev 3
6
7
8
9
10
11
12
VGE (V)
0
0
VCC = 15 V, TJ ≤ 175 °C
25
50
75
100
125
150
TC (°C)
page 5/15
A1P50S65M2-F
Electrical characteristics (curves)
Figure 7. Switching energy vs gate resistance
E
(mJ)
IGBT101020171348SLG
VCC = 300 V, IC = 50 A, VGE = ±15 V
4.0
3.0
EON (TJ = 150 °C)
EOFF (TJ = 150 °C)
Figure 8. Switching energy vs collector current
IGBT101020171351SLC
E
(mJ) VCC = 300 V, RG = 6.8 Ω, VGE = ±15 V
EOFF (TJ = 150 °C)
3
EON (TJ = 25 °C)
EOFF (TJ = 25 °C)
2
2.0
EOFF (TJ = 25 °C)
1.0
0
0
EON (TJ = 150°C)
1
EON (TJ = 25 °C)
20
40
60
80
RG (Ω)
Figure 9. IGBT reverse biased safe operating area
(RBSOA)
IGBT101020171353OC25
IC
(A) TJ = 125 °C, VGE = ±15 V, RG = 6.8 Ω
0
10
30
50
70
90
IC (A)
Figure 10. Diode forward characteristics
IGBT101020171356DVF
IF
(A)
80
50
40
TJ = 150 °C
60
30
40
20
TJ = 25 °C
20
10
0
0
100
200
300
400
500
600
VCE (V)
Figure 11. Diode reverse recovery energy vs diode current
slope
IGBT101020171356OC25
Erec
(mJ) VCE = 300 V, VGE = ±15 V, IF = 50 A
1.2
TJ = 150 °C
0.8
1.2
1.6
2.0
VF (V)
Figure 12. Diode reverse recovery energy vs forward
current
IGBT101020171402RRE
Erec
(mJ) VCE = 300 V, VGE = ±15 V, RG = 6.8 Ω
TJ = 150 °C
1.2
0.6
0.8
0.3
DS12333 - Rev 3
0.4
1.6
0.9
0
200
0
0
0.4
TJ = 25 °C
750
1300
1850
di/dt (A/µs)
0
10
TJ = 25 °C
30
50
70
90
IF (A)
page 6/15
A1P50S65M2-F
Electrical characteristics (curves)
Figure 13. Diode reverse recovery energy vs gate
resistance
Erec
(mJ)
Figure 14. Inverter diode thermal impedance
Zth
(°C/W)
IGBT101020171406RRE
VCE = 300 V, VGE = ±15 V, IF = 50 A
IGBT111020170844MT
1.2
Zth(typ.)JH
TJ = 150 °C
0.9
100
Zth(max.)JC
0.6
JC
i
ri (˚C/W)
τi(s)
TJ = 25 °C
0.3
JH
i
ri (˚C/W)
0
0
20
40
60
80
10-1
10-3
RG (Ω)
τi(s)
10-2
RC - Foster thermal network
1
2
3
4
0.1746
0.5169
0.2851
0.1197
0.0008
0.0074
0.0368
0.2601
RC - Foster thermal network
1
2
3
4
0.2091 0.5735
0.7511
0.3615
0.0010
10-1
0.0116
0.0729
100
0.3310
t (s)
Figure 15. IGBT thermal impedance
Zth
(°C/W)
IGBT111020170846MT
Zth(typ.)JH
10 0
Zth(max.)JC
JC
i
ri (˚C/W)
τi(s)
JH
i
10 -1
10 -3
DS12333 - Rev 3
ri (˚C/W)
τi(s)
10 -2
RC - Foster thermal network
1
2
3
4
0.0718 0.2858 0.2471 0.1130
0.0002 0.0072 0.0392 0.2850
RC - Foster thermal network
1
2
3
4
0.0808 0.3144 0.6701 0.3713
0.0003 0.0113 0.0752 0.3492
10 -1
10 0
t (s)
page 7/15
A1P50S65M2-F
Test circuits
3
Test circuits
Figure 16. Test circuit for inductive load switching
C
A
Figure 17. Gate charge test circuit
A
k
L=100 µH
G
E
B
B
3.3
µF
C
G
+
k
RG
1000
µF
VCC
k
D.U.T
k
E
k
k
AM01505v1
AM01504v1
Figure 19. Diode reverse recovery waveform
Figure 18. Switching waveform
90%
10%
VG
90%
VCE
10%
Tr(Voff)
Tcross
25
90%
IC
Td(on)
Ton
10%
Td(off)
Tr(Ion)
Tf
Toff
AM01506v1
DS12333 - Rev 3
page 8/15
A1P50S65M2-F
Topology and pin description
4
Topology and pin description
Figure 20. Electrical topology and pin description
P
G3
G1
G5
T1
U
V
W
T2
G4
G2
E’U
EU
E’V
G6
EV
E’W
EW
Figure 21. Package top view with sixpack pinout
DS12333 - Rev 3
page 9/15
A1P50S65M2-F
Package information
5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS12333 - Rev 3
page 10/15
A1P50S65M2-F
ACEPACK™ 1 sixpack press fit pins package information
5.1
ACEPACK™ 1 sixpack press fit pins package information
Figure 22. ACEPACK™ 1 sixpack press fit pins package outline (dimensions are in mm)
32.00
E'W EW
EV
G4
E'V EU
G6
28.80
E'U
25.60
G2
T1
T2
22.40
P
16.00
P
12.80
W
U
W
U
V
V
G3
G5
6.40
G1
3.20
0.00
16.4±0.50
12±0.35
0.00
3.20
6.40
9.60
16.00
19.20
22.40
25.60
3.2 BSC
33.8±0.3
28.1±0.2
Section B-B
8.5
16.4±0.2
B
53±0.1
42.5±0.2
41±0.2
62.8±0.5
48±0.3
B
3.2 BSC
36.8 REF
2.3 REF
19.4±0.2
1.3±0.2
Detail A
2.5±0.2
A
A
3.5 REF x45°
4.5±0.1
GADG260220181307MT_8569715_4
•
•
•
DS12333 - Rev 3
The lead size includes the thickness of the lead plating material.
Dimensions do not include mold protrusion.
Package dimensions do not include any eventual metal burrs.
page 11/15
A1P50S65M2-F
ACEPACK™ 1 sixpack press fit pins package information
Figure 23. ACEPACK™ 1 sixpack press fit pins recommended PCB holes layout (dimensions are in mm)
GADG260220181409MT_8569715_4
DS12333 - Rev 3
page 12/15
A1P50S65M2-F
Revision history
Table 7. Document revision history
Date
Revision
11-Oct-2017
1
Changes
Initial release.
Removed maturity status indication from cover page.
The document status is production data.
01-Mar-2018
2
Updated silhouette in cover page, Figure 13. Inverter diode thermal impedance,
Figure 14. IGBT thermal impedance and Section 5.1 ACEPACK™ 1 sixpack press
fit pins package information.
Minor text changes.
14-Nov-2018
DS12333 - Rev 3
3
Added Figure 6. IGBT collector current vs case temperature.
Minor text changes
page 13/15
A1P50S65M2-F
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.2
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3
NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.4
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4
Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
5.1
ACEPACK™ 1 sixpack press fit pins package information . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS12333 - Rev 3
page 14/15
A1P50S65M2-F
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
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Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS12333 - Rev 3
page 15/15