STF12N120K5

STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and TO-3PF packages Datasheet - production data Features Order code VDS RDS(on) max. ID 1200 V 0.69 Ω 12 A STF12N120K5       TO-220FP 40 W STFW12N120K5  PTOT 63 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge TO-3PF • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram Applications • Switching applications ' Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. * 6 $0Y Table 1. Device summary Order code Marking STF12N120K5 Packages Packing TO-220FP 12N120K5 STFW12N120K5 May 2015 This is information on a product in full production. Tube TO-3PF DocID026396 Rev 2 1/16 www.st.com Contents STF12N120K5, STFW12N120K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 2/16 .............................................. 9 4.1 TO-220FP, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-3PF, package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 DocID026396 Rev 2 STF12N120K5, STFW12N120K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP VGS Gate-source voltage TO-3PF ± 30 V ID Drain current at TC = 25 °C 12 A ID Drain current at TC = 100 °C 7.6 A Drain current (pulsed) 48 A IDM (1) PTOT Total dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) IAR (2) Max current during repetitive or single pulse avalanche EAS (3) dv/dt (4) dv/dt (5) Tj Tstg 40 63 W 2500 3500 V 4 A Single pulse avalanche energy 215 mJ Peak diode recovery voltage slope 4.5 V/ns MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area. 2. Pulse width limited by TJmax. 3. Starting TJ = 25 °C, ID=IAS, VDD= 50 V 4. ISD ≤ 12 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS 5. VDS ≤ 960 V Table 3. Thermal data Value Symbol Parameter Unit TO-220FP TO-3PF Rthj-case Thermal resistance junction-case max 3.1 1.98 °C/W Rthj-amb Thermal resistance junction-amb max 62.5 50 °C/W DocID026396 Rev 2 3/16 16 Electrical characteristics 2 STF12N120K5, STFW12N120K5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage, (VGS= 0) ID = 1 mA Min. Typ. Max. 1200 Unit V VDS = 1200 V 1 µA VDS = 1200 V, Tc=125 °C 50 µA Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID= 6 A 0.62 0.69 Ω Min. Typ. Max. Unit - 1370 - pF - 110 - pF IDSS Zero gate voltage drain current (VGS = 0) IGSS 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 0.6 - pF Co(tr)(1) Equivalent capacitance, time-related - 128 - pF (2) Equivalent capacitance, energy-related - 42 - pF Co(er) VDS =100 V, f=1 MHz, VGS=0 VGS = 0, VDS = 0 to 960 V RG Intrinsic gate resistance f = 1 MHz, ID = 0 - 3.5 - Ω Qg Total gate charge - 44.2 - nC Qgs Gate-source charge - 7.3 - nC Qgd Gate-drain charge VDD = 960 V, ID = 6 A VGS =10 V (see Figure 18) - 30 - nC 1. Time-related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy-related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/16 DocID026396 Rev 2 STF12N120K5, STFW12N120K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 600 V, ID = 6 A, RG=4.7 Ω, VGS=10 V (see Figure 20) Rise time td(off) tf Turn-off delay time Fall time Min. Typ. Max. Unit - 23 - ns - 11 - ns - 68.5 - ns - 18.5 - ns Min. Typ. Max. Unit Table 7. Source drain diode Symbol ISD ISDM VSD 1. (1) Parameter Test conditions Source-drain current - 12 A Source-drain current (pulsed) - 48 A 1.5 V Forward on voltage ISD= 12 A, VGS=0 - trr Reverse recovery time - 630 ns Qrr Reverse recovery charge - 12.6 µC IRRM Reverse recovery current ISD= 12 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 19) - 40 A - 892 ns - 15.6 µC - 35 A Min Typ. trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD= 12 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C (see Figure 19) Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter V(BR)GSO Gate-source breakdown voltage Test conditions IGS = ±1 mA, ID = 0 30 Max. - Unit V The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. DocID026396 Rev 2 5/16 16 Electrical characteristics 2.1 STF12N120K5, STFW12N120K5 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP *,3*6$ ,' $  RQ 2S /LP HUD LWH WLRQ G LQ E\ WK P LV D[ DU 5 HD '  LV  6 —V  —V PV PV  7M ƒ& 7F ƒ& 6LQJOHSXOVH       9'69 Figure 4. Safe operating area for TO-3PF *,3*6$ ,' $ Figure 5. Thermal impedance for TO-3PF =WKB723) .  —V   6 RQ 2S /LP HUD LWH WLRQ G LQ E\ WK P LV D[ DU 5 HD '  LV   —V PV      PV   7M ƒ& 7F ƒ& 6LQJOHSXOVH      6LQJOHSXOVH   9'69 Figure 6. Output characteristics 9*6 9 9            W SV Figure 7. Transfer characteristics *,3*6$ ,' $    *,3*6$ ,' $ 9'6 9    9     9   6/16     9'69 DocID026396 Rev 2      9*69 STF12N120K5, STFW12N120K5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage *,3*6$ 9'6 9*6 9 9 9'' 9 ,' $   Figure 9. Static drain-source on-resistance *,3'07 5'6RQ ȍ 9*6 9  9'6                    4JQ& Figure 10. Capacitance variations       ,'$ Figure 11. Output capacitance stored energy *,3'07 & S)  *,3*6$ (RVV —-   &LHV     &RHV  &UHV           9'69 Figure 12. Normalized gate threshold voltage vs temperature *,3*6$ 9*6WK QRUP       9'69 Figure 13. Normalized on-resistance vs temperature *,3*6$ 5'6RQ QRUP ,' —$ 9*6 9                7-ƒ& DocID026396 Rev 2       7-ƒ& 7/16 16 Electrical characteristics STF12N120K5, STFW12N120K5 Figure 14. Normalized V(BR)DSS vs temperature *,3*6$ 9%5'66 QRUP Figure 15. Source-drain diode forward characteristics *,3*6$ 96' 9 7- ƒ& ,' P$   7- ƒ&    7- ƒ&          7-ƒ& Figure 16. Maximum avalanche energy vs starting TJ *,3*6$ ($6 P- ,' $ 9'' 9       8/16     7-ƒ& DocID026396 Rev 2      ,6'$ STF12N120K5, STFW12N120K5 3 Test circuits Test circuits Figure 17. Switching time test circuit for resistive load Figure 18. Gate charge test circuit 9'' 9 N N Q)  )  5/ ) ,* &2167 9'' 9*6  9L 9 9*0$; 9' 5*  ) '87 '87 9* N 3: N N 3: $0Y Figure 19. Test circuit for inductive load switching and diode recovery times $ $ '87 )$67 ',2'( % % $0Y Figure 20. Unclamped inductive load test circuit / $ ' * 6 9' / +  ) %   ) ' 9''  )  ) 9'' ,' * 5* 6 9L '87 3Z $0Y $0Y Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform W RQ 9%5'66 WG RQ 9' W RII WU WG RII   ,'0 WI  ,' 9''   9'' 9'6  9*6 $0Y  DocID026396 Rev 2  $0Y 9/16 16 Package information 4 STF12N120K5, STFW12N120K5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 DocID026396 Rev 2 STF12N120K5, STFW12N120K5 4.1 Package information TO-220FP, package information Figure 23. TO-220FP package outline B5HYB.B% DocID026396 Rev 2 11/16 16 Package information STF12N120K5, STFW12N120K5 Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/16 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 DocID026396 Rev 2 STF12N120K5, STFW12N120K5 4.2 Package information TO-3PF, package outline Figure 24. TO-3PF package outline B' DocID026396 Rev 2 13/16 16 Package information STF12N120K5, STFW12N120K5 Table 10. TO-3PF mechanical data mm Dim. Min. Typ. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 14/16 Max. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 ∅ 3.40 3.80 10 DocID026396 Rev 2 10.20 STF12N120K5, STFW12N120K5 5 Revision history Revision history Table 11. Document revision history Date Revision 22-May-2014 1 First release. Part number (STFW12N120K5) previously included in datasheet DocID022133 2 Updated title, features and description. Updated Table 4.: On/off states and Table 5.: Dynamic. Updated Figure 9.: Static drain-source on-resistance and Figure 10.: Capacitance variations Minor text changes. 11-May-2015 Changes DocID026396 Rev 2 15/16 16 STF12N120K5, STFW12N120K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 16/16 DocID026396 Rev 2