A2C50S65M2

A2C50S65M2 Datasheet ACEPACK™ 2 converter inverter brake, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC Features • ACEPACK™ 2 power module – DBC Cu Al2O3 Cu • Converter inverter brake topology – 1600 V, very low drop rectifiers for converter – 650 V, 50 A IGBTs and diodes – Soft and fast recovery diode Integrated NTC • ACEPACK™ 2 Applications • • Inverters Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 2 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A2C50S65M2 Product summary Order code A2C50S65M2 Marking A2C50S65M2 Package ACEPACK™ 2 Leads type Solder contact pins DS12340 - Rev 3 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com A2C50S65M2 Electrical ratings 1 Electrical ratings 1.1 Inverter stage Limiting values at TJ = 25 °C, unless otherwise specified. 1.1.1 IGBTs Table 1. Absolute maximum ratings of the IGBTs, inverter stage Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current (TC = 100 °C) 50 A ICP Pulsed collector current (tp = 1 ms) 100 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 208 W TJMAX Maximum junction temperature 175 °C -40 to 150 °C VCES IC (1) TJop Description Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature Table 2. Electrical characteristics of the IGBTs, inverter stage Symbol V(BR)CES Collector-emitter breakdown voltage VCE(sat) (terminal) Collector-emitter saturation voltage Test conditions IC = 1 mA, VGE = 0 V Min. Typ. Max. Unit 650 V VGE = 15 V, IC= 50 A 1.95 VGE = 15 V, IC = 50 A, TJ = 150 ˚C 2.3 2.3 V V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current VGE = 0 V, VCE = 650 V 100 μA IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±500 nA Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg td(on) tr Eon(1) DS12340 - Rev 3 Parameter VCE = 25 V, f = 1 MHz, VGE = 0 V 5 6 7 V 4150 pF 170 pF 80 pF Total gate charge VCC = 520 V, IC = 50 A, VGE = ±15 V 150 nC Turn-on delay time VCC = 300 V, IC = 50 A, 147 ns Current rise time RG = 6.8 Ω, VGE = ±15 V, 17.5 ns Turn-on switching energy di/dt = 2320 A/µs 0.147 mJ page 2/16 A2C50S65M2 Inverter stage Symbol td(off) Parameter Test conditions Min. Typ. Max. Unit Turn-off delay time VCC = 300 V, IC = 50 A, 105 ns Current fall time RG = 6.8 Ω, VGE = ±15 V, 133 ns Eoff Turn-off switching energy dv/dt = 7400 V/µs 1.36 mJ td(on) Turn-on delay time VCC = 300 V, IC = 50 A, 147 ns Current rise time RG = 6.8 Ω, VGE = ±15 V, 20 ns Eon(1) Turn-on switching energy di/dt = 2010 A/µs, TJ = 150 °C 0.318 mJ td(off) Turn-off delay time VCC = 300 V, IC = 50 A, 104 ns Current fall time RG = 6.8 Ω, VGE = ±15 V, 194 ns Turn-off switching energy dv/dt = 6000 V/µs, TJ = 150 °C 1.82 mJ Short-circuit withstand time VCC ≤ 360 V, VGE ≤ 15 V, TJstart ≤ 150 °C RTHj-c Thermal resistance junction-tocase Each IGBT 0.65 RTHc-h Thermal resistance case-toheatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 tf (2) tr tf Eoff(2) tSC 6 µs 0.72 °C/W °C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. 1.1.2 Diode Limiting values at TJ = 25 °C, unless otherwise specified. Table 3. Absolute maximum ratings of the diode, inverter stage Symbol Value Unit Repetitive peak reverse voltage 650 V Continuous forward current (TC = 100 °C) 50 A IFP Pulsed forward current (tp = 1 ms) 100 A TJMAX Maximum junction temperature 175 °C -40 to 150 °C VRRM IF (1) TJop Parameter Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature Table 4. Electrical characteristics of the diode, inverter stage Symbol VF (terminal) DS12340 - Rev 3 Parameter Forward voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy Test conditions Min. Typ. Max. IF = 50 A - 1.85 2.65 IF = 50 A, TJ = 150 ˚C - 1.65 - 155 ns - 2.32 µC - 41 A - 0.53 mJ IF = 50 A, VR = 300 V, VGE = ±15 V, diF/dt = 2320 A/μs Unit V page 3/16 A2C50S65M2 Brake stage Symbol 1.2 Parameter trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy Test conditions IF = 50 A, VR = 300 V, VGE = ±15 V, diF/dt = 2010 A/μs, TJ = 150 °C Min. Typ. Max. Unit - 270 ns - 5.98 µC - 62 A - 1.6 mJ RTHj-c Thermal resistance junction-tocase Each diode - 1.0 RTHc-h Thermal resistance case-toheatsink Each diode, λgrease = 1 W/(m·°C) - 0.9 °C/W Value Unit Collector-emitter voltage (VGE = 0) 650 V Continuous collector current (TC = 100 °C) 50 A ICP(1) Pulsed collector current (tp = 1 ms) 100 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 208 W TJMAX Maximum junction temperature 175 °C -40 to 150 °C 1.1 °C/W Brake stage Limiting values at TJ = 25 °C, unless otherwise specified. 1.2.1 IGBT Table 5. Absolute maximum ratings of the IGBT, brake stage Symbol VCES IC TJop Parameter Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature Table 6. Electrical characteristics of the IGBT, brake stage Symbol V(BR)CES Collector-emitter breakdown voltage VCE(sat) (terminal) Collector-emitter saturation voltage Test conditions IC = 1 mA, VGE = 0 V Collector cut-off current IGES Gate-emitter leakage current Cies Input capacitance Cres Reverse transfer capacitance Total gate charge V VGE = 0 V, VCE = 650 V 100 µA VCE = 0 V, VGE = ±20 V ± 500 nA VCC = 520 V, IC = 50 A, VGE = ±15 V 6 V 7 VCE = 25 V, f = 1 MHz, VGE = 0 V 5 Unit V 2.3 ICES Max. 650 VGE = 15 V, IC = 50 A, TJ = 150 ˚C VCE = VGE, IC = 1mA Output capacitance Typ. 1.95 Gate threshold voltage Coes Min. VGE = 15 V, IC = 50 A VGE(th) Qg DS12340 - Rev 3 Parameter 4150 pF 170 pF 80 pF 150 nC page 4/16 A2C50S65M2 Brake stage Symbol td(on) Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VCC = 300 V, IC = 50 A, 147 ns Current rise time RG = 6.8 Ω, VGE = ±15 V, 17.5 ns Eon Turn-on switching energy di/dt = 2320 A/µs 0.147 mJ td(off) Turn-off delay time VCC = 300 V, IC = 50 A, 105 ns Current fall time RG = 6.8 Ω, VGE = ±15 V, 133 ns Eoff(2) Turn-off switching energy dv/dt = 7400 V/µs 1.36 mJ td(on) Turn-on delay time VCC = 300 V, IC = 50 A, 147 ns Current rise time RG = 6.8 Ω, VGE = ±15 V, 20 ns Eon(1) Turn-on switching energy di/dt = 2010 A/µs, TJ = 150 °C 0.318 mJ td(off) Turn-off delay time VCC = 300 V, IC = 50 A, 104 ns Current fall time RG = 6.8 Ω, VGE = ±15 V, 194 ns Turn-off switching energy dv/dt = 6000 V/µs, TJ = 150 °C 1.82 mJ Short-circuit withstand time VCC ≤ 360 V, VGE≤ 15 V, TJstart ≤ 150 °C RTHj-c Thermal resistance junction-to case Each IGBT 0.65 RTHc-h Thermal resistance case-toheatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 tr (1) tf tr tf Eoff(2) tSC 6 µs 0.72 °C/W °C/W 1. Including the reverse recovery of the diode 2. Including the tail of the collector current 1.2.2 Diode Table 7. Absolute maximum ratings of the diode, brake stage Symbol VRRM IF IFP (1) TJMAX TJop Parameter Value Unit Repetitive peak reverse voltage 650 V Continuous forward current (TC = 100 °C) 50 A Pulsed forward current (tp = 1 ms) 100 A Maximum junction temperature 175 °C -40 to 150 °C Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature. Table 8. Electrical characteristics of the diode, brake stage Symbol VF (terminal) DS12340 - Rev 3 Parameter Forward voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy Test conditions Min. Typ. IF = 50 A - 1.85 IF = 50 A, TJ = 150 ˚C - 1.65 - 155 ns - 2.32 µC - 41 A - 0.53 mJ IF = 50 A, VR = 300 V, VGE = ±15 V, di/dt = 2320 A/μs Max. Unit V page 5/16 A2C50S65M2 Converter stage Symbol 1.3 Parameter trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy Test conditions IF = 50 A, VR = 300 V, VGE = ±15 V, di/dt = 2010 A/μs, TJ = 150 °C Min. Typ. - 270 ns - 5.98 µC - 62 A - 1.6 mJ RTHj-c Thermal resistance junction-tocase Each diode - RTHc-h Thermal resistance case-toheatsink Each diode, λgrease = 1 W/(m·°C) - 1.0 Max. 1.1 0.9 Unit °C/W °C/W Converter stage Limiting values at TJ = 25 °C, unless otherwise specified. Table 9. Absolute maximum ratings of the bridge rectifiers Symbol VRRM IF IFSM I2t TJMAX TJop Description Value Unit 1600 V RMS forward current 50 A Forward surge current tp = 10 ms, TC = 25 °C 450 Forward surge current tp = 10 ms, TC = 150 °C 365 tp = 10 ms, TC = 25 °C 1012 tp = 10 ms, TC = 150 °C 666 Maximum junction temperature 175 °C -40 to 150 °C Repetitive peak reverse voltage Operating junction temperature range under switching conditions A A2s Table 10. Electrical characteristics of the bridge rectifiers Symbol DS12340 - Rev 3 Parameter Test conditions Min. Typ. Max. IF = 50 A - 1.23 1.6 IF = 50 A, TJ = 150 ˚C - 1.14 VF (terminal) Forward voltage IR Reverse current TJ = 150 ˚C, VR = 1600 V - 1 RTHj-c Thermal resistance junction-tocase Each diode - 1.00 RTHc-h Thermal resistance case-toheatsink Each diode, λgrease = 1 W/(m·°C) - 0.95 Unit V mA 1.10 °C/W °C/W page 6/16 A2C50S65M2 NTC 1.4 NTC Table 11. NTC temperature sensor, considered as stand-alone Symbol Parameter Test conditions Min. Typ. Max. Unit R25 Resistance T = 25 °C 5 kΩ R100 Resistance T = 100 °C 493 Ω ΔR/R Deviation of R100 B25/50 B-constant 3375 K B25/80 B-constant 3411 K T -5 Operating temperature range -40 Figure 1. NTC resistance vs temperature R (Ω) +5 GADG260720171142NTC % 150 °C Figure 2. NTC resistance vs temperature, zoom R (Ω) GADG260720171151NTCZ 800 max 10 4 700 600 10 3 min 500 typ 400 10 2 1.5 0 25 50 75 100 125 TC (°C) 300 85 90 95 100 105 110 TC (°C) Package Table 12. ACEPACK™ 2 package Symbol DS12340 - Rev 3 Parameter Min. Visol Isolation voltage (AC voltage, t = 60 s) Tstg Storage temperature -40 CTI Comparative tracking index 200 Typ. Max. Unit 2500 Vrms 125 °C Ls Stray inductance module P1 - EW loop 33.5 nH Rs Module single lead resistance, terminal to chip 3.6 mΩ page 7/16 A2C50S65M2 Electrical characteristics (curves) 2 Electrical characteristics (curves) Figure 3. IGBT output characteristics (VGE = 15 V, terminal) Ic (A) 80 IGBT111020170929TCH Figure 4. IGBT output characteristics (TJ = 150 °C ,terminal) IC (A) 90 IGBT101020171341OC25 19 V 17 V 80 TJ = 25 °C 15 V 70 60 13 V 11 V 60 TJ = 150 °C 50 40 40 30 20 VGE = 9 V 20 10 0 0 1 2 3 4 VCE (V) Figure 5. IGBT transfer characteristics (VCE = 15 V, terminal) IC (A) IGBT101020171339OC25 0 0 1 2 3 4 VCE (V) Figure 6. IGBT collector current vs case temperature IC (A) IGBT051120181512CCT 100 80 80 TJ = 25 °C 60 60 40 40 TJ = 150 °C 20 20 0 5 DS12340 - Rev 3 6 7 8 9 10 11 12 VGE (V) 0 0 VCC = 15 V, TJ ≤ 175 °C 25 50 75 100 125 150 TC (°C) page 8/16 A2C50S65M2 Electrical characteristics (curves) Figure 7. Switching energy vs gate resistance E (mJ) IGBT161020171415SLG VCC = 300 V, IC = 50 A, VGE = ±15 V 4 3 EON (TJ = 150°C) Figure 8. Switching energy vs collector current IGBT161020171419SLC E (mJ) VCC = 300 V, RG = 6.8 Ω, VGE = 15 V 3 EOFF (TJ = 150°C) EOFF (TJ = 150°C) 2 EOFF (TJ = 25°C) 2 EON (TJ = 25°C) EOFF (TJ = 25°C) 1 0 0 1 EON (TJ = 150°C) EON (TJ = 25°C) 20 40 60 80 RG (Ω) Figure 9. IGBT reverse biased safe operating area (RBSOA) IGBT101020171353OC25 IC (A) TJ = 125 °C, VGE = ±15 V, RG = 6.8 Ω 0 10 30 50 70 90 IC (A) Figure 10. Diode forward characteristics (terminal) IGBT101020171356DVF IF (A) 80 50 40 TJ = 150 °C 60 30 40 20 TJ = 25 °C 20 10 0 0 100 200 300 400 500 600 VCE (V) Figure 11. Diode reverse recovery energy vs diode current slope Erec (mJ) IGBT161020171422RRE VCE = 300 V, VGE = ±15 V, IF = 50 A 1.5 0 0 1.2 1.6 2.0 VF (V) Figure 12. Diode reverse recovery energy vs forward current IGBT161020171427DVF Erec (mJ) VCE = 300 V, RG = 6.8 Ω, VGE = ±15 V 1.6 TJ =150°C 0.9 1.2 0.6 0.8 0.3 DS12340 - Rev 3 0.8 2.0 1.2 0 200 0.4 1300 TJ = 25 °C 0.4 TJ =25°C 750 TJ = 150 °C 1850 di/dt (A/µs) 0 10 30 50 70 90 IF (A) page 9/16 A2C50S65M2 Electrical characteristics (curves) Figure 13. Diode reverse recovery energy vs gate resistance Erec (mJ) IGBT161020171430SLG VCE = 300 V, IF = 50 A, VGE = ±15 V 1.5 Figure 14. Converter diode forward characteristics (terminal) IF (A) IGBT161020171431DVF 80 TJ = 150 °C 1.2 60 0.9 TJ = 150 °C 40 0.6 TJ = 25 °C 20 0.3 0 0 20 40 60 80 Figure 15. IGBT thermal impedance Zth (°C/W) 0 0 RG (Ω) IGBT161020171434ZTH TJ = 25 °C 0.4 0.8 Zth (°C/W) IGBT161020171435ZTHMT Zth (typ.) JH JC RC - Foster thermal network ri (˚C/W) τi(s) 1 0.0781 0.0002 JH i 10 -1 10 -3 DS12340 - Rev 3 10 0 Zth (max.) JC i τi(s) 3 0.2348 0.0344 Zth (max.) JC JC 4 0.1033 0.2723 1 0.0832 0.0003 10 -1 2 0.3154 0.0104 3 0.6593 0.0701 τi(s) JH 10 0 4 0.3770 0.3228 i ri (˚C/W) t (s) 10 -1 10 -3 RC - Foster thermal network 1 i ri (˚C/W) RC - Foster thermal network ri (˚C/W) 10 -2 2 0.2997 0.0065 VF (V) Figure 16. Inverter diode thermal impedance Zth (typ.) JH 10 0 1.2 τi(s) 10 -2 0.1741 0.0008 2 0.4993 0.0076 3 0.2989 0.0405 RC - Foster thermal network 1 0.2109 0.0010 10 -1 2 0.5538 0.0126 0.7885 0.0785 10 0 4 0.1226 0.2723 3 4 0.3415 0.3410 t (s) page 10/16 A2C50S65M2 Test circuits 3 Test circuits Figure 17. Test circuit for inductive load switching C A Figure 18. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 20. Diode reverse recovery waveform Figure 19. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 25 90% IC Td(on) Ton 10% Td(off) Tr(Ion) Tf Toff AM01506v1 DS12340 - Rev 3 page 11/16 A2C50S65M2 Topology and pin description 4 Topology and pin description Figure 21. Electrical topology and pin description P P1 B T1 L1 L2 G5 G3 G1 U V W GB L3 G6 G4 G2 T2 EU NB N EV EW Figure 22. Package top view with CIB pinout W W G3 V V G1 U U L3 L3 G5 L2 P1 P1 L2 T2 L1 T1 B EW EW G6 EV EV G4 EU EU G2 NB GB DS12340 - Rev 3 L1 P P N N page 12/16 A2C50S65M2 Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5.1 ACEPACK™ 2 CIB solder pins package information Figure 23. ACEPACK™ 2 CIB solder pins package outline (dimensions are in mm) 32.00 28.80 25.60 W W G3 V V G1 U L3 U L3 G5 22.40 L2 P1 P1 L2 T2 19.20 L1 T1 16.00 L1 B EW EW G6 EV EV G4 EU EU G2 NB GB P P N N 12.80 9.60 15.5±0.5 48.00 38.40 44.80 □0.64±0.03 12±0.35 3.2 BSC 41.60 35.20 32.00 28.80 22.40 25.60 19.20 12.80 16.00 6.40 9.60 3.20 0.00 0.00 Detail A 3.5 REF x45° A A 56.7±0.3 51±0.15 22.7±0.3 1.3±0.2 16.4±0.2 2.3 REF 2.5±0.2 3.2 BSC 53±0.1 42.5±0.2 37 REF 48±0.3 62.8±0.5 8.5 4.5±0.1 52.7 REF 8569722_ACEPACK2_CIB_solderable_pins • • • DS12340 - Rev 3 The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. page 13/16 A2C50S65M2 Revision history Table 13. Document revision history Date Revision 16-Oct-2017 1 Changes Initial release Removed maturity status indication from cover page. The document status is production data. Updated features on cover page. Updated Table 10. Electrical characteristics of the bridge rectifiers. 02-Mar-2018 2 Updated Figure 15. IGBT thermal impedance and Figure 16. Inverter diode thermal impedance. Updated Figure 23. ACEPACK™ 2 CIB solder pins package outline (dimensions are in mm). Minor text changes 19-Nov-2018 DS12340 - Rev 3 3 Added Section STPOWER LOGO and Figure 6. IGBT collector current vs case temperature. page 14/16 A2C50S65M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.1 1.2 Inverter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.1.1 IGBTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Brake stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.2.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.2.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.3 Converter stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.4 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.5 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 5.1 ACEPACK™ 2 CIB solder pins package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 @NA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 DS12340 - Rev 3 page 15/16 A2C50S65M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS12340 - Rev 3 page 16/16