BYW33-TAP

BYW32, BYW33, BYW34, BYW35, BYW36 www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS 949539 • Fast rectification an switching diode for example for TV-line output circuits and switch mode power supply     MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end  Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS BYW36 BYW36-TR 5000 per 10" tape and reel MINIMUM ORDER QUANTITY 25 000 BYW36 BYW36-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYW32 VR = 200 V; IF(AV) = 2 A SOD-57 BYW33 VR = 300 V; IF(AV) = 2 A SOD-57 BYW34 VR = 400 V; IF(AV) = 2 A SOD-57 BYW35 VR = 500 V; IF(AV) = 2 A SOD-57 BYW36 VR = 600 V; IF(AV) = 2 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current TEST CONDITION PART SYMBOL VALUE UNIT BYW32 VR = VRRM 200 V BYW33 VR = VRRM 300 V BYW34 VR = VRRM 400 V BYW35 VR = VRRM 500 V BYW36 VR = VRRM 600 V tp = 10 ms, half sine wave IFSM 50 A IFRM 12 A  = 180° IF(AV) 2 A I(BR)R = 0.4 A ER 10 mJ Tj = Tstg - 55 to + 175 °C See electrical characteristics Repetitive peak forward current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range Rev. 1.8, 11-Sep-12 Document Number: 86048 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYW32, BYW33, BYW34, BYW35, BYW36 www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 1 A VF - 0.95 1.1 V VR = VRRM IR - 1 5 μA VR = VRRM, Tj = 150 °C IR - 60 150 μA IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 200 ns Forward voltage Reverse current Reverse recovery time PART UNIT TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 2.5 IFAV - Average Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) 120 100 80 60 l l 40 20 TL = constant VR = VRRM half sinewave 2.0 1.5 1.0 5 10 15 20 25 0 0 30 l - Lead Length (mm) 949552 RthJA = 100 K/W PCB: d = 25 mm 0.5 0 0 RthJA = 45 K/W I = 10 mm Fig. 1 - Max. Thermal Resistance vs. Lead Length 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) 16346 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 10 IR - Reverse Current (A) IF - Forward Current (A) VR = VRRM Tj = 175 °C 1 Tj = 25 °C 0.1 0.01 100 10 1 25 0.001 0 16345 0.5 1.0 1.5 2.0 2.5 3.0 VF - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.8, 11-Sep-12 16347 50 75 100 125 150 175 Tj - Junction Temperature (°C) Fig. 4 - Reverse Current vs. Junction Temperature (°C) Document Number: 86048 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYW32, BYW33, BYW34, BYW35, BYW36 Vishay Semiconductors 300 40 f = 1 MHz VR = VRRM CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) www.vishay.com 250 200 PR-Limit at 100 % VR 150 100 PR-Limit at 80 % VR 50 35 30 25 20 15 10 5 0 25 50 75 100 125 150 0 0.1 175 Tj - Junction Temperature (°C) 16348 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Zthp - Thermal Resist. for Pulse Cond. (K/W) 1 10 100 VR - Reverse Voltage (V) 16349 Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 VRRM = 600 V RthJA = 100 K/W 100 Tamb = 25 °C tp/T = 0.5 45 °C 0.2 0.1 50 °C 100 °C 10 0.02 70 °C 0.01 1 10-5 10-4 949561 Single pulse 10-3 10-2 10-1 100 101 tp - Pulse Length (s) 100 101 IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.8, 11-Sep-12 Document Number: 86048 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000