BAQ333-TR3

BAQ333, BAQ334, BAQ335 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Saving space • Hermetic sealed parts • Fits onto SOD-323/SOT-23 footprints • Electrical data identical with the devices BAQ33 to BAQ35, BAQ133 to BAQ135 • Very low reverse current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started APPLICATIONS Models • Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers Available MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes / options: TR3/10K per 13" reel (8 mm tape), 10K/box TR/2.5K per 7" reel (8 mm tape), 12.5K/box PARTS TABLE PART BAQ333 BAQ334 BAQ335 TYPE DIFFERENTIATION VRRM = 40 V VRRM = 70 V VRRM = 140 V ORDERING CODE BAQ333-TR3 or BAQ333-TR BAQ334-TR3 or BAQ334-TR BAQ335-TR3 or BAQ335-TR CIRCUIT CONFIGURATION Single Single Single REMARKS Tape and reel Tape and reel Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward continuous current PART BAQ333 BAQ334 BAQ335 BAQ333 BAQ334 BAQ335 tp = 1 μs SYMBOL VRRM VRRM VRRM VR VR VR IFSM IF VALUE 40 70 140 30 60 125 2 200 UNIT V V V V V V A mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature Storage temperature range TEST CONDITION Mounted on epoxy-glass hard tissue, fig. 4 35 μm copper clad, 0.9 mm2 copper area per electrode SYMBOL VALUE UNIT RthJA 500 K/W Tj Tstg 175 -65 to +175 °C °C Rev. 2.2, 11-Jul-17 Document Number: 85538 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAQ333, BAQ334, BAQ335 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage PART VF E ≤ 300 lx, rated VR IR E ≤ 300 lx, rated VR, Tj = 125 °C Reverse current MIN. TYP. MAX. 1 V 3 nA 0.5 μA BAQ333 IR 0.5 1 nA E ≤ 300 lx, VR = 30 V BAQ334 IR 0.5 1 nA E ≤ 300 lx, VR = 60 V BAQ335 IR 0.5 1 nA BAQ333 V(BR) 40 V BAQ334 V(BR) 70 V BAQ335 V(BR) 140 Diode capacitance VR = 0 V, f = 1 MHz IR UNIT 1 E ≤ 300 lx, VR = 15 V IR = 5 μA, tp/T = 0.01, tp = 0.3 ms Breakdown voltage SYMBOL IF = 100 mA V CD 3 pF TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 0.71 1.3 1.27 1000 Scattering Limit 100 0.355 10 10 9.9 0.152 25 I R - Reverse Current (nA) V R = VRRM 1 2.5 0 40 80 120 160 200 95 10329 Tj - Junction Temperature (°C) 94 9079 Fig. 1 - Reverse Current vs. Junction Temperature 24 Fig. 3 - Board for RthJA Definition (in mm) I F - Forward Current (mA) 1000 Tj = 25 °C 100 Scattering Limit 10 1 0.1 0 94 9078 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage Rev. 2.2, 11-Jul-17 Document Number: 85538 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAQ333, BAQ334, BAQ335 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): MicroMELF 0.6 (0.024) * 1.1 (0.043) 1.2 (0.047) < 1. 3 surface plan gl 1 (0.039) 5 ( as 0.0 s 53 ) surface plan Cathode indification 0.25 (0.010) 0.15 (0.006) > R2.5 (0.098) glass 2 (0.079) 1.8 (0.071) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: Wave soldering 2.4 (0.094) 2.8 (0.110) 0.8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.4 (0.055) 1.2 (0.047) 0.8 (0.031) Reflow soldering 0.8 (0.031) 1 (0.039) Created - Date: 26.July.1996 Rev. 13 - Date: 07.June.2006 Document no.:6.560-5007.01-4 96 12072 Rev. 2.2, 11-Jul-17 Document Number: 85538 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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