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STTH1210FP

STTH1210FP

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO220FP-2

  • 描述:

    DIODE GEN PURP 1KV 12A TO220FP

  • 数据手册
  • 价格&库存
STTH1210FP 数据手册
STTH1210 Ultrafast recovery - high voltage diode Main product characteristics IF(AV) 12 A VRRM 1000 V Tj 175° C VF (typ) 1.30 V trr (typ) 48 ns A A K TO-220AC STTH1210D Features and benefits ■ ■ ■ ■ ■ ■ Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated packages: – TO-220Ins Electrical insulation = 2500 VRMS Capacitance = 7 pF – TO-220FPAC Electrical insulation = 2500 VRMS Capacitance = 12 pF Description K A K TO-220FPAC STTH1210FP K A A NC K D2PAK STTH1210G TO-220Ins STTH1210DI Order codes The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. Part Number Marking STTH1210D STTH1210D STTH1210G STTH1210G STTH1210G-TR STTH1210G STTH1210FP STTH1210FP STTH1210DI STTH1210DI The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/11 www.st.com 11 Characteristics STTH1210 1 Characteristics Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified) Symbol VRRM Parameter Repetitive peak reverse voltage Value Unit 1000 V 2 IF(RMS) IF(AV) TO-220AC / D PAK / TO-220FPAC 30 TO-220AC Ins 20 A RMS forward current Average forward current, δ = 0.5 TO-220AC / D2PAK Tc = 125° C TO-220FPAC Tc = 40° C TO-220AC Ins Tc = 95° C 12 A IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz square 120 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 80 A Tstg Storage temperature range -65 to + 175 °C 175 °C Tj Table 2. Maximum operating junction temperature Thermal parameters Symbol Parameter Value 2PAK Rth(j-c) Table 3. Symbol IR(1) Junction to case TO-220AC / D 1.9 TO-220FPAC 5.4 TO-220AC Ins 3.1 VF Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Min. Typ Forward voltage drop Tj = 100° C Max. Unit 10 VR = VRRM µA 3 30 2.0 IF = 12 A Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.3 x IF(AV) + 0.033 IF2(RMS) 2/11 °C/W Static electrical characteristics Tj = 25° C (2) Unit 1.40 1.8 1.30 1.7 V STTH1210 Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Typ Max. IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C 67 90 IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C 48 65 Reverse recovery current IF = 12 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 15 20 A S Softness factor IF = 12 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 2 tfr Forward recovery time dIF/dt = 50 A/µs IF = 12 A VFR = 1.5 x VFmax, Tj = 25° C 400 ns Forward recovery voltage IF = 12 A, dIF/dt = 50 A/µs, Tj = 25° C trr Reverse recovery time IRM VFP Figure 1. Conduction losses versus average current Figure 2. P(W) 30 =0.5 =1 =0.2 25 =0.1 20 =0.05 15 10 T 5 IF(AV)(A) 0 0 1 2 Figure 3. 3 4 5 6 7 8 9 10 11 12 13 14 15 Relative variation of thermal impedance junction to case versus pulse duration IFM(A) 120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 Figure 4. Zth(j-c)/Rth(j-c) 0.8 Unit ns 5 V Forward voltage drop versus forward current Tj=150°C (Maximum values) Tj=150°C (Typical values) Tj=25°C (Maximum values) VFM(V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 Min. 1.0 Single pulse TO-220AC TO-220Ins D²PAK 0.9 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.0 1.E-03 Single pulse TO-220FPAB 0.1 tp(s) 1.E-02 1.E-01 1.E+00 0.0 1.E-03 tp(s) 1.E-02 1.E-01 1.E+00 1.E+01 3/11 Characteristics Figure 5. STTH1210 Peak reverse recovery current versus dIF/dt (typical values) Reverse recovery time versus dIF/dt (typical values) Figure 6. IRM(A) trr(ns) 35 500 VR=600V Tj=125°C 30 450 IF= 2 x IF(AV) VR=600V Tj=125°C IF= 2 x IF(AV) 400 IF= IF(AV) 25 350 300 20 IF= IF(AV ) 250 IF=0.5 x IF(AV) 15 200 150 10 100 5 IF=0.5 x IF(AV) 50 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 50 Figure 7. 100 150 200 250 300 350 400 450 500 Reverse recovery charges versus dIF/dt (typical values) 0 50 150 200 250 300 350 400 450 500 Softness factor versus dIF/dt (typical values) Figure 8. Qrr(µC) 100 S factor 3.5 3.0 VR=600V Tj=125°C 3.0 IF = 2 x IF(AV) VR=600V Tj=125°C IF= 2 x IF(AV) 2.5 2.5 IF= IF(AV) 2.0 2.0 1.5 IF=0.5 x IF(AV) 1.0 1.5 0.5 dIF/dt(A/µs) 0.0 dIF/dt(A/µs) 1.0 0 50 Figure 9. 100 150 200 250 300 350 400 450 500 Relative variations of dynamic parameters versus junction temperature 0 50 100 150 200 250 300 350 400 450 500 Figure 10. Transient peak forward voltage versus dIF/dt (typical values) VFP(V) 45 2.0 IF = IF(AV) VR=600V Reference: Tj=125°C Sfactor 1.8 1.6 IF = IF(AV) Tj=125°C 40 35 1.4 30 1.2 25 1.0 20 0.8 IRM 15 0.6 0.4 10 tRR QRR 0.2 5 Tj(°C) 0.0 4/11 dIF/dt(A/µs) 0 25 50 75 100 125 0 100 200 300 400 500 STTH1210 Characteristics Figure 11. Forward recovery time versus dIF/dt (typical values) Figure 12. Junction capacitance versus reverse voltage applied (typical values) tfr(ns) C(pF) 100 700 IF = IF(AV) VFR = 1.5 x V F max. Tj=125°C 600 F=1MHz Vosc=30mVRMS Tj=25°C 500 10 400 300 VR(V) dIF/dt(A/µs) 1 200 0 100 200 300 400 500 1 10 100 1000 Figure 13. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, ecu = 35 µm) Rth(j-a)(°C/W) 80 D²PAK 70 60 50 40 30 20 10 SCU (cm²) 0 0 5 10 15 20 25 30 35 40 5/11 Package information 2 STTH1210 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm (TO-220AC, TC-220Ins, TO-220FPAC) Maximum torque value: 0.7 Nm (TO-220AC, TO-220Ins, TO-220FPAC) Table 5. T0-220AC dimensions DIMENSIONS REF. A H2 ØI C L5 L7 L6 L2 F1 Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 D L9 L4 L2 16.40 typ. 0.645 typ. F M E G L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. I 6/11 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 STTH1210 Package information Table 6. T0-220Ins dimensions DIMENSIONS REF A Millimeters Inches Min. Max. Min. Max. 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 4.80 5.40 0.189 0.212 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 M 2.60 0.102 7/11 Package information Table 7. STTH1210 T0-220FPAC dimensions DIMENSIONS REF A Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 B H Dia L6 L2 L7 L3 L5 F1 D L4 L2 F G1 G 8/11 E 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 STTH1210 Package information Table 8. D2PAK dimensions DIMENSIONS REF. A E C2 L2 D Millimeters Inches Min. Max Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 L L3 A1 B2 R C B G A2 2mm min. FLAT ZONE V2 R V2 0.40 typ. 0° 0.016 typ. 8° 0° 8° Figure 14. D2PAK footprint (dimensions in mm) 16.90 10.30 5.08 1.30 8.90 3.70 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 9/11 Ordering information 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH1210D STTH1210D TO-220AC 1.86 g 50 Tube STTH1210DI STTH1210DI TO-220Ins 1.86 g 50 Tube STTH1210FP STTH1210FP TO-220FPAC STTH1210G STTH1210G-TR 4 10/11 STTH1210 2.2 g 50 Tube STTH1210G D2 1.48 g 50 Tube STTH1210G D2 1.48 g 1000 Tape & reel PAK PAK Revision history Date Revision 02-Mar-2006 1 Description of Changes First issue. STTH1210 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11
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